CH477093A - Halbleiterelement - Google Patents

Halbleiterelement

Info

Publication number
CH477093A
CH477093A CH926667A CH926667A CH477093A CH 477093 A CH477093 A CH 477093A CH 926667 A CH926667 A CH 926667A CH 926667 A CH926667 A CH 926667A CH 477093 A CH477093 A CH 477093A
Authority
CH
Switzerland
Prior art keywords
semiconductor element
semiconductor
Prior art date
Application number
CH926667A
Other languages
English (en)
Inventor
Elmar Dipl Ing Mueller
Klaus Dipl Ing Weimann
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of CH477093A publication Critical patent/CH477093A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716Cathode or anode electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CH926667A 1966-07-02 1967-06-29 Halbleiterelement CH477093A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB0087825 1966-07-02

Publications (1)

Publication Number Publication Date
CH477093A true CH477093A (de) 1969-08-15

Family

ID=6983965

Family Applications (1)

Application Number Title Priority Date Filing Date
CH926667A CH477093A (de) 1966-07-02 1967-06-29 Halbleiterelement

Country Status (7)

Country Link
US (1) US3531697A (de)
CH (1) CH477093A (de)
DE (1) DE1539694B2 (de)
FR (1) FR1530036A (de)
GB (1) GB1166154A (de)
NL (1) NL6709120A (de)
SE (1) SE332232B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263174A (en) * 1969-06-11 1972-02-09 Westinghouse Brake & Signal Semiconductor device
US3624464A (en) * 1969-12-12 1971-11-30 Gen Electric Peripheral gate scr with annular ballast segment for more uniform turn on
CH578254A5 (de) * 1974-12-03 1976-07-30 Bbc Brown Boveri & Cie

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1166940B (de) * 1961-03-21 1964-04-02 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnden Leitfaehigkeitstyps und Verfahren zum Herstellen
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers

Also Published As

Publication number Publication date
DE1539694B2 (de) 1971-04-29
SE332232B (de) 1971-02-01
US3531697A (en) 1970-09-29
NL6709120A (de) 1968-01-03
FR1530036A (fr) 1968-06-21
DE1539694A1 (de) 1970-11-12
GB1166154A (en) 1969-10-08

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Legal Events

Date Code Title Description
PL Patent ceased