GB8304462D0 - Semiconductor structure - Google Patents

Semiconductor structure

Info

Publication number
GB8304462D0
GB8304462D0 GB838304462A GB8304462A GB8304462D0 GB 8304462 D0 GB8304462 D0 GB 8304462D0 GB 838304462 A GB838304462 A GB 838304462A GB 8304462 A GB8304462 A GB 8304462A GB 8304462 D0 GB8304462 D0 GB 8304462D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB838304462A
Other versions
GB2115609A (en
GB2115609B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB8304462D0 publication Critical patent/GB8304462D0/en
Publication of GB2115609A publication Critical patent/GB2115609A/en
Application granted granted Critical
Publication of GB2115609B publication Critical patent/GB2115609B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB08304462A 1982-02-25 1983-02-17 Semiconductor structure manufacturing method Expired GB2115609B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35243982A 1982-02-25 1982-02-25

Publications (3)

Publication Number Publication Date
GB8304462D0 true GB8304462D0 (en) 1983-03-23
GB2115609A GB2115609A (en) 1983-09-07
GB2115609B GB2115609B (en) 1986-04-30

Family

ID=23385144

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08304462A Expired GB2115609B (en) 1982-02-25 1983-02-17 Semiconductor structure manufacturing method

Country Status (3)

Country Link
JP (1) JPS58158943A (en)
DE (1) DE3306702A1 (en)
GB (1) GB2115609B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206994A (en) * 1987-06-08 1989-01-18 Philips Electronic Associated Semiconductor device
GB2323706B (en) * 1997-03-13 2002-02-13 United Microelectronics Corp Method to inhibit the formation of ion implantation induced edge defects

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL173110C (en) * 1971-03-17 1983-12-01 Philips Nv METHOD FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE APPLICATING ON A SURFACE OF A SEMI-CONDUCTOR BODY AT LEAST TWO PART-LAYERS OF DIFFERENT MATERIAL COATING.
JPS5361285A (en) * 1976-11-15 1978-06-01 Hitachi Ltd Production of semiconductor device
US4187125A (en) * 1976-12-27 1980-02-05 Raytheon Company Method for manufacturing semiconductor structures by anisotropic and isotropic etching
CA1090006A (en) * 1976-12-27 1980-11-18 Wolfgang M. Feist Semiconductor structures and methods for manufacturing such structures
JPS5731153A (en) * 1980-08-01 1982-02-19 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58158943A (en) 1983-09-21
GB2115609A (en) 1983-09-07
GB2115609B (en) 1986-04-30
DE3306702A1 (en) 1983-09-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940217