CN1178277C - 立式器件中背面欧姆触点的低温形成方法 - Google Patents

立式器件中背面欧姆触点的低温形成方法 Download PDF

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Publication number
CN1178277C
CN1178277C CNB998120219A CN99812021A CN1178277C CN 1178277 C CN1178277 C CN 1178277C CN B998120219 A CNB998120219 A CN B998120219A CN 99812021 A CN99812021 A CN 99812021A CN 1178277 C CN1178277 C CN 1178277C
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China
Prior art keywords
substrate
silicon carbide
implanted
semiconductor device
carrier concentration
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Expired - Lifetime
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CNB998120219A
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English (en)
Chinese (zh)
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CN1323446A (zh
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С��ά��B��˹����
小戴维·B·斯拉特
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Wolfspeed Inc
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Cree Research Inc
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Publication of CN1323446A publication Critical patent/CN1323446A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
CNB998120219A 1998-09-16 1999-09-16 立式器件中背面欧姆触点的低温形成方法 Expired - Lifetime CN1178277C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16
US60/100,546 1998-09-16

Publications (2)

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CN1323446A CN1323446A (zh) 2001-11-21
CN1178277C true CN1178277C (zh) 2004-12-01

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CNB998120219A Expired - Lifetime CN1178277C (zh) 1998-09-16 1999-09-16 立式器件中背面欧姆触点的低温形成方法

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Country Link
EP (1) EP1125320A1 (enExample)
JP (2) JP4785249B2 (enExample)
KR (1) KR100694681B1 (enExample)
CN (1) CN1178277C (enExample)
AU (1) AU6391699A (enExample)
CA (1) CA2343416A1 (enExample)
MX (1) MXPA01002751A (enExample)
TW (1) TW449932B (enExample)
WO (1) WO2000016382A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
US9496366B2 (en) 2013-10-08 2016-11-15 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法
JP3333896B2 (ja) * 1995-09-13 2002-10-15 富士電機株式会社 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Also Published As

Publication number Publication date
KR20010079759A (ko) 2001-08-22
WO2000016382A1 (en) 2000-03-23
AU6391699A (en) 2000-04-03
JP4785249B2 (ja) 2011-10-05
CA2343416A1 (en) 2000-03-23
MXPA01002751A (es) 2002-04-08
EP1125320A1 (en) 2001-08-22
KR100694681B1 (ko) 2007-03-13
TW449932B (en) 2001-08-11
JP2011151428A (ja) 2011-08-04
CN1323446A (zh) 2001-11-21
JP2002525849A (ja) 2002-08-13

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