MX2022000057A - Rechazo de trayectoria secundaria optica y electrica. - Google Patents

Rechazo de trayectoria secundaria optica y electrica.

Info

Publication number
MX2022000057A
MX2022000057A MX2022000057A MX2022000057A MX2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A MX 2022000057 A MX2022000057 A MX 2022000057A
Authority
MX
Mexico
Prior art keywords
charge carriers
photons
optical
secondary path
embodiments relate
Prior art date
Application number
MX2022000057A
Other languages
English (en)
Spanish (es)
Inventor
Ali Kabiri
Gerard Schmid
Keith G Fife
Farshid Ghasemi
Todd Rearick
Eric A G Webster
Dajiang Yang
Original Assignee
Quantum Si Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Si Inc filed Critical Quantum Si Inc
Publication of MX2022000057A publication Critical patent/MX2022000057A/es

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
    • G01N2021/6441—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks with two or more labels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N2021/6463—Optics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/064—Stray light conditioning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Measuring Cells (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
MX2022000057A 2019-06-28 2020-06-26 Rechazo de trayectoria secundaria optica y electrica. MX2022000057A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962868829P 2019-06-28 2019-06-28
PCT/US2020/039868 WO2020264331A1 (fr) 2019-06-28 2020-06-26 Rejet de trajet secondaire optique et électrique

Publications (1)

Publication Number Publication Date
MX2022000057A true MX2022000057A (es) 2022-05-30

Family

ID=71738284

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2022000057A MX2022000057A (es) 2019-06-28 2020-06-26 Rechazo de trayectoria secundaria optica y electrica.

Country Status (12)

Country Link
US (2) US11804499B2 (fr)
EP (1) EP3973272A1 (fr)
JP (1) JP2022539561A (fr)
KR (1) KR20220025853A (fr)
CN (1) CN114729886A (fr)
AU (1) AU2020302737A1 (fr)
BR (1) BR112021026534A2 (fr)
CA (1) CA3144668A1 (fr)
IL (1) IL289263A (fr)
MX (1) MX2022000057A (fr)
TW (1) TW202107727A (fr)
WO (1) WO2020264331A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11237326B2 (en) * 2017-07-24 2022-02-01 Quantum-Si Incorporated Optical rejection photonic structures using two spatial filters
CA3168138A1 (fr) 2020-01-14 2021-07-22 Quantum-Si Incorporated Capteur integre pour caracterisation de duree de vie
TW202145595A (zh) 2020-01-14 2021-12-01 美商寬騰矽公司 用於壽命及光譜特性分析之感應器
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
KR20220165754A (ko) 2020-04-08 2022-12-15 퀀텀-에스아이 인코포레이티드 스큐가 감소된 통합 센서
IL302221A (en) 2020-10-22 2023-06-01 Quantum Si Inc An integrated circuit with series-coupled charge storage and related techniques
WO2022256576A1 (fr) * 2021-06-03 2022-12-08 Quantum-Si Incorporated Isolation de substrat inter-pixel

