MXPA01002751A - Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales. - Google Patents

Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales.

Info

Publication number
MXPA01002751A
MXPA01002751A MXPA01002751A MXPA01002751A MXPA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A MX PA01002751 A MXPA01002751 A MX PA01002751A
Authority
MX
Mexico
Prior art keywords
substrate
silicon carbide
semiconductor device
further characterized
implanted
Prior art date
Application number
MXPA01002751A
Other languages
English (en)
Spanish (es)
Inventor
David B Slater Jr
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of MXPA01002751A publication Critical patent/MXPA01002751A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
MXPA01002751A 1998-09-16 1999-09-16 Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales. MXPA01002751A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16
PCT/US1999/021475 WO2000016382A1 (en) 1998-09-16 1999-09-16 Low temperature formation of backside ohmic contacts for vertical devices

Publications (1)

Publication Number Publication Date
MXPA01002751A true MXPA01002751A (es) 2002-04-08

Family

ID=22280313

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA01002751A MXPA01002751A (es) 1998-09-16 1999-09-16 Formacion a baja temperatura de contactos ohmicos dorsales para dispositivos verticales.

Country Status (9)

Country Link
EP (1) EP1125320A1 (enExample)
JP (2) JP4785249B2 (enExample)
KR (1) KR100694681B1 (enExample)
CN (1) CN1178277C (enExample)
AU (1) AU6391699A (enExample)
CA (1) CA2343416A1 (enExample)
MX (1) MXPA01002751A (enExample)
TW (1) TW449932B (enExample)
WO (1) WO2000016382A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
EP2905806B1 (en) 2013-10-08 2016-08-24 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing a silicon carbide semiconductor device.
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device
US12211920B2 (en) * 2021-04-13 2025-01-28 Semiconductor Components Industries, Llc Backside ohmic contacts for semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3333896B2 (ja) * 1995-09-13 2002-10-15 富士電機株式会社 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Also Published As

Publication number Publication date
EP1125320A1 (en) 2001-08-22
CN1178277C (zh) 2004-12-01
JP2002525849A (ja) 2002-08-13
JP2011151428A (ja) 2011-08-04
JP4785249B2 (ja) 2011-10-05
AU6391699A (en) 2000-04-03
TW449932B (en) 2001-08-11
KR20010079759A (ko) 2001-08-22
WO2000016382A1 (en) 2000-03-23
CN1323446A (zh) 2001-11-21
KR100694681B1 (ko) 2007-03-13
CA2343416A1 (en) 2000-03-23

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