AU6391699A - Low temperature formation of backside ohmic contacts for vertical devices - Google Patents
Low temperature formation of backside ohmic contacts for vertical devicesInfo
- Publication number
- AU6391699A AU6391699A AU63916/99A AU6391699A AU6391699A AU 6391699 A AU6391699 A AU 6391699A AU 63916/99 A AU63916/99 A AU 63916/99A AU 6391699 A AU6391699 A AU 6391699A AU 6391699 A AU6391699 A AU 6391699A
- Authority
- AU
- Australia
- Prior art keywords
- low temperature
- ohmic contacts
- vertical devices
- temperature formation
- backside ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10054698P | 1998-09-16 | 1998-09-16 | |
| US60100546 | 1998-09-16 | ||
| PCT/US1999/021475 WO2000016382A1 (en) | 1998-09-16 | 1999-09-16 | Low temperature formation of backside ohmic contacts for vertical devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU6391699A true AU6391699A (en) | 2000-04-03 |
Family
ID=22280313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU63916/99A Abandoned AU6391699A (en) | 1998-09-16 | 1999-09-16 | Low temperature formation of backside ohmic contacts for vertical devices |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1125320A1 (enExample) |
| JP (2) | JP4785249B2 (enExample) |
| KR (1) | KR100694681B1 (enExample) |
| CN (1) | CN1178277C (enExample) |
| AU (1) | AU6391699A (enExample) |
| CA (1) | CA2343416A1 (enExample) |
| MX (1) | MXPA01002751A (enExample) |
| TW (1) | TW449932B (enExample) |
| WO (1) | WO2000016382A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6884644B1 (en) | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6909119B2 (en) | 2001-03-15 | 2005-06-21 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US7138291B2 (en) | 2003-01-30 | 2006-11-21 | Cree, Inc. | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
| US7262434B2 (en) * | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
| US7473929B2 (en) | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
| JP2006086361A (ja) * | 2004-09-16 | 2006-03-30 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
| EP1933386B1 (en) * | 2005-09-14 | 2012-11-07 | Central Research Institute of Electric Power Industry | Process for producing silicon carbide semiconductor device |
| US20100237385A1 (en) * | 2008-06-26 | 2010-09-23 | Sanken Electric Co., Ltd. | Semiconductor device and method of fabricating the same |
| KR101220407B1 (ko) | 2010-12-14 | 2013-01-21 | (재)한국나노기술원 | 반도체 발광 소자 |
| JP5811829B2 (ja) | 2011-12-22 | 2015-11-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP5742712B2 (ja) | 2011-12-29 | 2015-07-01 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6253133B2 (ja) * | 2012-04-27 | 2017-12-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5681835B1 (ja) | 2013-10-08 | 2015-03-11 | 新電元工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP7135443B2 (ja) * | 2018-05-29 | 2022-09-13 | 富士電機株式会社 | 炭化ケイ素半導体装置及びその製造方法 |
| CN115148601A (zh) * | 2021-03-30 | 2022-10-04 | 无锡华润华晶微电子有限公司 | 半导体结构及其制备方法 |
| EP4071786B1 (en) * | 2021-04-06 | 2025-11-05 | Hitachi Energy Ltd | Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| JP3303530B2 (ja) * | 1994-06-23 | 2002-07-22 | 富士電機株式会社 | 炭化けい素半導体素子の製造方法 |
| JPH08139053A (ja) * | 1994-11-04 | 1996-05-31 | New Japan Radio Co Ltd | ＳｉＣへの電極の形成方法 |
| JP3333896B2 (ja) * | 1995-09-13 | 2002-10-15 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| WO1998037584A1 (en) * | 1997-02-20 | 1998-08-27 | The Board Of Trustees Of The University Of Illinois | Solid state power-control device using group iii nitrides |
-
1999
- 1999-09-16 CN CNB998120219A patent/CN1178277C/zh not_active Expired - Lifetime
- 1999-09-16 WO PCT/US1999/021475 patent/WO2000016382A1/en not_active Ceased
- 1999-09-16 EP EP99951484A patent/EP1125320A1/en not_active Ceased
- 1999-09-16 KR KR1020017002942A patent/KR100694681B1/ko not_active Expired - Lifetime
- 1999-09-16 MX MXPA01002751A patent/MXPA01002751A/es active IP Right Grant
- 1999-09-16 CA CA002343416A patent/CA2343416A1/en not_active Abandoned
- 1999-09-16 JP JP2000570823A patent/JP4785249B2/ja not_active Expired - Lifetime
- 1999-09-16 AU AU63916/99A patent/AU6391699A/en not_active Abandoned
- 1999-09-16 TW TW088116007A patent/TW449932B/zh not_active IP Right Cessation
-
2011
- 2011-05-13 JP JP2011108544A patent/JP2011151428A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1178277C (zh) | 2004-12-01 |
| JP4785249B2 (ja) | 2011-10-05 |
| KR100694681B1 (ko) | 2007-03-13 |
| MXPA01002751A (es) | 2002-04-08 |
| TW449932B (en) | 2001-08-11 |
| JP2002525849A (ja) | 2002-08-13 |
| KR20010079759A (ko) | 2001-08-22 |
| CA2343416A1 (en) | 2000-03-23 |
| JP2011151428A (ja) | 2011-08-04 |
| EP1125320A1 (en) | 2001-08-22 |
| CN1323446A (zh) | 2001-11-21 |
| WO2000016382A1 (en) | 2000-03-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |