CH539341A - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
CH539341A
CH539341A CH1788069A CH1788069A CH539341A CH 539341 A CH539341 A CH 539341A CH 1788069 A CH1788069 A CH 1788069A CH 1788069 A CH1788069 A CH 1788069A CH 539341 A CH539341 A CH 539341A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
CH1788069A
Other languages
English (en)
Inventor
Schink Norbert Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681812556 external-priority patent/DE1812556C/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH539341A publication Critical patent/CH539341A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Weting (AREA)
CH1788069A 1968-12-04 1969-12-01 Halbleiterbauelement CH539341A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19681812556 DE1812556C (de) 1968-12-04 Halbleiterbauelement mit einem Überzug aus bleihaltigem Isolierstoff am pnÜbergang
DE19681816841 DE1816841A1 (de) 1968-12-04 1968-12-24 Verfahren zum Stabilisieren der Kennlinie eines Halbleiterbauelements

Publications (1)

Publication Number Publication Date
CH539341A true CH539341A (de) 1973-07-15

Family

ID=25756537

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1788069A CH539341A (de) 1968-12-04 1969-12-01 Halbleiterbauelement

Country Status (7)

Country Link
US (1) US3751306A (de)
CH (1) CH539341A (de)
DE (1) DE1816841A1 (de)
FR (1) FR2025208B1 (de)
GB (2) GB1298800A (de)
NL (1) NL6917325A (de)
SE (1) SE363425B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369280A (en) * 1981-08-04 1983-01-18 General Electric Company Polybutylene terephthalate molding compositions and articles molded therefrom
WO1999012201A1 (de) * 1997-09-03 1999-03-11 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Feuchtigkeitsschutz für boratglashalbleiterpassivierungsschichten

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133278C (de) * 1960-04-30
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
FR1324553A (fr) * 1961-05-11 1963-04-19 Motorola Inc Procédé de protection des surfaces des matières semi-conductrices utilisées dansles dispositifs électroniques à conduction en phase solide, tels que les transistors et les diodes
NL131157C (de) * 1963-08-01
FR1443304A (fr) * 1965-05-11 1966-06-24 Comp Generale Electricite Procédé d'obtention d'un dépôt vitreux
US3447975A (en) * 1965-09-13 1969-06-03 Westinghouse Electric Corp Bilayer protective coating for exposed p-n junction surfaces
US3460003A (en) * 1967-01-30 1969-08-05 Corning Glass Works Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2
US3506502A (en) * 1967-06-05 1970-04-14 Sony Corp Method of making a glass passivated mesa semiconductor device

Also Published As

Publication number Publication date
FR2025208B1 (de) 1975-01-10
NL6917325A (de) 1970-06-08
DE1812556A1 (de) 1970-06-11
SE363425B (de) 1974-01-14
US3751306A (en) 1973-08-07
DE1816841A1 (de) 1970-07-02
FR2025208A1 (de) 1970-09-04
GB1294889A (de) 1972-11-01
DE1812556B2 (de) 1971-02-18
GB1298800A (en) 1972-12-06

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Legal Events

Date Code Title Description
PL Patent ceased