CA2858965C - Single crystal cvd synthetic diamond material - Google Patents
Single crystal cvd synthetic diamond material Download PDFInfo
- Publication number
- CA2858965C CA2858965C CA2858965A CA2858965A CA2858965C CA 2858965 C CA2858965 C CA 2858965C CA 2858965 A CA2858965 A CA 2858965A CA 2858965 A CA2858965 A CA 2858965A CA 2858965 C CA2858965 C CA 2858965C
- Authority
- CA
- Canada
- Prior art keywords
- single crystal
- diamond material
- nitrogen
- synthetic diamond
- crystal cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161576465P | 2011-12-16 | 2011-12-16 | |
| GBGB1121642.1A GB201121642D0 (en) | 2011-12-16 | 2011-12-16 | Single crtstal cvd synthetic diamond material |
| US61/576,465 | 2011-12-16 | ||
| GB1121642.1 | 2011-12-16 | ||
| PCT/EP2012/075237 WO2013087697A1 (en) | 2011-12-16 | 2012-12-12 | Single crystal cvd synthetic diamond material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2858965A1 CA2858965A1 (en) | 2013-06-20 |
| CA2858965C true CA2858965C (en) | 2016-04-26 |
Family
ID=45560552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2858965A Active CA2858965C (en) | 2011-12-16 | 2012-12-12 | Single crystal cvd synthetic diamond material |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9260797B2 (https=) |
| EP (1) | EP2791399B8 (https=) |
| JP (1) | JP5786214B2 (https=) |
| CN (1) | CN104185697B (https=) |
| CA (1) | CA2858965C (https=) |
| GB (2) | GB201121642D0 (https=) |
| IL (1) | IL233038A (https=) |
| MY (1) | MY174359A (https=) |
| SG (1) | SG11201403256TA (https=) |
| WO (1) | WO2013087697A1 (https=) |
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| GB2540537A (en) * | 2015-07-03 | 2017-01-25 | Univ Oxford Innovation Ltd | Crystal defects |
| CN107109691B (zh) * | 2015-07-22 | 2021-05-25 | 住友电气工业株式会社 | 单晶金刚石材料、单晶金刚石芯片和穿孔工具 |
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| GB201516814D0 (en) | 2015-09-23 | 2015-11-04 | Element Six Technologies Ltd | Method of fabricating a plurality of single crystal CVD synthetic diamonds |
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| GB201522650D0 (en) | 2015-12-22 | 2016-02-03 | Element Six Technologies Ltd | Nitrogen containing single crystal diamond materials optimized for magnetometr applications |
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| JP7382692B1 (ja) | 2023-03-08 | 2023-11-17 | 株式会社ディスコ | デトネーションダイヤモンド含有単結晶質ダイヤモンド、デトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子、およびデトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子の製造方法 |
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| DE602006021467D1 (de) * | 2005-12-09 | 2011-06-01 | Element Six Technologies Pty Ltd | Synthetischer diamant mit hoher kristalliner qualität |
| JP5284575B2 (ja) | 2006-10-31 | 2013-09-11 | 住友電気工業株式会社 | ダイヤモンド単結晶及びその製造方法 |
| JP4869196B2 (ja) | 2007-09-20 | 2012-02-08 | 京セラ株式会社 | 回転式拡散装置および光電変換装置の製造方法 |
| GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
| GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
| AU2009324921A1 (en) | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal CVD diamond rapid growth rate |
| JP5891564B2 (ja) | 2009-06-26 | 2016-03-23 | エレメント シックス リミテッド | ファンシーな淡い青色又はファンシーな淡い青色／緑色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品 |
| GB2476478A (en) * | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
| US10273598B2 (en) | 2009-12-22 | 2019-04-30 | Element Six Technologies Limited | Synthetic CVD diamond |
| WO2011151414A2 (en) * | 2010-06-03 | 2011-12-08 | Element Six Limited | Diamond tools |
| GB201021913D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
| GB201108644D0 (en) * | 2011-05-24 | 2011-07-06 | Element Six Ltd | Diamond sensors, detectors, and quantum devices |
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2011
- 2011-12-16 GB GBGB1121642.1A patent/GB201121642D0/en not_active Ceased
-
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- 2012-12-12 MY MYPI2014701588A patent/MY174359A/en unknown
- 2012-12-12 WO PCT/EP2012/075237 patent/WO2013087697A1/en not_active Ceased
- 2012-12-12 GB GB1222318.6A patent/GB2497660B/en active Active
- 2012-12-12 CN CN201280068219.4A patent/CN104185697B/zh active Active
- 2012-12-12 EP EP12809688.0A patent/EP2791399B8/en active Active
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- 2012-12-12 CA CA2858965A patent/CA2858965C/en active Active
- 2012-12-12 JP JP2014546485A patent/JP5786214B2/ja active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2015505810A (ja) | 2015-02-26 |
| GB2497660A (en) | 2013-06-19 |
| WO2013087697A1 (en) | 2013-06-20 |
| GB201222318D0 (en) | 2013-01-23 |
| SG11201403256TA (en) | 2014-07-30 |
| IL233038A (en) | 2017-05-29 |
| EP2791399B1 (en) | 2017-03-29 |
| EP2791399B8 (en) | 2017-06-07 |
| IL233038A0 (en) | 2014-07-31 |
| GB201121642D0 (en) | 2012-01-25 |
| US9260797B2 (en) | 2016-02-16 |
| JP5786214B2 (ja) | 2015-09-30 |
| HK1204348A1 (en) | 2015-11-13 |
| GB2497660B (en) | 2014-08-06 |
| MY174359A (en) | 2020-04-10 |
| CA2858965A1 (en) | 2013-06-20 |
| EP2791399A1 (en) | 2014-10-22 |
| US20140335339A1 (en) | 2014-11-13 |
| CN104185697A (zh) | 2014-12-03 |
| CN104185697B (zh) | 2017-03-15 |
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