MY174359A - Single crystal cvd synthetic diamond material - Google Patents
Single crystal cvd synthetic diamond materialInfo
- Publication number
- MY174359A MY174359A MYPI2014701588A MYPI2014701588A MY174359A MY 174359 A MY174359 A MY 174359A MY PI2014701588 A MYPI2014701588 A MY PI2014701588A MY PI2014701588 A MYPI2014701588 A MY PI2014701588A MY 174359 A MY174359 A MY 174359A
- Authority
- MY
- Malaysia
- Prior art keywords
- intensity
- less
- equal
- variation
- area
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- 229910003460 diamond Inorganic materials 0.000 title abstract 5
- 239000010432 diamond Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 title abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 16
- 229910052757 nitrogen Inorganic materials 0.000 abstract 8
- 238000001069 Raman spectroscopy Methods 0.000 abstract 7
- 230000007547 defect Effects 0.000 abstract 7
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 230000005284 excitation Effects 0.000 abstract 3
- 238000004458 analytical method Methods 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 abstract 2
- 238000009827 uniform distribution Methods 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 238000001000 micrograph Methods 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 238000005424 photoluminescence Methods 0.000 abstract 1
- 238000005070 sampling Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161576465P | 2011-12-16 | 2011-12-16 | |
| GBGB1121642.1A GB201121642D0 (en) | 2011-12-16 | 2011-12-16 | Single crtstal cvd synthetic diamond material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY174359A true MY174359A (en) | 2020-04-10 |
Family
ID=45560552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2014701588A MY174359A (en) | 2011-12-16 | 2012-12-12 | Single crystal cvd synthetic diamond material |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9260797B2 (https=) |
| EP (1) | EP2791399B8 (https=) |
| JP (1) | JP5786214B2 (https=) |
| CN (1) | CN104185697B (https=) |
| CA (1) | CA2858965C (https=) |
| GB (2) | GB201121642D0 (https=) |
| IL (1) | IL233038A (https=) |
| MY (1) | MY174359A (https=) |
| SG (1) | SG11201403256TA (https=) |
| WO (1) | WO2013087697A1 (https=) |
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| KR20080044206A (ko) | 2005-05-25 | 2008-05-20 | 카네기 인스티튜션 오브 워싱턴 | 신속한 성장 속도의 무색 단결정 ｃｖｄ 다이아몬드 |
| TWI410538B (zh) | 2005-11-15 | 2013-10-01 | Carnegie Inst Of Washington | 建基於以快速生長速率製造之單晶ｃｖｄ鑽石的新穎鑽石的用途／應用 |
| US9133566B2 (en) | 2005-12-09 | 2015-09-15 | Element Six Technologies Limited | High crystalline quality synthetic diamond |
| DE602006021467D1 (de) * | 2005-12-09 | 2011-06-01 | Element Six Technologies Pty Ltd | Synthetischer diamant mit hoher kristalliner qualität |
| JP5284575B2 (ja) | 2006-10-31 | 2013-09-11 | 住友電気工業株式会社 | ダイヤモンド単結晶及びその製造方法 |
| JP4869196B2 (ja) | 2007-09-20 | 2012-02-08 | 京セラ株式会社 | 回転式拡散装置および光電変換装置の製造方法 |
| GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
| GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
| AU2009324921A1 (en) | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal CVD diamond rapid growth rate |
| JP5891564B2 (ja) | 2009-06-26 | 2016-03-23 | エレメント シックス リミテッド | ファンシーな淡い青色又はファンシーな淡い青色／緑色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品 |
| GB2476478A (en) * | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
| US10273598B2 (en) | 2009-12-22 | 2019-04-30 | Element Six Technologies Limited | Synthetic CVD diamond |
| WO2011151414A2 (en) * | 2010-06-03 | 2011-12-08 | Element Six Limited | Diamond tools |
| GB201021913D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
| GB201108644D0 (en) * | 2011-05-24 | 2011-07-06 | Element Six Ltd | Diamond sensors, detectors, and quantum devices |
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2011
- 2011-12-16 GB GBGB1121642.1A patent/GB201121642D0/en not_active Ceased
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2012
- 2012-12-12 SG SG11201403256TA patent/SG11201403256TA/en unknown
- 2012-12-12 MY MYPI2014701588A patent/MY174359A/en unknown
- 2012-12-12 WO PCT/EP2012/075237 patent/WO2013087697A1/en not_active Ceased
- 2012-12-12 GB GB1222318.6A patent/GB2497660B/en active Active
- 2012-12-12 CN CN201280068219.4A patent/CN104185697B/zh active Active
- 2012-12-12 EP EP12809688.0A patent/EP2791399B8/en active Active
- 2012-12-12 US US14/362,822 patent/US9260797B2/en active Active
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| JP2015505810A (ja) | 2015-02-26 |
| GB2497660A (en) | 2013-06-19 |
| WO2013087697A1 (en) | 2013-06-20 |
| GB201222318D0 (en) | 2013-01-23 |
| SG11201403256TA (en) | 2014-07-30 |
| CA2858965C (en) | 2016-04-26 |
| IL233038A (en) | 2017-05-29 |
| EP2791399B1 (en) | 2017-03-29 |
| EP2791399B8 (en) | 2017-06-07 |
| IL233038A0 (en) | 2014-07-31 |
| GB201121642D0 (en) | 2012-01-25 |
| US9260797B2 (en) | 2016-02-16 |
| JP5786214B2 (ja) | 2015-09-30 |
| HK1204348A1 (en) | 2015-11-13 |
| GB2497660B (en) | 2014-08-06 |
| CA2858965A1 (en) | 2013-06-20 |
| EP2791399A1 (en) | 2014-10-22 |
| US20140335339A1 (en) | 2014-11-13 |
| CN104185697A (zh) | 2014-12-03 |
| CN104185697B (zh) | 2017-03-15 |
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