NL1017849C2 - Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. - Google Patents

Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. Download PDF

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Publication number
NL1017849C2
NL1017849C2 NL1017849A NL1017849A NL1017849C2 NL 1017849 C2 NL1017849 C2 NL 1017849C2 NL 1017849 A NL1017849 A NL 1017849A NL 1017849 A NL1017849 A NL 1017849A NL 1017849 C2 NL1017849 C2 NL 1017849C2
Authority
NL
Netherlands
Prior art keywords
fluid
plasma
substrate
plasma chamber
chamber
Prior art date
Application number
NL1017849A
Other languages
English (en)
Dutch (nl)
Inventor
Daniel Cornelis Schram
Mauritius Cornelius Mar Sanden
Edward Aloys Gerard Hamers
Arno Hendrikus Marie Smets
Original Assignee
Univ Eindhoven Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL1017849A priority Critical patent/NL1017849C2/nl
Application filed by Univ Eindhoven Tech filed Critical Univ Eindhoven Tech
Priority to US10/473,222 priority patent/US7160809B2/en
Priority to ES02722981T priority patent/ES2321165T3/es
Priority to CNB028082583A priority patent/CN1279211C/zh
Priority to BR0208601-8A priority patent/BR0208601A/pt
Priority to DE60230732T priority patent/DE60230732D1/de
Priority to RU2003133288/02A priority patent/RU2258764C1/ru
Priority to MXPA03008426A priority patent/MXPA03008426A/es
Priority to KR1020037013272A priority patent/KR100758921B1/ko
Priority to AT02722981T priority patent/ATE420221T1/de
Priority to EP02722981A priority patent/EP1381710B1/en
Priority to CA2442575A priority patent/CA2442575C/en
Priority to PT02722981T priority patent/PT1381710E/pt
Priority to AU2002253725A priority patent/AU2002253725B2/en
Priority to PCT/NL2002/000244 priority patent/WO2002083979A2/en
Application granted granted Critical
Publication of NL1017849C2 publication Critical patent/NL1017849C2/nl
Priority to ZA200307301A priority patent/ZA200307301B/en
Priority to CY20091100385T priority patent/CY1108949T1/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
NL1017849A 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. NL1017849C2 (nl)

Priority Applications (17)

Application Number Priority Date Filing Date Title
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
EP02722981A EP1381710B1 (en) 2001-04-16 2002-04-12 Process and device for the deposition of a microcrystalline silicon layer on a substrate
CNB028082583A CN1279211C (zh) 2001-04-16 2002-04-12 在基质上沉积至少部分结晶硅层的方法和设备
BR0208601-8A BR0208601A (pt) 2001-04-16 2002-04-12 Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato
DE60230732T DE60230732D1 (de) 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat
RU2003133288/02A RU2258764C1 (ru) 2001-04-16 2002-04-12 Способ и устройство для осаждения по меньшей мере частично кристаллического кремниевого слоя на подложку
MXPA03008426A MXPA03008426A (es) 2001-04-16 2002-04-12 Proceso y dispositivo para la deposicion de una capa de silicio al menos parcialmente cristalino sobre un substrato.
KR1020037013272A KR100758921B1 (ko) 2001-04-16 2002-04-12 기판상에 적어도 부분적인 결정성 실리콘 층을 증착하는 방법 및 장치
US10/473,222 US7160809B2 (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
ES02722981T ES2321165T3 (es) 2001-04-16 2002-04-12 Proceso y dispositivo para depositar una capa de silicio cristalina sobre un sustrato.
CA2442575A CA2442575C (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
PT02722981T PT1381710E (pt) 2001-04-16 2002-04-12 Processo e dispositivo para a deposição de uma camada de silício microcristalino num substrato
AU2002253725A AU2002253725B2 (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
PCT/NL2002/000244 WO2002083979A2 (en) 2001-04-16 2002-04-12 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
AT02722981T ATE420221T1 (de) 2001-04-16 2002-04-12 Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat
ZA200307301A ZA200307301B (en) 2001-04-16 2003-09-18 Process and device for the deposition of an least partially crystalline silicium layer on a substrate.
CY20091100385T CY1108949T1 (el) 2001-04-16 2009-04-02 Διαδικασια και συσκευη για την εναποθεση στρωματος μικροκρυσταλλικου πυριτιου σε υποστρωμα

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1017849 2001-04-16
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.

Publications (1)

Publication Number Publication Date
NL1017849C2 true NL1017849C2 (nl) 2002-10-30

Family

ID=19773241

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1017849A NL1017849C2 (nl) 2001-04-16 2001-04-16 Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.

Country Status (17)

Country Link
US (1) US7160809B2 (es)
EP (1) EP1381710B1 (es)
KR (1) KR100758921B1 (es)
CN (1) CN1279211C (es)
AT (1) ATE420221T1 (es)
AU (1) AU2002253725B2 (es)
BR (1) BR0208601A (es)
CA (1) CA2442575C (es)
CY (1) CY1108949T1 (es)
DE (1) DE60230732D1 (es)
ES (1) ES2321165T3 (es)
MX (1) MXPA03008426A (es)
NL (1) NL1017849C2 (es)
PT (1) PT1381710E (es)
RU (1) RU2258764C1 (es)
WO (1) WO2002083979A2 (es)
ZA (1) ZA200307301B (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821637B1 (en) 2007-02-22 2010-10-26 J.A. Woollam Co., Inc. System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing
CN102047066B (zh) * 2008-04-14 2013-01-16 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
EP2141259B1 (en) * 2008-07-04 2018-10-31 ABB Schweiz AG Deposition method for passivation of silicon wafers
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
US10011920B2 (en) * 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
EP2694700B1 (en) * 2011-04-07 2016-11-16 Picosun Oy Atomic layer deposition with plasma source
JP6110106B2 (ja) * 2012-11-13 2017-04-05 Ｊｓｗアフティ株式会社 薄膜形成装置
SG11201503227XA (en) 2012-11-23 2015-06-29 Picosun Oy Substrate loading in an ald reactor
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
RU2733941C2 (ru) * 2019-04-01 2020-10-08 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковой структуры

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194065A (ja) * 1984-11-09 1985-10-02 Hitachi Ltd 分子線堆積方法
JPS60257130A (ja) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan ラジカルビ−ムを用いた薄膜形成方法
EP0297637A1 (en) * 1987-06-30 1989-01-04 Technische Universiteit Eindhoven Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method
US5591492A (en) * 1986-04-11 1997-01-07 Canon Kabushiki Kaisha Process for forming and etching a film to effect specific crystal growth from activated species
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69531654T2 (de) * 1994-06-15 2004-07-29 Seiko Epson Corp. Verfahren zur herstellung eines dünnschicht-halbleiter-transistors
US6152071A (en) * 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257130A (ja) * 1984-06-01 1985-12-18 Res Dev Corp Of Japan ラジカルビ−ムを用いた薄膜形成方法
JPS60194065A (ja) * 1984-11-09 1985-10-02 Hitachi Ltd 分子線堆積方法
US5591492A (en) * 1986-04-11 1997-01-07 Canon Kabushiki Kaisha Process for forming and etching a film to effect specific crystal growth from activated species
EP0297637A1 (en) * 1987-06-30 1989-01-04 Technische Universiteit Eindhoven Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method
WO2000074932A1 (en) * 1999-06-03 2000-12-14 The Penn State Research Foundation Deposited thin film void-column network materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 049 (C - 330) 26 February 1986 (1986-02-26) *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 125 (E - 402) 10 May 1986 (1986-05-10) *
SEVERENS R J ET AL: "AN EXPANDING THERMAL PLASMA FOR DEPOSITION OF A-SI:H", AMORPHOUS SILICON TECHNOLOGY 1995. SAN FRANCISCO, APRIL 18 - 21, 1995, MRS SYMPOSIUM PROCEEDINGS, PITTSBURGH, MRS, US, vol. 377, 18 April 1995 (1995-04-18), pages 33 - 38, XP000656314, ISBN: 1-55899-280-4 *
WILBERS A T M ET AL: "AMORPHOUS HYDROGENATED SILICON FILMS PRODUCED BY AN EXPANDING ARGON-SILANE PLASMA INVESTIGATED WITH SPECTROSCOPIC IR ELLIPSOMETRY", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 204, no. 1, 20 September 1991 (1991-09-20), pages 59 - 75, XP000275034, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
PT1381710E (pt) 2009-04-15
CN1503857A (zh) 2004-06-09
AU2002253725B2 (en) 2006-10-05
ES2321165T3 (es) 2009-06-03
BR0208601A (pt) 2004-03-23
CN1279211C (zh) 2006-10-11
CA2442575A1 (en) 2002-10-24
KR20030092060A (ko) 2003-12-03
RU2003133288A (ru) 2005-05-10
ZA200307301B (en) 2004-05-21
ATE420221T1 (de) 2009-01-15
US20040097056A1 (en) 2004-05-20
CY1108949T1 (el) 2014-07-02
EP1381710A2 (en) 2004-01-21
RU2258764C1 (ru) 2005-08-20
CA2442575C (en) 2011-07-19
KR100758921B1 (ko) 2007-09-14
WO2002083979A3 (en) 2003-04-24
MXPA03008426A (es) 2004-11-12
WO2002083979A2 (en) 2002-10-24
EP1381710B1 (en) 2009-01-07
US7160809B2 (en) 2007-01-09
DE60230732D1 (de) 2009-02-26

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Effective date: 20091101