JP4785249B2 - 縦型デバイスのための裏面オーミックコンタクトの低温形成 - Google Patents

縦型デバイスのための裏面オーミックコンタクトの低温形成 Download PDF

Info

Publication number
JP4785249B2
JP4785249B2 JP2000570823A JP2000570823A JP4785249B2 JP 4785249 B2 JP4785249 B2 JP 4785249B2 JP 2000570823 A JP2000570823 A JP 2000570823A JP 2000570823 A JP2000570823 A JP 2000570823A JP 4785249 B2 JP4785249 B2 JP 4785249B2
Authority
JP
Japan
Prior art keywords
substrate
dopant
implanted
silicon carbide
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000570823A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002525849A5 (enExample
JP2002525849A (ja
Inventor
スレイター，デーヴィッド・ビー，ジュニアー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2002525849A publication Critical patent/JP2002525849A/ja
Publication of JP2002525849A5 publication Critical patent/JP2002525849A5/ja
Application granted granted Critical
Publication of JP4785249B2 publication Critical patent/JP4785249B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP2000570823A 1998-09-16 1999-09-16 縦型デバイスのための裏面オーミックコンタクトの低温形成 Expired - Lifetime JP4785249B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16
US60/100,546 1998-09-16
PCT/US1999/021475 WO2000016382A1 (en) 1998-09-16 1999-09-16 Low temperature formation of backside ohmic contacts for vertical devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011108544A Division JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

Publications (3)

Publication Number Publication Date
JP2002525849A JP2002525849A (ja) 2002-08-13
JP2002525849A5 JP2002525849A5 (enExample) 2005-12-22
JP4785249B2 true JP4785249B2 (ja) 2011-10-05

Family

ID=22280313

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000570823A Expired - Lifetime JP4785249B2 (ja) 1998-09-16 1999-09-16 縦型デバイスのための裏面オーミックコンタクトの低温形成
JP2011108544A Pending JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011108544A Pending JP2011151428A (ja) 1998-09-16 2011-05-13 裏面オーミックコンタクトを備えた縦型の半導体デバイス

Country Status (9)

Country Link
EP (1) EP1125320A1 (enExample)
JP (2) JP4785249B2 (enExample)
KR (1) KR100694681B1 (enExample)
CN (1) CN1178277C (enExample)
AU (1) AU6391699A (enExample)
CA (1) CA2343416A1 (enExample)
MX (1) MXPA01002751A (enExample)
TW (1) TW449932B (enExample)
WO (1) WO2000016382A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
US9496366B2 (en) 2013-10-08 2016-11-15 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3333896B2 (ja) * 1995-09-13 2002-10-15 富士電機株式会社 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Also Published As

Publication number Publication date
KR20010079759A (ko) 2001-08-22
WO2000016382A1 (en) 2000-03-23
AU6391699A (en) 2000-04-03
CN1178277C (zh) 2004-12-01
CA2343416A1 (en) 2000-03-23
MXPA01002751A (es) 2002-04-08
EP1125320A1 (en) 2001-08-22
KR100694681B1 (ko) 2007-03-13
TW449932B (en) 2001-08-11
JP2011151428A (ja) 2011-08-04
CN1323446A (zh) 2001-11-21
JP2002525849A (ja) 2002-08-13

Similar Documents

Publication Publication Date Title
JP4660733B2 (ja) 縦型デバイスのための裏面オーミックコンタクトの低温形成
JP2011151428A (ja) 裏面オーミックコンタクトを備えた縦型の半導体デバイス
US6884644B1 (en) Low temperature formation of backside ohmic contacts for vertical devices
US7919791B2 (en) Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US6909119B2 (en) Low temperature formation of backside ohmic contacts for vertical devices
US7675068B2 (en) Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
JP5164319B2 (ja) 半導体素子のための非活性化保護リング
JP4852786B2 (ja) Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体素子
JP2004356257A (ja) ｐ型ＩＩＩ族窒化物半導体の製造方法
US11502174B2 (en) Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height
EP1488450B1 (en) Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
JP4029466B2 (ja) 炭化けい素半導体素子の製造方法
TWI281710B (en) Low temperature formation of backside ohmic contacts for vertical devices
Fukada et al. Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films
KR20170044478A (ko) 활성화 열처리 공정을 통한 탄화규소 다이오드 제조방법
WO1997015072A1 (en) A method for producing a semiconductor device comprising an implantation step

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040729

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040729

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060901

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080212

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080509

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080812

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081002

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090203

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090324

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090515

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110106

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110112

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110207

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110513

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110712

R150 Certificate of patent or registration of utility model

Ref document number: 4785249

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140722

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term