SG67382A1 - Method to inhibit the formation of ion implantation induced edge defects - Google Patents

Method to inhibit the formation of ion implantation induced edge defects

Info

Publication number
SG67382A1
SG67382A1 SG1997000956A SG1997000956A SG67382A1 SG 67382 A1 SG67382 A1 SG 67382A1 SG 1997000956 A SG1997000956 A SG 1997000956A SG 1997000956 A SG1997000956 A SG 1997000956A SG 67382 A1 SG67382 A1 SG 67382A1
Authority
SG
Singapore
Prior art keywords
inhibit
formation
ion implantation
edge defects
induced edge
Prior art date
Application number
SG1997000956A
Inventor
Yong-Fen Hsieh
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB9716401A priority Critical patent/GB2323706B/en
Priority to GB9706080A priority patent/GB2323703B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to SG1997000956A priority patent/SG67382A1/en
Priority to DE19716368A priority patent/DE19716368A1/en
Priority to NL1005932A priority patent/NL1005932C2/en
Priority to CN97110966A priority patent/CN1072390C/en
Priority to FR9705289A priority patent/FR2760895B1/en
Priority to US08/857,733 priority patent/US5989986A/en
Priority to NL1010154A priority patent/NL1010154C2/en
Publication of SG67382A1 publication Critical patent/SG67382A1/en

Links

SG1997000956A 1997-03-13 1997-03-25 Method to inhibit the formation of ion implantation induced edge defects SG67382A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB9716401A GB2323706B (en) 1997-03-13 1997-03-24 Method to inhibit the formation of ion implantation induced edge defects
GB9706080A GB2323703B (en) 1997-03-13 1997-03-24 Method to inhibit the formation of ion implantation induced edge defects
SG1997000956A SG67382A1 (en) 1997-03-25 1997-03-25 Method to inhibit the formation of ion implantation induced edge defects
DE19716368A DE19716368A1 (en) 1997-03-13 1997-04-18 Ion implantation method for semiconductor manufacture e.g. DRAM
NL1005932A NL1005932C2 (en) 1997-03-13 1997-04-29 A method for preventing the formation of ion implantation-induced edge defects.
CN97110966A CN1072390C (en) 1997-03-13 1997-04-29 Ion implantation in semiconductor substrate
FR9705289A FR2760895B1 (en) 1997-03-13 1997-04-29 METHOD FOR IMPLANTING IONS INTO A SUBSTRATE TO MINIMIZE DEFECT FORMATION
US08/857,733 US5989986A (en) 1997-03-13 1997-05-16 Method to inhibit the formation of ion implantation induced edge defects
NL1010154A NL1010154C2 (en) 1997-03-13 1998-09-22 Ion implantation method for semiconductor manufacture e.g. DRAM - by determining surface layer thickness through which implantation can be carried out, providing it and implanting ions into substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG1997000956A SG67382A1 (en) 1997-03-25 1997-03-25 Method to inhibit the formation of ion implantation induced edge defects

Publications (1)

Publication Number Publication Date
SG67382A1 true SG67382A1 (en) 1999-09-21

Family

ID=20429606

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997000956A SG67382A1 (en) 1997-03-13 1997-03-25 Method to inhibit the formation of ion implantation induced edge defects

Country Status (1)

Country Link
SG (1) SG67382A1 (en)

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