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154382A (en) * 1978-05-25 1979-12-05 Canon Inc Photo sensor device
US5814565A (en) 1995-02-23 1998-09-29 University Of Utah Research Foundation Integrated optic waveguide immunosensor
US5986297A (en) * 1996-05-22 1999-11-16 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
JP3442283B2 (ja) * 1998-04-28 2003-09-02 セイコーインスツルメンツ株式会社 リニアイメージセンサ
US6787308B2 (en) 1998-07-30 2004-09-07 Solexa Ltd. Arrayed biomolecules and their use in sequencing
JP3319419B2 (ja) * 1999-02-24 2002-09-03 日本電気株式会社 固体撮像装置
WO2001063905A2 (fr) * 2000-02-23 2001-08-30 Photobit Corporation Nouveau circuit pixel d'obturateur d'image avec noeud de stockage isole
US7175811B2 (en) 2000-04-28 2007-02-13 Edgelight Biosciences Micro-array evanescent wave fluorescence detection device
US6917726B2 (en) 2001-09-27 2005-07-12 Cornell Research Foundation, Inc. Zero-mode clad waveguides for performing spectroscopy with confined effective observation volumes
FR2813121A1 (fr) 2000-08-21 2002-02-22 Claude Weisbuch Dispositif perfectionne de support d'elements chromophores
JP2004522303A (ja) 2001-04-19 2004-07-22 エスティーマイクロエレクトロニクス ソチエタ レスポンサビリタ リミテ 集積された半導体デバイスのためのコンタクト構造
JP4540899B2 (ja) 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法
JP4643249B2 (ja) * 2004-12-22 2011-03-02 株式会社東芝 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
US7738086B2 (en) 2005-05-09 2010-06-15 The Trustees Of Columbia University In The City Of New York Active CMOS biosensor chip for fluorescent-based detection
US7426322B2 (en) 2005-07-20 2008-09-16 Searete Llc. Plasmon photocatalysis
JP4649623B2 (ja) * 2006-01-18 2011-03-16 国立大学法人静岡大学 固体撮像装置及びその画素信号の読みだし方法
US8975216B2 (en) 2006-03-30 2015-03-10 Pacific Biosciences Of California Articles having localized molecules disposed thereon and methods of producing same
EP2012114B1 (fr) * 2006-04-26 2014-05-07 National University Corporation Nara Institute of Science and Technology Capteur d'image optique et électrique pour mesures biomédicales
EP3936857B1 (fr) 2006-09-01 2023-06-21 Pacific Biosciences Of California, Inc. Substrats, systèmes et procédés d'analyse de matériaux
US8207509B2 (en) 2006-09-01 2012-06-26 Pacific Biosciences Of California, Inc. Substrates, systems and methods for analyzing materials
FR2908888B1 (fr) 2006-11-21 2012-08-03 Centre Nat Rech Scient Dispositif pour la detection exaltee de l'emission d'une particule cible
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
WO2009082706A1 (fr) 2007-12-21 2009-07-02 The Trustees Of Columbia University In The City Of New York Réseau de capteur cmos actif pour la détection biomoléculaire électrochimique
US8158988B2 (en) * 2008-06-05 2012-04-17 International Business Machines Corporation Interlevel conductive light shield
EP4325209A3 (fr) 2008-09-16 2024-05-01 Pacific Biosciences Of California, Inc. Dispositif optique intégré
US8278728B2 (en) 2009-10-17 2012-10-02 Florida Institute Of Technology Array of concentric CMOS photodiodes for detection and de-multiplexing of spatially modulated optical channels
EP4378584A2 (fr) 2010-02-19 2024-06-05 Pacific Biosciences Of California, Inc. Système analytique intégré et procédé de mesure de fluorescence
US8865078B2 (en) 2010-06-11 2014-10-21 Industrial Technology Research Institute Apparatus for single-molecule detection
US8878264B2 (en) * 2011-04-26 2014-11-04 Aptina Imaging Corporation Global shutter pixel with improved efficiency
JP6095258B2 (ja) * 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
DE102011076635B3 (de) 2011-05-27 2012-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Detektor zur Detektion elektromagnetischer Strahlung mit Transfersteuerelektrode und Abflusssteuerelektrode
JP5794068B2 (ja) * 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
US8778849B2 (en) 2011-10-28 2014-07-15 Illumina, Inc. Microarray fabrication system and method
US9606060B2 (en) 2012-01-13 2017-03-28 California Institute Of Technology Filterless time-domain detection of one or more fluorophores
US9372308B1 (en) 2012-06-17 2016-06-21 Pacific Biosciences Of California, Inc. Arrays of integrated analytical devices and methods for production
JP6126593B2 (ja) * 2012-06-29 2017-05-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
