AU2001255874A1 - Method for low temperature formation of stable ohmic contacts to silicon carbide - Google Patents

Method for low temperature formation of stable ohmic contacts to silicon carbide

Info

Publication number
AU2001255874A1
AU2001255874A1 AU2001255874A AU5587401A AU2001255874A1 AU 2001255874 A1 AU2001255874 A1 AU 2001255874A1 AU 2001255874 A AU2001255874 A AU 2001255874A AU 5587401 A AU5587401 A AU 5587401A AU 2001255874 A1 AU2001255874 A1 AU 2001255874A1
Authority
AU
Australia
Prior art keywords
low temperature
silicon carbide
ohmic contacts
temperature formation
stable ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001255874A
Inventor
Christopher W. Deeb
Arthur H Heuer
Harold Kahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Case Western Reserve University
Original Assignee
Case Western Reserve University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Case Western Reserve University filed Critical Case Western Reserve University
Publication of AU2001255874A1 publication Critical patent/AU2001255874A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2001255874A 2000-05-02 2001-04-30 Method for low temperature formation of stable ohmic contacts to silicon carbide Abandoned AU2001255874A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20111300P 2000-05-02 2000-05-02
US60201113 2000-05-02
PCT/US2001/040633 WO2001084609A1 (en) 2000-05-02 2001-04-30 Method for low temperature formation of stable ohmic contacts to silicon carbide

Publications (1)

Publication Number Publication Date
AU2001255874A1 true AU2001255874A1 (en) 2001-11-12

Family

ID=22744540

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001255874A Abandoned AU2001255874A1 (en) 2000-05-02 2001-04-30 Method for low temperature formation of stable ohmic contacts to silicon carbide

Country Status (2)

Country Link
AU (1) AU2001255874A1 (en)
WO (1) WO2001084609A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10226976A1 (en) 2002-06-17 2004-03-25 Siemens Ag Electric motor with a multi-pole rotor and a multi-pole stator
DE10248205B4 (en) 2002-10-16 2007-03-08 Infineon Technologies Ag Ohmic contact arrangement and manufacturing method
JP3888330B2 (en) 2003-04-23 2007-02-28 株式会社デンソー Method for manufacturing silicon carbide semiconductor device
US20060006393A1 (en) 2004-07-06 2006-01-12 Ward Allan Iii Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
JP4140648B2 (en) * 2006-11-02 2008-08-27 住友電気工業株式会社 Ohmic electrode for SiC semiconductor, method for producing ohmic electrode for SiC semiconductor, semiconductor device, and method for producing semiconductor device
CN105244267B (en) * 2015-11-05 2018-12-14 株洲南车时代电气股份有限公司 A kind of Ohmic contact method of silicon carbide PiN device
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
CN109979813B (en) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 Preparation method of low-temperature silicon carbide ohmic contact and metal structure
CN113539800B (en) * 2021-06-10 2024-05-31 上海积塔半导体有限公司 Method for preparing semiconductor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085078B2 (en) * 1994-03-04 2000-09-04 富士電機株式会社 Method for manufacturing silicon carbide electronic device
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
JPH0864800A (en) * 1994-08-25 1996-03-08 Hitachi Ltd Silicon carbide semiconductor device

Also Published As

Publication number Publication date
WO2001084609A1 (en) 2001-11-08

Similar Documents

Publication Publication Date Title
SG104924A1 (en) Method to form an l-shaped silicon nitride sidewall spacer
AU2001289109A1 (en) Metal-assisted chemical etch porous silicon formation method
AU2001244643A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001241108A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
AU2001265835A1 (en) Method for stable chromosomal multi-copy integration of genes
AU2001247389A1 (en) Iii-v nitride substrate boule and method of making and using the same
SG84614A1 (en) High selective nitride spacer etch with high ratio of spacer width to deposited nitride thickness
AUPR208000A0 (en) Method of document searching
AU2001297876A1 (en) Metal-assisted chemical etch to produce porous group iii-v materials
AU2637801A (en) Methods of forming semiconductor structures
AU2000266138A1 (en) Method of making elastic articles having improved heat-resistance
AU2001255874A1 (en) Method for low temperature formation of stable ohmic contacts to silicon carbide
AU1801000A (en) Method of manufacturing single-crystal silicon carbide
AU6391699A (en) Low temperature formation of backside ohmic contacts for vertical devices
EP1154048A4 (en) Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
EP1193332A4 (en) Method for producing silicon single crystal
EP1199387A4 (en) Method for growing single crystal of semiconductor
SG109466A1 (en) Method of forming polycrystalline semiconductor film
AU2001275272A1 (en) Formation of self-aligned passivation for interconnect to minimize electromigration
ZA200107478B (en) Machining of polycrystalline diamond.
AU2001245741A1 (en) Antisense inhibition of adam10 expression
AU2002226064A1 (en) Antisense modulation of talin expression
AU2003263226A1 (en) Formation of single-crystal silicon carbide
AU2002228932A1 (en) Maturation of dendritic cells
AU2001294258A1 (en) Method of purifying plavastatin