NL1005932C2 - Werkwijze voor het verhinderen van de vorming van ionenimplantatiegeïnduceerde randdefecten. - Google Patents
Werkwijze voor het verhinderen van de vorming van ionenimplantatiegeïnduceerde randdefecten. Download PDFInfo
- Publication number
- NL1005932C2 NL1005932C2 NL1005932A NL1005932A NL1005932C2 NL 1005932 C2 NL1005932 C2 NL 1005932C2 NL 1005932 A NL1005932 A NL 1005932A NL 1005932 A NL1005932 A NL 1005932A NL 1005932 C2 NL1005932 C2 NL 1005932C2
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- surface layer
- implantation
- depression
- recrystallization
- Prior art date
Links
- 230000007547 defect Effects 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 39
- 230000015572 biosynthetic process Effects 0.000 title claims description 23
- 238000005468 ion implantation Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 88
- 239000002344 surface layer Substances 0.000 claims description 57
- 150000002500 ions Chemical class 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 description 58
- 238000001953 recrystallisation Methods 0.000 description 35
- 239000010410 layer Substances 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 20
- 230000015654 memory Effects 0.000 description 14
- 238000003860 storage Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000002054 transplantation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9716401A GB2323706B (en) | 1997-03-13 | 1997-03-24 | Method to inhibit the formation of ion implantation induced edge defects |
GB9706080A GB2323703B (en) | 1997-03-13 | 1997-03-24 | Method to inhibit the formation of ion implantation induced edge defects |
DE19716368A DE19716368A1 (de) | 1997-03-13 | 1997-04-18 | Verfahren zum Verhindern der Ausbildung von durch Ionenimplantierung hervorgerufener Randdefekte |
NL1005932A NL1005932C2 (nl) | 1997-03-13 | 1997-04-29 | Werkwijze voor het verhinderen van de vorming van ionenimplantatiegeïnduceerde randdefecten. |
CN97110966A CN1072390C (zh) | 1997-03-13 | 1997-04-29 | 在半导体基底上进行离子注入的方法 |
FR9705289A FR2760895B1 (fr) | 1997-03-13 | 1997-04-29 | Procede d'implantation d'ions dans un substrat de facon a minimiser la formation de defauts |
US08/857,733 US5989986A (en) | 1997-03-13 | 1997-05-16 | Method to inhibit the formation of ion implantation induced edge defects |
NL1010154A NL1010154C2 (nl) | 1997-03-13 | 1998-09-22 | Werkwijze voor het verhinderen van de vorming van ionenimplantatie-geïnduceerde randdefecten. |
Applications Claiming Priority (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW86103096 | 1997-03-13 | ||
TW86103096 | 1997-03-13 | ||
GB9706080A GB2323703B (en) | 1997-03-13 | 1997-03-24 | Method to inhibit the formation of ion implantation induced edge defects |
GB9706080 | 1997-03-24 | ||
SG9700956 | 1997-03-25 | ||
SG1997000956A SG67382A1 (en) | 1997-03-25 | 1997-03-25 | Method to inhibit the formation of ion implantation induced edge defects |
DE19716368 | 1997-04-18 | ||
DE19716368A DE19716368A1 (de) | 1997-03-13 | 1997-04-18 | Verfahren zum Verhindern der Ausbildung von durch Ionenimplantierung hervorgerufener Randdefekte |
NL1005932 | 1997-04-29 | ||
NL1005932A NL1005932C2 (nl) | 1997-03-13 | 1997-04-29 | Werkwijze voor het verhinderen van de vorming van ionenimplantatiegeïnduceerde randdefecten. |
CN97110966A CN1072390C (zh) | 1997-03-13 | 1997-04-29 | 在半导体基底上进行离子注入的方法 |
CN97110966 | 1997-04-29 | ||
US08/857,733 US5989986A (en) | 1997-03-13 | 1997-05-16 | Method to inhibit the formation of ion implantation induced edge defects |
US85773397 | 1997-05-16 | ||
JP15851097 | 1997-06-16 | ||
JP15851097A JPH1116847A (ja) | 1997-06-16 | 1997-06-16 | イオン打ち込みに起因する端部欠陥形成の抑制方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL1005932C2 true NL1005932C2 (nl) | 1998-11-02 |
Family
ID=27570426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1005932A NL1005932C2 (nl) | 1997-03-13 | 1997-04-29 | Werkwijze voor het verhinderen van de vorming van ionenimplantatiegeïnduceerde randdefecten. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5989986A (de) |
CN (1) | CN1072390C (de) |
DE (1) | DE19716368A1 (de) |
FR (1) | FR2760895B1 (de) |
GB (2) | GB2323706B (de) |
NL (1) | NL1005932C2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6403454B1 (en) * | 1999-10-29 | 2002-06-11 | Agere Systems Guardian Corp. | Silicon semiconductor devices with δ-doped layers |
US7429775B1 (en) | 2005-03-31 | 2008-09-30 | Xilinx, Inc. | Method of fabricating strain-silicon CMOS |
