WO2016144256A8 - Monocrystalline diamonds and methods of growing the same - Google Patents

Monocrystalline diamonds and methods of growing the same Download PDF

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Publication number
WO2016144256A8
WO2016144256A8 PCT/SG2016/000001 SG2016000001W WO2016144256A8 WO 2016144256 A8 WO2016144256 A8 WO 2016144256A8 SG 2016000001 W SG2016000001 W SG 2016000001W WO 2016144256 A8 WO2016144256 A8 WO 2016144256A8
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
laser
nitrogen
wavelength
absence
Prior art date
Application number
PCT/SG2016/000001
Other languages
French (fr)
Other versions
WO2016144256A1 (en
Inventor
Devi Shanker Misra
Original Assignee
Iia Technologies Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/642,422 external-priority patent/US20150240383A1/en
Application filed by Iia Technologies Pte. Ltd. filed Critical Iia Technologies Pte. Ltd.
Priority to SG11201706619YA priority Critical patent/SG11201706619YA/en
Priority to US15/555,821 priority patent/US20180087183A1/en
Priority to JP2017547124A priority patent/JP2018512358A/en
Priority to CN201680014296.XA priority patent/CN107407005A/en
Priority to EP16762068.1A priority patent/EP3268515A1/en
Priority to KR1020177025815A priority patent/KR20170126926A/en
Publication of WO2016144256A1 publication Critical patent/WO2016144256A1/en
Publication of WO2016144256A8 publication Critical patent/WO2016144256A8/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Lasers (AREA)

Abstract

A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 μm wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm-1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm-1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.
PCT/SG2016/000001 2015-03-09 2016-03-09 Monocrystalline diamonds and methods of growing the same WO2016144256A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SG11201706619YA SG11201706619YA (en) 2015-03-09 2016-03-09 Monocrystalline diamonds and methods of growing the same
US15/555,821 US20180087183A1 (en) 2015-03-09 2016-03-09 Monocrystalline diamonds and methods of growing the same
JP2017547124A JP2018512358A (en) 2015-03-09 2016-03-09 Single crystal diamond and growth method thereof
CN201680014296.XA CN107407005A (en) 2015-03-09 2016-03-09 Single-crystal diamond and its growing method
EP16762068.1A EP3268515A1 (en) 2015-03-09 2016-03-09 Monocrystalline diamonds and methods of growing the same
KR1020177025815A KR20170126926A (en) 2015-03-09 2016-03-09 Monocrystalline diamond and how to grow it

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/642,422 US20150240383A1 (en) 2008-06-18 2015-03-09 Monocrystalline diamonds and methods of growing the same
US14/642,422 2015-03-09

Publications (2)

Publication Number Publication Date
WO2016144256A1 WO2016144256A1 (en) 2016-09-15
WO2016144256A8 true WO2016144256A8 (en) 2017-09-28

Family

ID=56880371

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2016/000001 WO2016144256A1 (en) 2015-03-09 2016-03-09 Monocrystalline diamonds and methods of growing the same

Country Status (7)

Country Link
EP (1) EP3268515A1 (en)
JP (1) JP2018512358A (en)
KR (1) KR20170126926A (en)
CN (1) CN107407005A (en)
SG (1) SG11201706619YA (en)
TW (1) TW201641420A (en)
WO (1) WO2016144256A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI804596B (en) * 2018-04-24 2023-06-11 美商戴蒙創新公司 Luminescent diamond material and method of producing the same
CN113646623A (en) * 2018-12-10 2021-11-12 金展科技有限公司 Gem color grading processing method and grading system
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN111584382B (en) * 2020-04-27 2023-02-24 哈尔滨工业大学 Method for in-situ characterization of heterogeneous interface state by using diamond NV color center
GB2614521A (en) * 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond
CN113652746B (en) * 2021-10-21 2022-01-25 天津本钻科技有限公司 Method for improving quality of single crystal diamond

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2473720C2 (en) * 2005-06-22 2013-01-27 Элемент Сикс Лимитед Colourless monocrystalline diamond and method for production thereof
SG157973A1 (en) * 2008-06-18 2010-01-29 Indian Inst Technology Bombay Method for growing monocrystalline diamonds
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US9637838B2 (en) * 2010-12-23 2017-05-02 Element Six Limited Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material

Also Published As

Publication number Publication date
JP2018512358A (en) 2018-05-17
KR20170126926A (en) 2017-11-20
WO2016144256A1 (en) 2016-09-15
EP3268515A1 (en) 2018-01-17
SG11201706619YA (en) 2017-09-28
CN107407005A (en) 2017-11-28
TW201641420A (en) 2016-12-01

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