AT278907B - Halbleiterelement - Google Patents
HalbleiterelementInfo
- Publication number
- AT278907B AT278907B AT777368A AT777368A AT278907B AT 278907 B AT278907 B AT 278907B AT 777368 A AT777368 A AT 777368A AT 777368 A AT777368 A AT 777368A AT 278907 B AT278907 B AT 278907B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1055368A CH485324A (de) | 1968-07-15 | 1968-07-15 | Halbleiterelement |
Publications (1)
Publication Number | Publication Date |
---|---|
AT278907B true AT278907B (de) | 1970-02-25 |
Family
ID=4364431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT777368A AT278907B (de) | 1968-07-15 | 1968-08-08 | Halbleiterelement |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT278907B (de) |
CH (1) | CH485324A (de) |
DE (2) | DE6922591U (de) |
FR (1) | FR2012977A7 (de) |
GB (1) | GB1220315A (de) |
NL (1) | NL6812691A (de) |
SE (1) | SE354381B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60250670A (ja) * | 1984-05-25 | 1985-12-11 | Mitsubishi Electric Corp | 半導体装置 |
DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
-
1968
- 1968-07-15 CH CH1055368A patent/CH485324A/de not_active IP Right Cessation
- 1968-08-08 AT AT777368A patent/AT278907B/de not_active IP Right Cessation
- 1968-09-05 NL NL6812691A patent/NL6812691A/xx unknown
-
1969
- 1969-06-06 DE DE6922591U patent/DE6922591U/de not_active Expired
- 1969-06-06 DE DE19691928787 patent/DE1928787A1/de active Pending
- 1969-07-11 FR FR6923762A patent/FR2012977A7/fr not_active Expired
- 1969-07-14 SE SE09954/69A patent/SE354381B/xx unknown
- 1969-07-14 GB GB35239/69A patent/GB1220315A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH485324A (de) | 1970-01-31 |
FR2012977A7 (de) | 1970-03-27 |
SE354381B (de) | 1973-03-05 |
DE6922591U (de) | 1971-03-18 |
NL6812691A (de) | 1970-01-19 |
DE1928787A1 (de) | 1970-11-12 |
GB1220315A (en) | 1971-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |