NL7111999A - - Google Patents

Info

Publication number
NL7111999A
NL7111999A NL7111999A NL7111999A NL7111999A NL 7111999 A NL7111999 A NL 7111999A NL 7111999 A NL7111999 A NL 7111999A NL 7111999 A NL7111999 A NL 7111999A NL 7111999 A NL7111999 A NL 7111999A
Authority
NL
Netherlands
Application number
NL7111999A
Other versions
NL178368B (nl
NL178368C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7111999A publication Critical patent/NL7111999A/xx
Publication of NL178368B publication Critical patent/NL178368B/xx
Application granted granted Critical
Publication of NL178368C publication Critical patent/NL178368C/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415Address circuits
NLAANVRAGE7111999,A 1970-09-22 1971-09-01 Halfgeleidergeheugen. NL178368C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7443270A 1970-09-22 1970-09-22

Publications (3)

Publication Number Publication Date
NL7111999A true NL7111999A (de) 1972-03-24
NL178368B NL178368B (nl) 1985-10-01
NL178368C NL178368C (nl) 1986-03-03

Family

ID=22119533

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7111999,A NL178368C (nl) 1970-09-22 1971-09-01 Halfgeleidergeheugen.

Country Status (11)

Country Link
US (1) US3688280A (de)
JP (1) JPS521829B1 (de)
BE (1) BE771198A (de)
CA (1) CA956034A (de)
CH (1) CH536014A (de)
DE (1) DE2146905C3 (de)
ES (1) ES395249A1 (de)
FR (1) FR2107851B1 (de)
GB (1) GB1334307A (de)
NL (1) NL178368C (de)
SE (1) SE379255B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3750116A (en) * 1972-06-30 1973-07-31 Ibm Half good chip with low power dissipation
US3855577A (en) * 1973-06-11 1974-12-17 Texas Instruments Inc Power saving circuit for calculator system
US3969708A (en) * 1975-06-30 1976-07-13 International Business Machines Corporation Static four device memory cell
US4151611A (en) * 1976-03-26 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Power supply control system for memory systems
US4095265A (en) * 1976-06-07 1978-06-13 International Business Machines Corporation Memory control structure for a pipelined mini-processor system
US4174541A (en) * 1976-12-01 1979-11-13 Raytheon Company Bipolar monolithic integrated circuit memory with standby power enable
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
US4422162A (en) * 1980-10-01 1983-12-20 Motorola, Inc. Non-dissipative memory system
US4413191A (en) * 1981-05-05 1983-11-01 International Business Machines Corporation Array word line driver system
US4445205A (en) * 1981-12-28 1984-04-24 National Semiconductor Corporation Semiconductor memory core programming circuit
JPS59124092A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd メモリ装置
JPH03231320A (ja) * 1990-02-06 1991-10-15 Mitsubishi Electric Corp マイクロコンピュータシステム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292008A (en) * 1963-12-03 1966-12-13 Rca Corp Switching circuit having low standby power dissipation
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung
US3618046A (en) * 1970-03-09 1971-11-02 Cogar Corp Bilevel semiconductor memory circuit with high-speed word driver

Also Published As

Publication number Publication date
DE2146905B2 (de) 1974-06-27
BE771198A (fr) 1971-12-16
AU3279071A (en) 1973-03-01
NL178368B (nl) 1985-10-01
DE2146905A1 (de) 1972-04-27
FR2107851B1 (de) 1974-05-31
FR2107851A1 (de) 1972-05-12
CH536014A (de) 1973-04-15
CA956034A (en) 1974-10-08
US3688280A (en) 1972-08-29
ES395249A1 (es) 1973-11-16
NL178368C (nl) 1986-03-03
GB1334307A (en) 1973-10-17
SE379255B (de) 1975-09-29
JPS521829B1 (de) 1977-01-18
DE2146905C3 (de) 1975-02-13

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent