CN104185697B - 单晶cvd合成金刚石材料 - Google Patents

单晶cvd合成金刚石材料 Download PDF

Info

Publication number
CN104185697B
CN104185697B CN201280068219.4A CN201280068219A CN104185697B CN 104185697 B CN104185697 B CN 104185697B CN 201280068219 A CN201280068219 A CN 201280068219A CN 104185697 B CN104185697 B CN 104185697B
Authority
CN
China
Prior art keywords
single crystal
nitrogen
synthetic diamond
crystal cvd
diamond material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280068219.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN104185697A (zh
Inventor
H·K·迪隆
D·J·特威切恩
R·U·A·卡恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Technologies Ltd
Original Assignee
Element Six Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Technologies Ltd filed Critical Element Six Technologies Ltd
Publication of CN104185697A publication Critical patent/CN104185697A/zh
Application granted granted Critical
Publication of CN104185697B publication Critical patent/CN104185697B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CN201280068219.4A 2011-12-16 2012-12-12 单晶cvd合成金刚石材料 Active CN104185697B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161576465P 2011-12-16 2011-12-16
GBGB1121642.1A GB201121642D0 (en) 2011-12-16 2011-12-16 Single crtstal cvd synthetic diamond material
US61/576,465 2011-12-16
GB1121642.1 2011-12-16
PCT/EP2012/075237 WO2013087697A1 (en) 2011-12-16 2012-12-12 Single crystal cvd synthetic diamond material

Publications (2)

Publication Number Publication Date
CN104185697A CN104185697A (zh) 2014-12-03
CN104185697B true CN104185697B (zh) 2017-03-15

Family

ID=45560552

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280068219.4A Active CN104185697B (zh) 2011-12-16 2012-12-12 单晶cvd合成金刚石材料

Country Status (10)

Country Link
US (1) US9260797B2 (https=)
EP (1) EP2791399B8 (https=)
JP (1) JP5786214B2 (https=)
CN (1) CN104185697B (https=)
CA (1) CA2858965C (https=)
GB (2) GB201121642D0 (https=)
IL (1) IL233038A (https=)
MY (1) MY174359A (https=)
SG (1) SG11201403256TA (https=)
WO (1) WO2013087697A1 (https=)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201320304D0 (en) 2013-11-18 2014-01-01 Element Six Ltd Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said
US9817081B2 (en) 2016-01-21 2017-11-14 Lockheed Martin Corporation Magnetometer with light pipe
US9910105B2 (en) 2014-03-20 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US9541610B2 (en) 2015-02-04 2017-01-10 Lockheed Martin Corporation Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
US9557391B2 (en) 2015-01-23 2017-01-31 Lockheed Martin Corporation Apparatus and method for high sensitivity magnetometry measurement and signal processing in a magnetic detection system
US9853837B2 (en) 2014-04-07 2017-12-26 Lockheed Martin Corporation High bit-rate magnetic communication
US9823313B2 (en) 2016-01-21 2017-11-21 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with circuitry on diamond
US10168393B2 (en) 2014-09-25 2019-01-01 Lockheed Martin Corporation Micro-vacancy center device
US9614589B1 (en) 2015-12-01 2017-04-04 Lockheed Martin Corporation Communication via a magnio
US9638821B2 (en) 2014-03-20 2017-05-02 Lockheed Martin Corporation Mapping and monitoring of hydraulic fractures using vector magnetometers
US9910104B2 (en) 2015-01-23 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US10012704B2 (en) 2015-11-04 2018-07-03 Lockheed Martin Corporation Magnetic low-pass filter
US9835693B2 (en) 2016-01-21 2017-12-05 Lockheed Martin Corporation Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control
CA2945016A1 (en) 2014-04-07 2015-10-15 Lockheed Martin Corporation Energy efficient controlled magnetic field generator circuit
WO2016010028A1 (ja) * 2014-07-15 2016-01-21 住友電気工業株式会社 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具
BR112017016261A2 (pt) 2015-01-28 2018-03-27 Lockheed Martin Corporation carga de energia in situ
WO2016190909A2 (en) 2015-01-28 2016-12-01 Lockheed Martin Corporation Magnetic navigation methods and systems utilizing power grid and communication network
GB2550809A (en) * 2015-02-04 2017-11-29 Lockheed Corp Apparatus and method for estimating absolute axes' orientations for a magnetic detection system
TW201641420A (zh) * 2015-03-09 2016-12-01 二A科技有限公司 單晶鑽石及其成長方法
GB2540537A (en) * 2015-07-03 2017-01-25 Univ Oxford Innovation Ltd Crystal defects
CN107109691B (zh) * 2015-07-22 2021-05-25 住友电气工业株式会社 单晶金刚石材料、单晶金刚石芯片和穿孔工具
CN105021288A (zh) * 2015-08-05 2015-11-04 浙江大学 一种用于热丝化学气相沉积衬底表面温度测量的装置
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
WO2017087014A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for hypersensitivity detection of magnetic field
GB2560283A (en) 2015-11-20 2018-09-05 Lockheed Corp Apparatus and method for closed loop processing for a magnetic detection system
GB201522650D0 (en) 2015-12-22 2016-02-03 Element Six Technologies Ltd Nitrogen containing single crystal diamond materials optimized for magnetometr applications
WO2017123261A1 (en) 2016-01-12 2017-07-20 Lockheed Martin Corporation Defect detector for conductive materials
GB2562958A (en) 2016-01-21 2018-11-28 Lockheed Corp Magnetometer with a light emitting diode
WO2017127079A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Ac vector magnetic anomaly detection with diamond nitrogen vacancies
GB2562193B (en) 2016-01-21 2021-12-22 Lockheed Corp Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
WO2017127096A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with dual rf sources
WO2017127098A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensed ferro-fluid hydrophone
US10274550B2 (en) 2017-03-24 2019-04-30 Lockheed Martin Corporation High speed sequential cancellation for pulsed mode
US10677953B2 (en) 2016-05-31 2020-06-09 Lockheed Martin Corporation Magneto-optical detecting apparatus and methods
US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
US10371765B2 (en) 2016-07-11 2019-08-06 Lockheed Martin Corporation Geolocation of magnetic sources using vector magnetometer sensors
US10359479B2 (en) 2017-02-20 2019-07-23 Lockheed Martin Corporation Efficient thermal drift compensation in DNV vector magnetometry
US10281550B2 (en) 2016-11-14 2019-05-07 Lockheed Martin Corporation Spin relaxometry based molecular sequencing
US10338163B2 (en) 2016-07-11 2019-07-02 Lockheed Martin Corporation Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation
US10345395B2 (en) 2016-12-12 2019-07-09 Lockheed Martin Corporation Vector magnetometry localization of subsurface liquids
US10408890B2 (en) 2017-03-24 2019-09-10 Lockheed Martin Corporation Pulsed RF methods for optimization of CW measurements
US10228429B2 (en) 2017-03-24 2019-03-12 Lockheed Martin Corporation Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing
US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10345396B2 (en) 2016-05-31 2019-07-09 Lockheed Martin Corporation Selected volume continuous illumination magnetometer
US10317279B2 (en) 2016-05-31 2019-06-11 Lockheed Martin Corporation Optical filtration system for diamond material with nitrogen vacancy centers
US10330744B2 (en) 2017-03-24 2019-06-25 Lockheed Martin Corporation Magnetometer with a waveguide
US10571530B2 (en) 2016-05-31 2020-02-25 Lockheed Martin Corporation Buoy array of magnetometers
CN106498363B (zh) * 2016-09-30 2019-06-14 浙江工业大学 具有SiV发光的超小晶粒尺寸纳米金刚石薄膜及其制备
GB201620415D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
US10371760B2 (en) 2017-03-24 2019-08-06 Lockheed Martin Corporation Standing-wave radio frequency exciter
US10379174B2 (en) 2017-03-24 2019-08-13 Lockheed Martin Corporation Bias magnet array for magnetometer
US10338164B2 (en) 2017-03-24 2019-07-02 Lockheed Martin Corporation Vacancy center material with highly efficient RF excitation
US10459041B2 (en) 2017-03-24 2019-10-29 Lockheed Martin Corporation Magnetic detection system with highly integrated diamond nitrogen vacancy sensor
JP7158966B2 (ja) * 2018-09-14 2022-10-24 株式会社東芝 ダイヤモンド基板、量子デバイス、量子システム、及び、ダイヤモンド基板の製造方法
WO2020067292A1 (ja) * 2018-09-26 2020-04-02 日本ラボグロウンダイヤモンド株式会社 多色ダイヤモンド及びその製造方法
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
JP2021080153A (ja) * 2019-11-18 2021-05-27 信越化学工業株式会社 ダイヤモンド基板及びその製造方法
US11753740B2 (en) 2019-11-18 2023-09-12 Shin-Etsu Chemical Co., Ltd. Diamond substrate and method for manufacturing the same
IL293193B1 (en) * 2019-12-08 2026-04-01 Plasmability Llc Method for growing single crystal diamond with the aid of polycrystalline diamond growth
CN111584382B (zh) * 2020-04-27 2023-02-24 哈尔滨工业大学 利用金刚石nv色心原位表征异质界面状态的方法
US12546690B2 (en) * 2021-03-31 2026-02-10 The Research Foundation For The State University Of New York Systems and methods for annealing samples
CN113026001B8 (zh) * 2021-05-26 2021-09-14 上海征世科技股份有限公司 一种介稳态控制制备金刚石的方法
GB2618050A (en) 2021-08-24 2023-11-01 Element Six Tech Ltd Raman laser system
GB2614522B (en) 2021-10-19 2024-04-03 Element Six Tech Ltd CVD single crystal diamond
GB2614521A (en) 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond
WO2023063996A1 (en) 2022-04-20 2023-04-20 EllansaLabs Inc. System and method for etching internal surfaces of transparent gemstones with information pertaining to a blockchain
JP7561174B2 (ja) * 2022-12-17 2024-10-03 エレメント シックス リミテッド 半導体部材加工砥石用ダイヤモンド砥粒、および半導体部材加工砥石用ダイヤモンド砥粒の製造方法
JP7479577B1 (ja) * 2022-12-17 2024-05-08 株式会社ディスコ 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法
WO2024138229A1 (en) * 2022-12-23 2024-06-27 Great Lakes Crystal Technologies, Inc. Variable-temperature vapor deposition process
CN115825017B (zh) * 2022-12-26 2024-07-30 航天科工(长沙)新材料研究院有限公司 测试金刚石生长设备真空漏率的方法、装置和计算机设备
JP7382692B1 (ja) 2023-03-08 2023-11-17 株式会社ディスコ デトネーションダイヤモンド含有単結晶質ダイヤモンド、デトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子、およびデトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子の製造方法
US20230357024A1 (en) * 2023-03-15 2023-11-09 EllansaLabs Inc. Diamonds having artificially embedded inclusions
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
CN118754296B (zh) * 2024-09-05 2024-12-24 浙江正境环保科技有限公司 一种用于污水处理的硝化池生化冷却方法及系统
CN119230628B (zh) * 2024-09-25 2025-12-09 哈尔滨工业大学 利用金刚石固态量子自旋探测宽谱紫外光的方法及紫外电探测器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1441860A (zh) * 2000-06-15 2003-09-10 六号元素(控股)公司 通过cvd制备的单晶金刚石
CN1612956A (zh) * 2001-12-14 2005-05-04 六号元素有限公司 着色的金刚石
CN101443476A (zh) * 2005-12-09 2009-05-27 六号元素技术（控股）公司 高结晶品质的合成金刚石
WO2010149777A1 (en) * 2009-06-26 2010-12-29 Element Six Limited Method for making fancy orange coloured single crystal cvd diamond and product obtained
WO2011151415A2 (en) * 2010-06-03 2011-12-08 Element Six Limited Diamond tools

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1476313A (en) * 1973-06-07 1977-06-10 Nat Res Dev Growth of synthetic diamonds
US6162412A (en) 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
JP3484749B2 (ja) 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
EP1290251B8 (en) 2000-06-15 2006-02-01 Element Six (PTY) Ltd Thick single crystal diamond layer method for making it and gemstones produced from the layer
UA81614C2 (ru) 2001-11-07 2008-01-25 Карнеги Инститьюшн Ов Вашингтон Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты)
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
RU2328563C2 (ru) 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US7115241B2 (en) 2003-07-14 2006-10-03 Carnegie Institution Of Washington Ultrahard diamonds and method of making thereof
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
WO2006048957A1 (ja) * 2004-11-05 2006-05-11 Sumitomo Electric Industries, Ltd. 単結晶ダイヤモンド
KR20080044206A (ko) 2005-05-25 2008-05-20 카네기 인스티튜션 오브 워싱턴 신속한 성장 속도의 무색 단결정 ｃｖｄ 다이아몬드
TWI410538B (zh) 2005-11-15 2013-10-01 Carnegie Inst Of Washington 建基於以快速生長速率製造之單晶ｃｖｄ鑽石的新穎鑽石的用途／應用
US9133566B2 (en) 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
JP5284575B2 (ja) 2006-10-31 2013-09-11 住友電気工業株式会社 ダイヤモンド単結晶及びその製造方法
JP4869196B2 (ja) 2007-09-20 2012-02-08 京セラ株式会社 回転式拡散装置および光電変換装置の製造方法
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
AU2009324921A1 (en) 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal CVD diamond rapid growth rate
GB2476478A (en) * 2009-12-22 2011-06-29 Element Six Ltd Chemical vapour deposition diamond synthesis
US10273598B2 (en) 2009-12-22 2019-04-30 Element Six Technologies Limited Synthetic CVD diamond
GB201021913D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201108644D0 (en) * 2011-05-24 2011-07-06 Element Six Ltd Diamond sensors, detectors, and quantum devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1441860A (zh) * 2000-06-15 2003-09-10 六号元素(控股)公司 通过cvd制备的单晶金刚石
CN1612956A (zh) * 2001-12-14 2005-05-04 六号元素有限公司 着色的金刚石
CN101443476A (zh) * 2005-12-09 2009-05-27 六号元素技术（控股）公司 高结晶品质的合成金刚石
WO2010149777A1 (en) * 2009-06-26 2010-12-29 Element Six Limited Method for making fancy orange coloured single crystal cvd diamond and product obtained
WO2011151415A2 (en) * 2010-06-03 2011-12-08 Element Six Limited Diamond tools