US7423283B1 (en) | 2005-06-07 | 2008-09-09 | Xilinx, Inc. | Strain-silicon CMOS using etch-stop layer and method of manufacture |
US7655991B1 (en) * | 2005-09-08 | 2010-02-02 | Xilinx, Inc. | CMOS device with stressed sidewall spacers |
US7936006B1 (en) | 2005-10-06 | 2011-05-03 | Xilinx, Inc. | Semiconductor device with backfilled isolation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62245675A (ja) * | 1986-04-18 | 1987-10-26 | Citizen Watch Co Ltd | Ldd型mosトランジスタとその製造方法 |
US5482876A (en) * | 1995-05-25 | 1996-01-09 | United Microelectronics Corporation | Field effect transistor without spacer mask edge defects |
EP0762490A2 (de) * | 1995-08-25 | 1997-03-12 | Oki Electric Industry Co., Ltd. | Verfahren zur Herstellung einer LDD-MOSFET |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1332932A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
GB1485269A (en) * | 1974-06-26 | 1977-09-08 | Labaz | Pharmaceutical compositions containing acetic acid derivatives |
JPS6041458B2 (ja) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | 半導体装置の製造方法 |
US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
GB2115609B (en) * | 1982-02-25 | 1986-04-30 | Raytheon Co | Semiconductor structure manufacturing method |
JPS5935425A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS60223165A (ja) * | 1984-04-19 | 1985-11-07 | Toshiba Corp | 半導体装置の製造方法 |
NL8502765A (nl) * | 1985-10-10 | 1987-05-04 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
US4968634A (en) * | 1988-05-20 | 1990-11-06 | Siemens Aktiengesellschaft | Fabrication process for photodiodes responsive to blue light |
US5217924A (en) * | 1989-05-12 | 1993-06-08 | Texas Instruments Incorporated | Method for forming shallow junctions with a low resistivity silicide layer |
JPH03190221A (ja) * | 1989-12-20 | 1991-08-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH04155830A (ja) * | 1990-10-18 | 1992-05-28 | Sharp Corp | 半導体装置の製造方法 |
DE4306565C2 (de) * | 1993-03-03 | 1995-09-28 | Telefunken Microelectron | Verfahren zur Herstellung eines blauempfindlichen Photodetektors |
JPH07245397A (ja) * | 1994-03-07 | 1995-09-19 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US5576230A (en) * | 1994-09-02 | 1996-11-19 | Texas Instruments Incorporated | Method of fabrication of a semiconductor device having a tapered implanted region |
US5523244A (en) * | 1994-12-19 | 1996-06-04 | Hughes Aircraft Company | Transistor fabrication method using dielectric protection layers to eliminate emitter defects |
US5498556A (en) * | 1995-01-10 | 1996-03-12 | United Microelectronics Corp. | Metal-oxide-semiconductor field-effect transistor and its method of fabrication |
GB9512089D0 (en) * | 1995-06-14 | 1995-08-09 | Evans Jonathan L | Semiconductor device fabrication |
US5552331A (en) * | 1995-07-11 | 1996-09-03 | Advanced Micro Devices, Inc. | Process for self-aligned source for high density memory |
-
1997
- 1997-03-24 GB GB9716401A patent/GB2323706B/en not_active Expired - Fee Related
- 1997-03-24 GB GB9706080A patent/GB2323703B/en not_active Expired - Fee Related
- 1997-04-18 DE DE19716368A patent/DE19716368A1/de not_active Withdrawn
- 1997-04-29 NL NL1005932A patent/NL1005932C2/nl not_active IP Right Cessation
- 1997-04-29 CN CN97110966A patent/CN1072390C/zh not_active Expired - Fee Related
- 1997-04-29 FR FR9705289A patent/FR2760895B1/fr not_active Expired - Fee Related
- 1997-05-16 US US08/857,733 patent/US5989986A/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62245675A (ja) * | 1986-04-18 | 1987-10-26 | Citizen Watch Co Ltd | Ldd型mosトランジスタとその製造方法 |
US5482876A (en) * | 1995-05-25 | 1996-01-09 | United Microelectronics Corporation | Field effect transistor without spacer mask edge defects |
EP0762490A2 (de) * | 1995-08-25 | 1997-03-12 | Oki Electric Industry Co., Ltd. | Verfahren zur Herstellung einer LDD-MOSFET |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 012, no. 115 (E - 599) 12 April 1988 (1988-04-12) * |
Also Published As
Publication number | Publication date |
---|---|
GB9716401D0 (en) | 1997-10-08 |
DE19716368A1 (de) | 1998-10-22 |
GB2323706B (en) | 2002-02-13 |
CN1197999A (zh) | 1998-11-04 |
GB9706080D0 (en) | 1997-05-14 |
GB2323703B (en) | 2002-02-13 |
GB2323706A (en) | 1998-09-30 |
FR2760895A1 (fr) | 1998-09-18 |
CN1072390C (zh) | 2001-10-03 |
GB2323703A (en) | 1998-09-30 |
FR2760895B1 (fr) | 1999-05-21 |
US5989986A (en) | 1999-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PD2B | A search report has been drawn up | ||
VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20091101 |