NL166157C - Capaciteitsdiode voor een geintegreerde halfgeleider- schakeling. - Google Patents

Capaciteitsdiode voor een geintegreerde halfgeleider- schakeling.

Info

Publication number
NL166157C
NL166157C NL6909793.A NL6909793A NL166157C NL 166157 C NL166157 C NL 166157C NL 6909793 A NL6909793 A NL 6909793A NL 166157 C NL166157 C NL 166157C
Authority
NL
Netherlands
Prior art keywords
semiconductor circuit
integrated semiconductor
capacity diode
diode
capacity
Prior art date
Application number
NL6909793.A
Other languages
English (en)
Other versions
NL6909793A (nl
NL166157B (nl
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of NL6909793A publication Critical patent/NL6909793A/xx
Publication of NL166157B publication Critical patent/NL166157B/nl
Application granted granted Critical
Publication of NL166157C publication Critical patent/NL166157C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/901—Capacitive junction
NL6909793.A 1968-06-26 1969-06-26 Capaciteitsdiode voor een geintegreerde halfgeleider- schakeling. NL166157C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1764556A DE1764556C3 (de) 1968-06-26 1968-06-26 Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente

Publications (3)

Publication Number Publication Date
NL6909793A NL6909793A (nl) 1969-12-30
NL166157B NL166157B (nl) 1981-01-15
NL166157C true NL166157C (nl) 1981-06-15

Family

ID=5698035

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6909793.A NL166157C (nl) 1968-06-26 1969-06-26 Capaciteitsdiode voor een geintegreerde halfgeleider- schakeling.

Country Status (5)

Country Link
US (1) US3581164A (nl)
BE (1) BE735089A (nl)
DE (1) DE1764556C3 (nl)
FR (1) FR2014235A1 (nl)
NL (1) NL166157C (nl)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS551704B2 (nl) * 1972-10-04 1980-01-16
US4003076A (en) * 1973-05-21 1977-01-11 Signetics Corporation Single bipolar transistor memory cell and method
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same
JPS5410845Y1 (nl) * 1975-10-23 1979-05-17
US4177095A (en) * 1977-02-25 1979-12-04 National Semiconductor Corporation Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps
DE3174824D1 (en) * 1980-12-17 1986-07-17 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit
DE3326958C2 (de) * 1983-07-27 1986-07-10 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung zum Verstärken
US4631562A (en) * 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
DE3740302A1 (de) * 1987-11-27 1989-06-08 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
US8796809B2 (en) * 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388012A (en) * 1964-09-15 1968-06-11 Bendix Corp Method of forming a semiconductor device by diffusing and alloying
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3427513A (en) * 1966-03-07 1969-02-11 Fairchild Camera Instr Co Lateral transistor with improved injection efficiency
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor

Also Published As

Publication number Publication date
NL6909793A (nl) 1969-12-30
BE735089A (nl) 1969-12-29
DE1764556C3 (de) 1979-01-04
US3581164A (en) 1971-05-25
FR2014235A1 (nl) 1970-04-17
DE1764556B2 (de) 1973-06-07
DE1764556A1 (de) 1970-09-10
NL166157B (nl) 1981-01-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee