GB1077851A - Transistors - Google Patents

Transistors

Info

Publication number
GB1077851A
GB1077851A GB2036762A GB2036762A GB1077851A GB 1077851 A GB1077851 A GB 1077851A GB 2036762 A GB2036762 A GB 2036762A GB 2036762 A GB2036762 A GB 2036762A GB 1077851 A GB1077851 A GB 1077851A
Authority
GB
United Kingdom
Prior art keywords
channel
region
source
metal
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2036762A
Inventor
Adi Framji Khambatta
Geoffrey Joseph Shrank
Derek Ross Tibbetts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultra Electronics Ltd
Original Assignee
Ultra Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultra Electronics Ltd filed Critical Ultra Electronics Ltd
Priority to GB2036762A priority Critical patent/GB1077851A/en
Publication of GB1077851A publication Critical patent/GB1077851A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1,077,851. Transistors. ULTRA ELECTRONICS Ltd. Feb. 28, 1964 [Nov. 28, 1962], No. 20367/62. Heading H1K. A constriction is formed in the channel of a field-effect transistor by modifying the characteristics of the semi-conductor body between a surface of the body lying in the 100 crystallographic plane and the 111 crystallographic planes lying within the body, so as to define a boundary of the channel in the constricted region. As shown, a groove separating the source and drain areas is formed by evaporating a metal (e.g. aluminium) on to the semiconductor surface, alloying the metal into the surface, and then removing the alloyed portion by etching. The groove may be rectangular in plan (Fig. 6), so that the drain surrounds the source. Alternatively, the alloyed region may be left in place, forming a rectifying junction with the channel region.
GB2036762A 1962-05-28 1962-05-28 Transistors Expired GB1077851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2036762A GB1077851A (en) 1962-05-28 1962-05-28 Transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2036762A GB1077851A (en) 1962-05-28 1962-05-28 Transistors

Publications (1)

Publication Number Publication Date
GB1077851A true GB1077851A (en) 1967-08-02

Family

ID=10144765

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2036762A Expired GB1077851A (en) 1962-05-28 1962-05-28 Transistors

Country Status (1)

Country Link
GB (1) GB1077851A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087251A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Process for manufacturing a buried gate field effect transistor
GB2125621A (en) * 1982-08-20 1984-03-07 Telefunken Electronic Gmbh Method for the manufacture of a field effect transistor
US4903109A (en) * 1970-07-10 1990-02-20 U.S. Philips Corp. Semiconductor devices having local oxide isolation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903109A (en) * 1970-07-10 1990-02-20 U.S. Philips Corp. Semiconductor devices having local oxide isolation
EP0087251A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Process for manufacturing a buried gate field effect transistor
EP0087251A3 (en) * 1982-02-22 1986-04-16 Kabushiki Kaisha Toshiba Process for manufacturing a buried gate field effect transistor
GB2125621A (en) * 1982-08-20 1984-03-07 Telefunken Electronic Gmbh Method for the manufacture of a field effect transistor

Similar Documents

Publication Publication Date Title
GB954947A (en) Surface-potential controlled semiconductor device
GB1328145A (en) Method of producing integrated cirucits
GB1525415A (en) Mos transistor
GB1191890A (en) Semiconductor Controlled Rectifier Devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1060208A (en) Avalanche transistor
GB1188799A (en) Insulated Gate Field Effect Devices.
GB1077851A (en) Transistors
GB1037199A (en) Improvements in or relating to transistor manufacture
GB1074420A (en) Improvements relating to a method for fabricating insulated-gate field effect transistors
GB896717A (en) Semiconductor diode
IE33394B1 (en) Improvements in semiconductor devices
GB1125650A (en) Insulating layers and devices incorporating such layers
GB1184797A (en) A Method of Making a Semiconductor Device
GB1168219A (en) Bistable Semiconductor Integrated Device
GB1209740A (en) Transistors
GB1073560A (en) Improvements in semiconductor devices
GB1098760A (en) Method of making semiconductor device
JPS4819113B1 (en)
GB1335037A (en) Field effect transistor
GB1469005A (en) Standard telephones cables ltd semiconductor device manufacture
GB1208575A (en) Methods of manufacturing semiconductor devices
GB1177382A (en) Method of Making Ohmic Contact to a Semiconductor Body
GB1399526A (en) Semiconductor device
GB1156895A (en) Improvements in and relating to the Manufacture of Semiconductor Devices