GB2115609B - Semiconductor structure manufacturing method - Google Patents
Semiconductor structure manufacturing methodInfo
- Publication number
- GB2115609B GB2115609B GB08304462A GB8304462A GB2115609B GB 2115609 B GB2115609 B GB 2115609B GB 08304462 A GB08304462 A GB 08304462A GB 8304462 A GB8304462 A GB 8304462A GB 2115609 B GB2115609 B GB 2115609B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor structure
- structure manufacturing
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35243982A | 1982-02-25 | 1982-02-25 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8304462D0 GB8304462D0 (en) | 1983-03-23 |
GB2115609A GB2115609A (en) | 1983-09-07 |
GB2115609B true GB2115609B (en) | 1986-04-30 |
Family
ID=23385144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08304462A Expired GB2115609B (en) | 1982-02-25 | 1983-02-17 | Semiconductor structure manufacturing method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS58158943A (en) |
DE (1) | DE3306702A1 (en) |
GB (1) | GB2115609B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2206994A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | Semiconductor device |
GB2323706B (en) * | 1997-03-13 | 2002-02-13 | United Microelectronics Corp | Method to inhibit the formation of ion implantation induced edge defects |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL173110C (en) * | 1971-03-17 | 1983-12-01 | Philips Nv | METHOD FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE APPLICATING ON A SURFACE OF A SEMI-CONDUCTOR BODY AT LEAST TWO PART-LAYERS OF DIFFERENT MATERIAL COATING. |
JPS5361285A (en) * | 1976-11-15 | 1978-06-01 | Hitachi Ltd | Production of semiconductor device |
US4187125A (en) * | 1976-12-27 | 1980-02-05 | Raytheon Company | Method for manufacturing semiconductor structures by anisotropic and isotropic etching |
CA1090006A (en) * | 1976-12-27 | 1980-11-18 | Wolfgang M. Feist | Semiconductor structures and methods for manufacturing such structures |
JPS5731153A (en) * | 1980-08-01 | 1982-02-19 | Nec Corp | Manufacture of semiconductor device |
-
1983
- 1983-02-17 GB GB08304462A patent/GB2115609B/en not_active Expired
- 1983-02-25 DE DE19833306702 patent/DE3306702A1/en not_active Ceased
- 1983-02-25 JP JP3068083A patent/JPS58158943A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB8304462D0 (en) | 1983-03-23 |
GB2115609A (en) | 1983-09-07 |
DE3306702A1 (en) | 1983-09-01 |
JPS58158943A (en) | 1983-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0097379A3 (en) | Method for manufacturing semiconductor devices | |
DE3366564D1 (en) | Method for manufacturing semiconductor device | |
GB8317126D0 (en) | Manufacturing semiconductor devices | |
GB2141386B (en) | Fabricating semiconductor devices | |
GB2140618B (en) | Semiconductor manufacturing methods | |
DE3378872D1 (en) | Semiconductor devices and method for making the same | |
EP0146895A3 (en) | Method of manufacturing semiconductor device | |
EP0085988A3 (en) | Semiconductor memory and method for fabricating the same | |
EP0231115A3 (en) | Method for manufacturing semiconductor devices | |
GB8313477D0 (en) | Manufacturing semiconductor devices | |
GB8320110D0 (en) | Wafer | |
GB8401123D0 (en) | Fabricating semiconductor device | |
GB2128401B (en) | Method of manufacturing semiconductor device | |
GB2121602B (en) | Semiconductor fabrication | |
EP0149683A4 (en) | Method of manufacturing semiconductor devices. | |
GB8418927D0 (en) | Semiconductor manufacturing apparatus | |
GB8410200D0 (en) | Making semiconductor devices | |
EP0130847A3 (en) | Semiconductor device manufacturing method | |
GB2167897B (en) | Semiconductor manufacturing methods | |
GB8412275D0 (en) | Manufacturing semiconductor devices | |
DE3474613D1 (en) | Trench-defined semiconductor structure | |
GB8417046D0 (en) | Manufacturing semiconductor device | |
GB2175136B (en) | Semiconductor manufacturing method | |
GB8310609D0 (en) | Forming semiconductor structure | |
EP0144444A4 (en) | Method of manufacturing semiconductor device. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940217 |