AT317302B - Metall-Halbleiterdiode - Google Patents
Metall-HalbleiterdiodeInfo
- Publication number
- AT317302B AT317302B AT1122670A AT1122670A AT317302B AT 317302 B AT317302 B AT 317302B AT 1122670 A AT1122670 A AT 1122670A AT 1122670 A AT1122670 A AT 1122670A AT 317302 B AT317302 B AT 317302B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor diode
- metal semiconductor
- metal
- diode
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691962814 DE1962814A1 (de) | 1969-12-15 | 1969-12-15 | Metall-Halbleiterdiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT317302B true AT317302B (de) | 1974-08-26 |
Family
ID=5753916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT1122670A AT317302B (de) | 1969-12-15 | 1970-12-14 | Metall-Halbleiterdiode |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS509674B1 (de) |
| AT (1) | AT317302B (de) |
| CH (1) | CH517382A (de) |
| DE (1) | DE1962814A1 (de) |
| FR (1) | FR2070856B1 (de) |
| GB (1) | GB1271639A (de) |
| NL (1) | NL7018216A (de) |
| SE (1) | SE353815B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869361A3 (de) * | 1997-04-02 | 1999-12-29 | Tohoku Electronic Industrial Co., Ltd. | Verfahren und Vorrichtung zur Messung der Antioxydationsfähigkeit einer flüssigen Probe |
| DE50009436D1 (de) | 1999-09-22 | 2005-03-10 | Siced Elect Dev Gmbh & Co Kg | SiC-Halbleitervorrichtung mit einem Schottky-Kontakt und Verfahren zu deren Herstellung |
| DE10344749B3 (de) * | 2003-09-25 | 2005-01-20 | Infineon Technologies Ag | Schottky-Kontakt in einem elektronischen Bauelement und Verfahren zur Herstellung |
| CN114678272A (zh) * | 2022-02-28 | 2022-06-28 | 中国科学院上海微系统与信息技术研究所 | 一种NiGe/n-Ge肖特基二极管的制备方法 |
-
1969
- 1969-12-15 DE DE19691962814 patent/DE1962814A1/de active Pending
-
1970
- 1970-12-11 SE SE16827/70A patent/SE353815B/xx unknown
- 1970-12-14 GB GB59251/70A patent/GB1271639A/en not_active Expired
- 1970-12-14 NL NL7018216A patent/NL7018216A/xx unknown
- 1970-12-14 FR FR707044940A patent/FR2070856B1/fr not_active Expired
- 1970-12-14 CH CH1850670A patent/CH517382A/de not_active IP Right Cessation
- 1970-12-14 AT AT1122670A patent/AT317302B/de not_active IP Right Cessation
- 1970-12-15 JP JP45111386A patent/JPS509674B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH517382A (de) | 1971-12-31 |
| JPS509674B1 (de) | 1975-04-15 |
| SE353815B (de) | 1973-02-12 |
| NL7018216A (de) | 1971-06-17 |
| GB1271639A (en) | 1972-04-19 |
| FR2070856B1 (de) | 1974-07-12 |
| DE1962814A1 (de) | 1971-06-16 |
| FR2070856A1 (de) | 1971-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |