KR100694681B1 - 수직형 소자용 후면 옴 접촉부의 저온 형성 방법 - Google Patents

수직형 소자용 후면 옴 접촉부의 저온 형성 방법 Download PDF

Info

Publication number
KR100694681B1
KR100694681B1 KR1020017002942A KR20017002942A KR100694681B1 KR 100694681 B1 KR100694681 B1 KR 100694681B1 KR 1020017002942 A KR1020017002942 A KR 1020017002942A KR 20017002942 A KR20017002942 A KR 20017002942A KR 100694681 B1 KR100694681 B1 KR 100694681B1
Authority
KR
South Korea
Prior art keywords
silicon carbide
substrate
carrier concentration
impurity
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017002942A
Other languages
English (en)
Korean (ko)
Other versions
KR20010079759A (ko
Inventor
슬레이터데이비드비.주니어.
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20010079759A publication Critical patent/KR20010079759A/ko
Application granted granted Critical
Publication of KR100694681B1 publication Critical patent/KR100694681B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
KR1020017002942A 1998-09-16 1999-09-16 수직형 소자용 후면 옴 접촉부의 저온 형성 방법 Expired - Lifetime KR100694681B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10054698P 1998-09-16 1998-09-16
US60/100,546 1998-09-16

Publications (2)

Publication Number Publication Date
KR20010079759A KR20010079759A (ko) 2001-08-22
KR100694681B1 true KR100694681B1 (ko) 2007-03-13

Family

ID=22280313

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017002942A Expired - Lifetime KR100694681B1 (ko) 1998-09-16 1999-09-16 수직형 소자용 후면 옴 접촉부의 저온 형성 방법

Country Status (9)

Country Link
EP (1) EP1125320A1 (enExample)
JP (2) JP4785249B2 (enExample)
KR (1) KR100694681B1 (enExample)
CN (1) CN1178277C (enExample)
AU (1) AU6391699A (enExample)
CA (1) CA2343416A1 (enExample)
MX (1) MXPA01002751A (enExample)
TW (1) TW449932B (enExample)
WO (1) WO2000016382A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6909119B2 (en) 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7473929B2 (en) 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2006086361A (ja) * 2004-09-16 2006-03-30 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
WO2009157299A1 (ja) * 2008-06-26 2009-12-30 サンケン電気株式会社 半導体装置及びその製造方法
KR101220407B1 (ko) 2010-12-14 2013-01-21 (재)한국나노기술원 반도체 발광 소자
JP5811829B2 (ja) 2011-12-22 2015-11-11 住友電気工業株式会社 半導体装置の製造方法
JP5742712B2 (ja) 2011-12-29 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
US9496366B2 (en) 2013-10-08 2016-11-15 Shindengen Electric Manufacturing Co., Ltd. Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
JP7135443B2 (ja) * 2018-05-29 2022-09-13 富士電機株式会社 炭化ケイ素半導体装置及びその製造方法
CN115148601A (zh) * 2021-03-30 2022-10-04 无锡华润华晶微电子有限公司 半导体结构及其制备方法
EP4071786B1 (en) * 2021-04-06 2025-11-05 Hitachi Energy Ltd Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982663A (ja) * 1995-09-13 1997-03-28 Fuji Electric Co Ltd 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3303530B2 (ja) * 1994-06-23 2002-07-22 富士電機株式会社 炭化けい素半導体素子の製造方法
JPH08139053A (ja) * 1994-11-04 1996-05-31 New Japan Radio Co Ltd ＳｉＣへの電極の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982663A (ja) * 1995-09-13 1997-03-28 Fuji Electric Co Ltd 炭化珪素半導体装置の製造方法
WO1998037584A1 (en) * 1997-02-20 1998-08-27 The Board Of Trustees Of The University Of Illinois Solid state power-control device using group iii nitrides

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
Diamond and Related Materials 6(1997) 1414~1419 *
Diamond and Related Materials 6(1997) 1414~1419 *
Material Science and Engineering B29 (1995) 185~18*
Material Science and Engineering B29 (1995) 185~189 *
Proceedings of the International Electron Devices
Proceedings of the International Electron Devices Meeting, US, New York, IEEE, 1993, 691-694 *
국제특허 제98/37584호 *

Also Published As

Publication number Publication date
KR20010079759A (ko) 2001-08-22
WO2000016382A1 (en) 2000-03-23
AU6391699A (en) 2000-04-03
CN1178277C (zh) 2004-12-01
JP4785249B2 (ja) 2011-10-05
CA2343416A1 (en) 2000-03-23
MXPA01002751A (es) 2002-04-08
EP1125320A1 (en) 2001-08-22
TW449932B (en) 2001-08-11
JP2011151428A (ja) 2011-08-04
CN1323446A (zh) 2001-11-21
JP2002525849A (ja) 2002-08-13

Similar Documents

Publication Publication Date Title
US6803243B2 (en) Low temperature formation of backside ohmic contacts for vertical devices
KR100694681B1 (ko) 수직형 소자용 후면 옴 접촉부의 저온 형성 방법
US6884644B1 (en) Low temperature formation of backside ohmic contacts for vertical devices
EP0889509B1 (en) Lifetime control for semiconductor devices
EP0659298B1 (en) Ohmic contact structure between platinum and silicon carbide
US6096627A (en) Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
US6909119B2 (en) Low temperature formation of backside ohmic contacts for vertical devices
US4947218A (en) P-N junction diodes in silicon carbide
US5654208A (en) Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
JP5164319B2 (ja) 半導体素子のための非活性化保護リング
US9318331B2 (en) Method and system for diffusion and implantation in gallium nitride based devices
JP4852786B2 (ja) Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体素子
KR0166989B1 (ko) 개선된 반도체 물질 및 그 위에 형성된 장치의 스위칭 속도 제어방법
US20050184296A1 (en) System and method for fabricating diodes
JP4000927B2 (ja) 半導体装置およびその製造方法
US5849620A (en) Method for producing a semiconductor device comprising an implantation step
TWI281710B (en) Low temperature formation of backside ohmic contacts for vertical devices
KR100244078B1 (ko) 백금과 탄화규소 사이의 옴접촉구조
KR20170044478A (ko) 활성화 열처리 공정을 통한 탄화규소 다이오드 제조방법
JPH08288501A (ja) 炭化珪素半導体のｐ−ｎ接合形成方法および炭化珪素半導体素子
WO1997015072A1 (en) A method for producing a semiconductor device comprising an implantation step

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20010307

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040727

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060106

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20061023

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20060106

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20061123

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20061023

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20070109

Appeal identifier: 2006101010354

Request date: 20061123

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20061226

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20061123

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20060508

Patent event code: PB09011R02I

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

Patent event date: 20070109

Comment text: Decision to Grant Registration

Patent event code: PB07012S01D

Patent event date: 20070103

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event code: PB07011S01I

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20070307

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20070308

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20100223

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20110217

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20120222

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20130221

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20130221

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20140221

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20140221

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20150224

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20150224

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20160218

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20160218

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20170220

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20170220

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 12

End annual number: 12

PC1801 Expiration of term

Termination date: 20200316

Termination category: Expiration of duration