NL153030B - Licht-uitzendende halfgeleiderdiode. - Google Patents

Licht-uitzendende halfgeleiderdiode.

Info

Publication number
NL153030B
NL153030B NL707013041A NL7013041A NL153030B NL 153030 B NL153030 B NL 153030B NL 707013041 A NL707013041 A NL 707013041A NL 7013041 A NL7013041 A NL 7013041A NL 153030 B NL153030 B NL 153030B
Authority
NL
Netherlands
Prior art keywords
emissioning
light
semiconductor diode
diode
semiconductor
Prior art date
Application number
NL707013041A
Other languages
English (en)
Other versions
NL7013041A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7000269A external-priority patent/JPS556312B1/ja
Priority claimed from JP7274269A external-priority patent/JPS5514555B1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7013041A publication Critical patent/NL7013041A/xx
Publication of NL153030B publication Critical patent/NL153030B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
NL707013041A 1969-09-05 1970-09-03 Licht-uitzendende halfgeleiderdiode. NL153030B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7000269A JPS556312B1 (nl) 1969-09-05 1969-09-05
JP7274269A JPS5514555B1 (nl) 1969-09-16 1969-09-16

Publications (2)

Publication Number Publication Date
NL7013041A NL7013041A (nl) 1971-03-09
NL153030B true NL153030B (nl) 1977-04-15

Family

ID=26411176

Family Applications (1)

Application Number Title Priority Date Filing Date
NL707013041A NL153030B (nl) 1969-09-05 1970-09-03 Licht-uitzendende halfgeleiderdiode.

Country Status (2)

Country Link
US (1) US3634872A (nl)
NL (1) NL153030B (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1313252A (en) * 1970-07-22 1973-04-11 Hitachi Ltd Semiconductor device and method for making the same
US3725749A (en) * 1971-06-30 1973-04-03 Monsanto Co GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES
US3873382A (en) * 1971-06-30 1975-03-25 Monsanto Co Process for the preparation of semiconductor materials and devices
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
USRE29648E (en) * 1972-12-08 1978-05-30 Monsanto Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities
US4001056A (en) * 1972-12-08 1977-01-04 Monsanto Company Epitaxial deposition of iii-v compounds containing isoelectronic impurities
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3975555A (en) * 1975-02-12 1976-08-17 Rca Corporation Method of making electrical contacts having a low optical absorption
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
FR2371780A1 (fr) * 1976-11-22 1978-06-16 Mitsubishi Monsanto Chem Element electroluminescent et son procede de fabrication
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
US4477824A (en) * 1982-03-04 1984-10-16 At&T Bell Laboratories Light emitting device for optical switching

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
NL290588A (nl) * 1963-03-22
GB1119525A (en) * 1964-08-19 1968-07-10 Mullard Ltd Improvements in opto-electronic semiconductor devices
US3398310A (en) * 1965-03-11 1968-08-20 Hewlett Packard Co Indirect energy band gap topology injection electroluminescence source
US3333135A (en) * 1965-06-25 1967-07-25 Gen Electric Semiconductive display device
FR1489613A (nl) * 1965-08-19 1967-11-13
US3419742A (en) * 1965-11-24 1968-12-31 Monsanto Co Injection-luminescent gaas diodes having a graded p-n junction
US3501679A (en) * 1967-02-27 1970-03-17 Nippon Electric Co P-n junction type light-emitting semiconductor
US3458782A (en) * 1967-10-18 1969-07-29 Bell Telephone Labor Inc Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Also Published As

Publication number Publication date
NL7013041A (nl) 1971-03-09
US3634872A (en) 1972-01-11

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: HITACHI