MXPA01002751A - Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales. - Google Patents
Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales.Info
- Publication number
- MXPA01002751A MXPA01002751A MXPA01002751A MXPA01002751A MXPA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A
- Authority
- MX
- Mexico
- Prior art keywords
- substrate
- silicon carbide
- semiconductor device
- further characterized
- implanted
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 117
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 77
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 76
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000137 annealing Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 24
- 150000002500 ions Chemical class 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- -1 nitrogen ions Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 210000003660 reticulum Anatomy 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10054698P | 1998-09-16 | 1998-09-16 | |
| PCT/US1999/021475 WO2000016382A1 (en) | 1998-09-16 | 1999-09-16 | Low temperature formation of backside ohmic contacts for vertical devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA01002751A true MXPA01002751A (es) | 2002-04-08 |
Family
ID=22280313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MXPA01002751A MXPA01002751A (es) | 1998-09-16 | 1999-09-16 | Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales. |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1125320A1 (enExample) |
| JP (2) | JP4785249B2 (enExample) |
| KR (1) | KR100694681B1 (enExample) |
| CN (1) | CN1178277C (enExample) |
| AU (1) | AU6391699A (enExample) |
| CA (1) | CA2343416A1 (enExample) |
| MX (1) | MXPA01002751A (enExample) |
| TW (1) | TW449932B (enExample) |
| WO (1) | WO2000016382A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6884644B1 (en) | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6909119B2 (en) | 2001-03-15 | 2005-06-21 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US7138291B2 (en) * | 2003-01-30 | 2006-11-21 | Cree, Inc. | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
| US7262434B2 (en) * | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
| US7473929B2 (en) | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
| JP2006086361A (ja) * | 2004-09-16 | 2006-03-30 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
| EP1933386B1 (en) * | 2005-09-14 | 2012-11-07 | Central Research Institute of Electric Power Industry | Process for producing silicon carbide semiconductor device |
| WO2009157299A1 (ja) * | 2008-06-26 | 2009-12-30 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
| KR101220407B1 (ko) | 2010-12-14 | 2013-01-21 | (재)한국나노기술원 | 반도체 발광 소자 |
| JP5811829B2 (ja) | 2011-12-22 | 2015-11-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP5742712B2 (ja) | 2011-12-29 | 2015-07-01 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6253133B2 (ja) * | 2012-04-27 | 2017-12-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| US9496366B2 (en) | 2013-10-08 | 2016-11-15 | Shindengen Electric Manufacturing Co., Ltd. | Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film |
| JP7135443B2 (ja) * | 2018-05-29 | 2022-09-13 | 富士電機株式会社 | 炭化ケイ素半導体装置及びその製造方法 |
| CN115148601A (zh) * | 2021-03-30 | 2022-10-04 | 无锡华润华晶微电子有限公司 | 半导体结构及其制备方法 |
| EP4071786B1 (en) * | 2021-04-06 | 2025-11-05 | Hitachi Energy Ltd | Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| JP3303530B2 (ja) * | 1994-06-23 | 2002-07-22 | 富士電機株式会社 | 炭化けい素半導体素子の製造方法 |
| JPH08139053A (ja) * | 1994-11-04 | 1996-05-31 | New Japan Radio Co Ltd | ＳｉＣへの電極の形成方法 |
| JP3333896B2 (ja) * | 1995-09-13 | 2002-10-15 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| WO1998037584A1 (en) * | 1997-02-20 | 1998-08-27 | The Board Of Trustees Of The University Of Illinois | Solid state power-control device using group iii nitrides |
-
1999
- 1999-09-16 EP EP99951484A patent/EP1125320A1/en not_active Ceased
- 1999-09-16 KR KR1020017002942A patent/KR100694681B1/ko not_active Expired - Lifetime
- 1999-09-16 AU AU63916/99A patent/AU6391699A/en not_active Abandoned
- 1999-09-16 CA CA002343416A patent/CA2343416A1/en not_active Abandoned
- 1999-09-16 MX MXPA01002751A patent/MXPA01002751A/es active IP Right Grant
- 1999-09-16 TW TW088116007A patent/TW449932B/zh not_active IP Right Cessation
- 1999-09-16 CN CNB998120219A patent/CN1178277C/zh not_active Expired - Lifetime
- 1999-09-16 JP JP2000570823A patent/JP4785249B2/ja not_active Expired - Lifetime
- 1999-09-16 WO PCT/US1999/021475 patent/WO2000016382A1/en not_active Ceased
-
2011
- 2011-05-13 JP JP2011108544A patent/JP2011151428A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010079759A (ko) | 2001-08-22 |
| WO2000016382A1 (en) | 2000-03-23 |
| AU6391699A (en) | 2000-04-03 |
| CN1178277C (zh) | 2004-12-01 |
| JP4785249B2 (ja) | 2011-10-05 |
| CA2343416A1 (en) | 2000-03-23 |
| EP1125320A1 (en) | 2001-08-22 |
| KR100694681B1 (ko) | 2007-03-13 |
| TW449932B (en) | 2001-08-11 |
| JP2011151428A (ja) | 2011-08-04 |
| CN1323446A (zh) | 2001-11-21 |
| JP2002525849A (ja) | 2002-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |