GB1220315A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
GB1220315A
GB1220315A GB35239/69A GB3523969A GB1220315A GB 1220315 A GB1220315 A GB 1220315A GB 35239/69 A GB35239/69 A GB 35239/69A GB 3523969 A GB3523969 A GB 3523969A GB 1220315 A GB1220315 A GB 1220315A
Authority
GB
United Kingdom
Prior art keywords
groove
region
regions
junction
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35239/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, Brown Boveri und Cie AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of GB1220315A publication Critical patent/GB1220315A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
GB35239/69A 1968-07-15 1969-07-14 Semi-conductor device Expired GB1220315A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1055368A CH485324A (de) 1968-07-15 1968-07-15 Halbleiterelement

Publications (1)

Publication Number Publication Date
GB1220315A true GB1220315A (en) 1971-01-27

Family

ID=4364431

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35239/69A Expired GB1220315A (en) 1968-07-15 1969-07-14 Semi-conductor device

Country Status (7)

Country Link
AT (1) AT278907B (de)
CH (1) CH485324A (de)
DE (2) DE1928787A1 (de)
FR (1) FR2012977A7 (de)
GB (1) GB1220315A (de)
NL (1) NL6812691A (de)
SE (1) SE354381B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe

Also Published As

Publication number Publication date
FR2012977A7 (de) 1970-03-27
DE6922591U (de) 1971-03-18
DE1928787A1 (de) 1970-11-12
NL6812691A (de) 1970-01-19
CH485324A (de) 1970-01-31
AT278907B (de) 1970-02-25
SE354381B (de) 1973-03-05

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