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Chemical vapour deposition synthetic diamond: materials,technology and applications;R S Balmer,et al.;《JOURNAL OF PHYSICS CONDENSED MATTER》;20090831;第21卷(第36期);第364221-（1-51）页 *

Also Published As

Publication number Publication date
JP2015505810A (ja) 2015-02-26
GB2497660A (en) 2013-06-19
WO2013087697A1 (en) 2013-06-20
GB201222318D0 (en) 2013-01-23
SG11201403256TA (en) 2014-07-30
CA2858965C (en) 2016-04-26
IL233038A (en) 2017-05-29
EP2791399B1 (en) 2017-03-29
EP2791399B8 (en) 2017-06-07
IL233038A0 (en) 2014-07-31
GB201121642D0 (en) 2012-01-25
US9260797B2 (en) 2016-02-16
JP5786214B2 (ja) 2015-09-30
HK1204348A1 (en) 2015-11-13
GB2497660B (en) 2014-08-06
MY174359A (en) 2020-04-10
CA2858965A1 (en) 2013-06-20
EP2791399A1 (en) 2014-10-22
US20140335339A1 (en) 2014-11-13
CN104185697A (zh) 2014-12-03

Similar Documents

Publication Publication Date Title
CN104185697B (zh) 单晶cvd合成金刚石材料
US7883684B2 (en) Colorless single-crystal CVD diamond at rapid growth rate
Achard et al. The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD
EP3071728B1 (en) Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said methods
US7820131B2 (en) Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
CN1321227C (zh) 硼掺杂的金刚石
US11643750B2 (en) Method of manufacture of single crystal synthetic diamond material
CN121519022A (zh) 金刚石衬底及其制造方法
Yao et al. Diamond films and particles growth in hydrogen microwave plasma with graphite solid precursor: Optical emission spectroscopy study
Wiora et al. Synthesis of nanodiamond
Li et al. Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films
RU2575205C1 (ru) Монокристаллический, полученный хогф, синтетический алмазный материал
Afif et al. Growth and characterization of large single crystal diamond grown by MPCVD with varying methane concentration
HK1204348B (en) Single crystal cvd synthetic diamond material
EP4394091A1 (en) Semiconductor heat treatment member
Chen Diamond Chemical Vapor Deposition and Practical Applications
Wang et al. Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique
Nicolas et al. Single Crystal CVD Diamond growth and characterizations
HK1120781A (en) Colorless single-crystal cvd diamond at rapid growth rate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant