CH536014A - Datenspeicher, insbesondere monolithisch integrierter Halbleiter-Datenspeicher - Google Patents
Datenspeicher, insbesondere monolithisch integrierter Halbleiter-DatenspeicherInfo
- Publication number
- CH536014A CH536014A CH1344971A CH1344971A CH536014A CH 536014 A CH536014 A CH 536014A CH 1344971 A CH1344971 A CH 1344971A CH 1344971 A CH1344971 A CH 1344971A CH 536014 A CH536014 A CH 536014A
- Authority
- CH
- Switzerland
- Prior art keywords
- data memories
- integrated semiconductor
- monolithically integrated
- particular monolithically
- memories
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7443270A | 1970-09-22 | 1970-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH536014A true CH536014A (de) | 1973-04-15 |
Family
ID=22119533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1344971A CH536014A (de) | 1970-09-22 | 1971-09-14 | Datenspeicher, insbesondere monolithisch integrierter Halbleiter-Datenspeicher |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3688280A (de) |
| JP (1) | JPS521829B1 (de) |
| BE (1) | BE771198A (de) |
| CA (1) | CA956034A (de) |
| CH (1) | CH536014A (de) |
| DE (1) | DE2146905C3 (de) |
| ES (1) | ES395249A1 (de) |
| FR (1) | FR2107851B1 (de) |
| GB (1) | GB1334307A (de) |
| NL (1) | NL178368C (de) |
| SE (1) | SE379255B (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3750116A (en) * | 1972-06-30 | 1973-07-31 | Ibm | Half good chip with low power dissipation |
| US3855577A (en) * | 1973-06-11 | 1974-12-17 | Texas Instruments Inc | Power saving circuit for calculator system |
| US3969708A (en) * | 1975-06-30 | 1976-07-13 | International Business Machines Corporation | Static four device memory cell |
| DE2713648A1 (de) * | 1976-03-26 | 1977-10-06 | Tokyo Shibaura Electric Co | Stromzufuhr-steuervorrichtung fuer speichervorrichtungen |
| US4095265A (en) * | 1976-06-07 | 1978-06-13 | International Business Machines Corporation | Memory control structure for a pipelined mini-processor system |
| US4174541A (en) * | 1976-12-01 | 1979-11-13 | Raytheon Company | Bipolar monolithic integrated circuit memory with standby power enable |
| FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
| US4422162A (en) * | 1980-10-01 | 1983-12-20 | Motorola, Inc. | Non-dissipative memory system |
| US4413191A (en) * | 1981-05-05 | 1983-11-01 | International Business Machines Corporation | Array word line driver system |
| US4445205A (en) * | 1981-12-28 | 1984-04-24 | National Semiconductor Corporation | Semiconductor memory core programming circuit |
| JPS59124092A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | メモリ装置 |
| JPH03231320A (ja) * | 1990-02-06 | 1991-10-15 | Mitsubishi Electric Corp | マイクロコンピュータシステム |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3292008A (en) * | 1963-12-03 | 1966-12-13 | Rca Corp | Switching circuit having low standby power dissipation |
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| DE1524873B2 (de) * | 1967-10-05 | 1970-12-23 | Ibm Deutschland | Monolithische integrierte Speicherzelle mit kleiner Ruheleistung |
| US3618046A (en) * | 1970-03-09 | 1971-11-02 | Cogar Corp | Bilevel semiconductor memory circuit with high-speed word driver |
-
1970
- 1970-09-22 US US74432A patent/US3688280A/en not_active Expired - Lifetime
-
1971
- 1971-07-06 FR FR7126014A patent/FR2107851B1/fr not_active Expired
- 1971-08-11 BE BE771198A patent/BE771198A/xx unknown
- 1971-08-18 GB GB3866171A patent/GB1334307A/en not_active Expired
- 1971-09-01 NL NLAANVRAGE7111999,A patent/NL178368C/xx not_active IP Right Cessation
- 1971-09-10 CA CA122,499A patent/CA956034A/en not_active Expired
- 1971-09-14 CH CH1344971A patent/CH536014A/de not_active IP Right Cessation
- 1971-09-20 SE SE7111889A patent/SE379255B/xx unknown
- 1971-09-20 ES ES395249A patent/ES395249A1/es not_active Expired
- 1971-09-20 DE DE2146905A patent/DE2146905C3/de not_active Expired
- 1971-09-22 JP JP46073503A patent/JPS521829B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3688280A (en) | 1972-08-29 |
| BE771198A (fr) | 1971-12-16 |
| CA956034A (en) | 1974-10-08 |
| JPS521829B1 (de) | 1977-01-18 |
| AU3279071A (en) | 1973-03-01 |
| FR2107851B1 (de) | 1974-05-31 |
| NL7111999A (de) | 1972-03-24 |
| NL178368B (nl) | 1985-10-01 |
| FR2107851A1 (de) | 1972-05-12 |
| ES395249A1 (es) | 1973-11-16 |
| SE379255B (de) | 1975-09-29 |
| DE2146905B2 (de) | 1974-06-27 |
| GB1334307A (en) | 1973-10-17 |
| DE2146905C3 (de) | 1975-02-13 |
| DE2146905A1 (de) | 1972-04-27 |
| NL178368C (nl) | 1986-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |