AT317302B - Metall-Halbleiterdiode - Google Patents

Metall-Halbleiterdiode

Info

Publication number
AT317302B
AT317302B AT1122670A AT1122670A AT317302B AT 317302 B AT317302 B AT 317302B AT 1122670 A AT1122670 A AT 1122670A AT 1122670 A AT1122670 A AT 1122670A AT 317302 B AT317302 B AT 317302B
Authority
AT
Austria
Prior art keywords
semiconductor diode
metal semiconductor
metal
diode
semiconductor
Prior art date
Application number
AT1122670A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT317302B publication Critical patent/AT317302B/de

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/40—
AT1122670A 1969-12-15 1970-12-14 Metall-Halbleiterdiode AT317302B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691962814 DE1962814A1 (de) 1969-12-15 1969-12-15 Metall-Halbleiterdiode

Publications (1)

Publication Number Publication Date
AT317302B true AT317302B (de) 1974-08-26

Family

ID=5753916

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1122670A AT317302B (de) 1969-12-15 1970-12-14 Metall-Halbleiterdiode

Country Status (8)

Country Link
JP (1) JPS509674B1 (de)
AT (1) AT317302B (de)
CH (1) CH517382A (de)
DE (1) DE1962814A1 (de)
FR (1) FR2070856B1 (de)
GB (1) GB1271639A (de)
NL (1) NL7018216A (de)
SE (1) SE353815B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869361A3 (de) * 1997-04-02 1999-12-29 Tohoku Electronic Industrial Co., Ltd. Verfahren und Vorrichtung zur Messung der Antioxydationsfähigkeit einer flüssigen Probe
ATE288623T1 (de) 1999-09-22 2005-02-15 Siced Elect Dev Gmbh & Co Kg Sic-halbleitervorrichtung mit einem schottky- kontakt und verfahren zu deren herstellung
DE10344749B3 (de) * 2003-09-25 2005-01-20 Infineon Technologies Ag Schottky-Kontakt in einem elektronischen Bauelement und Verfahren zur Herstellung
CN114678272A (zh) * 2022-02-28 2022-06-28 中国科学院上海微系统与信息技术研究所 一种NiGe/n-Ge肖特基二极管的制备方法

Also Published As

Publication number Publication date
FR2070856B1 (de) 1974-07-12
CH517382A (de) 1971-12-31
DE1962814A1 (de) 1971-06-16
JPS509674B1 (de) 1975-04-15
GB1271639A (en) 1972-04-19
FR2070856A1 (de) 1971-09-17
SE353815B (de) 1973-02-12
NL7018216A (de) 1971-06-17

Similar Documents

Publication Publication Date Title
AT318003B (de) Halbleiterbauelement
CH537650A (de) Halbleiterlaser
CH507591A (de) Halbleitervorrichtung
CH511511A (de) Halbleiter-Anordnung
CH506883A (de) Halbleiterbauelement
CH504099A (de) Halbleiterbauelement
CH508280A (de) Halbleiteranordnung
CH504108A (de) Halbleiteranordnung
CH507587A (de) Halbleiter-Gleichrichter-Anordnung
NL170786C (nl) Halfgeleider-laserinrichting.
CH492302A (de) Halbleiterbauelement
CH511512A (de) Halbleitervorrichtung
NL153030B (nl) Licht-uitzendende halfgeleiderdiode.
CH508983A (de) Halbleiter-Bauelement
CH515616A (de) Halbleiterdiode
CH508279A (de) Halbleiterbauelement
BE751470A (fr) Laser a semiconducteur
CH513515A (de) Halbleiteranordnung
CH499204A (de) Halbleitervorrichtung
AT317302B (de) Metall-Halbleiterdiode
DE1949174B2 (de) Halbleiterbauelement
AT316652B (de) Stabilisiertes Halbleiterbauelement
CH504102A (de) Halbleiteranordnung
AT301689B (de) Halbleiterbauelement
DE1903082B2 (de) Halbleiterbauelement

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee