MX2022000057A - Rechazo de trayectoria secundaria optica y electrica. - Google Patents
Rechazo de trayectoria secundaria optica y electrica.Info
- Publication number
- MX2022000057A MX2022000057A MX2022000057A MX2022000057A MX2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A
- Authority
- MX
- Mexico
- Prior art keywords
- charge carriers
- photons
- optical
- secondary path
- embodiments relate
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 3
- 239000002800 charge carrier Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
- G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
- G01N2021/6441—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks with two or more labels
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/064—Stray light conditioning
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Optical Measuring Cells (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962868829P | 2019-06-28 | 2019-06-28 | |
PCT/US2020/039868 WO2020264331A1 (fr) | 2019-06-28 | 2020-06-26 | Rejet de trajet secondaire optique et électrique |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2022000057A true MX2022000057A (es) | 2022-05-30 |
Family
ID=71738284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2022000057A MX2022000057A (es) | 2019-06-28 | 2020-06-26 | Rechazo de trayectoria secundaria optica y electrica. |
Country Status (12)
Country | Link |
---|---|
US (2) | US11804499B2 (fr) |
EP (1) | EP3973272A1 (fr) |
JP (1) | JP2022539561A (fr) |
KR (1) | KR20220025853A (fr) |
CN (1) | CN114729886A (fr) |
AU (1) | AU2020302737A1 (fr) |
BR (1) | BR112021026534A2 (fr) |
CA (1) | CA3144668A1 (fr) |
IL (1) | IL289263A (fr) |
MX (1) | MX2022000057A (fr) |
TW (1) | TW202107727A (fr) |
WO (1) | WO2020264331A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112020000799A2 (pt) * | 2017-07-24 | 2020-07-14 | Quantum-Si Incorporated | estruturas fotônicas de rejeição óptica |
AU2021207501A1 (en) | 2020-01-14 | 2022-09-08 | Quantum-Si Incorporated | Integrated sensor for lifetime characterization |
KR20220140523A (ko) | 2020-01-14 | 2022-10-18 | 퀀텀-에스아이 인코포레이티드 | 수명 플러스 스펙트럼 특성화를 위한 센서 |
US11719639B2 (en) | 2020-03-02 | 2023-08-08 | Quantum-Si Incorporated | Integrated sensor for multi-dimensional signal analysis |
EP4133524A2 (fr) | 2020-04-08 | 2023-02-15 | Quantum-si Incorporated | Capteur intégré à inclinaison réduite |
KR20230093003A (ko) | 2020-10-22 | 2023-06-26 | 퀀텀-에스아이 인코포레이티드 | 순차적으로 결합된 전하 저장소를 갖는 집적 회로 및 연관된 기술들 |
US20220392932A1 (en) * | 2021-06-03 | 2022-12-08 | Quantum-Si Incorporated | Inter-pixel substrate isolation |
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KR102476411B1 (ko) * | 2016-12-01 | 2022-12-12 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 촬상 장치 |
CA3047826A1 (fr) | 2016-12-22 | 2018-06-28 | Quantum-Si Incorporated | Photodetecteur integre a pixel de compartimentage direct |
KR102662585B1 (ko) * | 2017-01-09 | 2024-04-30 | 삼성전자주식회사 | 이미지 센서 |
JP7121468B2 (ja) | 2017-02-24 | 2022-08-18 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
BR112020000799A2 (pt) * | 2017-07-24 | 2020-07-14 | Quantum-Si Incorporated | estruturas fotônicas de rejeição óptica |
JP6985054B2 (ja) * | 2017-08-01 | 2021-12-22 | スタンレー電気株式会社 | 撮像装置 |
JP7451029B2 (ja) * | 2017-11-09 | 2024-03-18 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
US10741592B2 (en) | 2018-06-07 | 2020-08-11 | Semiconductor Components Industries, Llc | Image sensors with multi-photodiode image pixels and vertical transfer gates |
WO2019246328A1 (fr) | 2018-06-22 | 2019-12-26 | Quantum-Si Incorporated | Photodétecteur intégré à intervalle de stockage de charge à temps de détection varié |
US10566359B1 (en) * | 2018-08-22 | 2020-02-18 | Omnivision Technologies, Inc. | Variably biased isolation structure for global shutter pixel storage node |
JP2023501225A (ja) | 2019-10-31 | 2023-01-18 | クアンタム-エスアイ インコーポレイテッド | 改良されたドレインを備えるピクセル |
-
2020
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- 2020-06-26 BR BR112021026534A patent/BR112021026534A2/pt not_active Application Discontinuation
- 2020-06-26 CA CA3144668A patent/CA3144668A1/fr active Pending
- 2020-06-26 AU AU2020302737A patent/AU2020302737A1/en active Pending
- 2020-06-26 JP JP2021577582A patent/JP2022539561A/ja active Pending
- 2020-06-26 MX MX2022000057A patent/MX2022000057A/es unknown
- 2020-06-26 EP EP20743908.4A patent/EP3973272A1/fr active Pending
- 2020-06-26 US US16/913,688 patent/US11804499B2/en active Active
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- 2020-06-26 WO PCT/US2020/039868 patent/WO2020264331A1/fr unknown
- 2020-06-29 TW TW109121939A patent/TW202107727A/zh unknown
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KR20220025853A (ko) | 2022-03-03 |
TW202107727A (zh) | 2021-02-16 |
CA3144668A1 (fr) | 2020-12-30 |
US20230253421A1 (en) | 2023-08-10 |
CN114729886A (zh) | 2022-07-08 |
US20200408690A1 (en) | 2020-12-31 |
BR112021026534A2 (pt) | 2022-05-03 |
AU2020302737A1 (en) | 2022-01-27 |
JP2022539561A (ja) | 2022-09-12 |
EP3973272A1 (fr) | 2022-03-30 |
IL289263A (en) | 2022-02-01 |
US11804499B2 (en) | 2023-10-31 |
WO2020264331A1 (fr) | 2020-12-30 |
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