US9041081B2 (en) 2012-09-20 2015-05-26 Semiconductor Components Industries, Llc Image sensors having buried light shields with antireflective coating
EP2936222B1 (fr) 2012-12-18 2019-07-03 Pacific Biosciences Of California, Inc. Un dispositif analytique optique
US10325947B2 (en) * 2013-01-17 2019-06-18 Semiconductor Components Industries, Llc Global shutter image sensors with light guide and light shield structures
JP2014165270A (ja) * 2013-02-22 2014-09-08 Sony Corp イメージセンサおよび電子機器
JP2014192348A (ja) * 2013-03-27 2014-10-06 Sony Corp 固体撮像装置およびその製造方法、並びに電子機器
KR20140130969A (ko) * 2013-05-02 2014-11-12 삼성전자주식회사 이미지 센서 및 이를 제조하는 방법
JP2015012126A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
US20150060966A1 (en) * 2013-08-27 2015-03-05 Aptina Imaging Corporation Image sensors with silicide light shields
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
US9765395B2 (en) 2014-04-28 2017-09-19 Nanomedical Diagnostics, Inc. System and method for DNA sequencing and blood chemistry analysis
US10157952B2 (en) * 2014-05-23 2018-12-18 Panasonic Intellectual Property Management Co., Ltd. Imaging device including semiconductor substrate and unit pixel cell
KR102234041B1 (ko) * 2014-06-18 2021-04-01 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
KR102253003B1 (ko) * 2014-07-11 2021-05-17 삼성전자주식회사 이미지 센서의 픽셀 어레이 및 이미지 센서
US9921157B2 (en) 2014-08-08 2018-03-20 Quantum-Si Incorporated Optical system and assay chip for probing, detecting and analyzing molecules
US9666748B2 (en) 2015-01-14 2017-05-30 International Business Machines Corporation Integrated on chip detector and zero waveguide module structure for use in DNA sequencing
KR102363433B1 (ko) * 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
WO2016149397A1 (fr) 2015-03-16 2016-09-22 Pacific Biosciences Of California, Inc. Dispositifs et systèmes intégrés pour couplage optique par espace libre
US9584744B2 (en) * 2015-06-23 2017-02-28 Semiconductor Components Industries, Llc Image sensors with voltage-biased trench isolation structures
EP3343620A4 (fr) * 2015-09-29 2018-08-08 Towerjazz Panasonic Semiconductor Co., Ltd. Dispositif d'imagerie à semi-conducteurs
WO2018008614A1 (fr) 2016-07-06 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie, procédé de production d'élément d'imagerie, et dispositif électronique d'imagerie
US9917126B1 (en) 2016-09-13 2018-03-13 Stmicroelectronics (Crolles 2) Sas Metal shield trenches and metal substrate contacts supported within the premetallization dielectric (PMD) layer of an integrated circuit using a middle end of line (MEOL) process
KR102570346B1 (ko) * 2016-10-20 2023-08-25 에스케이하이닉스 주식회사 쉴드들을 가진 이미지 센서 및 그 제조 방법
KR102476411B1 (ko) * 2016-12-01 2022-12-12 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 촬상 장치
BR112019012540A2 (pt) 2016-12-22 2019-11-12 Quantum-Si Incorporated fotodetector integrado com pixel de acondicionamento direto
KR102662585B1 (ko) * 2017-01-09 2024-04-30 삼성전자주식회사 이미지 센서
JP7121468B2 (ja) 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
US11237326B2 (en) * 2017-07-24 2022-02-01 Quantum-Si Incorporated Optical rejection photonic structures using two spatial filters
JP6985054B2 (ja) * 2017-08-01 2021-12-22 スタンレー電気株式会社 撮像装置
CN111279482A (zh) * 2017-11-09 2020-06-12 索尼半导体解决方案公司 固态摄像装置和电子设备
US10741592B2 (en) 2018-06-07 2020-08-11 Semiconductor Components Industries, Llc Image sensors with multi-photodiode image pixels and vertical transfer gates
CA3108295A1 (fr) 2018-06-22 2019-12-26 Quantum-Si Incorporated Photodetecteur integre a intervalle de stockage de charge a temps de detection varie
US10566359B1 (en) * 2018-08-22 2020-02-18 Omnivision Technologies, Inc. Variably biased isolation structure for global shutter pixel storage node
IL292527A (en) 2019-10-31 2022-06-01 Quantum Si Inc Pixel with improved emptying

Also Published As

Publication number Publication date
CA3144668A1 (fr) 2020-12-30
KR20220025853A (ko) 2022-03-03
US11804499B2 (en) 2023-10-31
US20200408690A1 (en) 2020-12-31
WO2020264331A1 (fr) 2020-12-30
IL289263A (en) 2022-02-01
JP2022539561A (ja) 2022-09-12
EP3973272A1 (fr) 2022-03-30
CN114729886A (zh) 2022-07-08
TW202107727A (zh) 2021-02-16
US20230253421A1 (en) 2023-08-10
AU2020302737A1 (en) 2022-01-27
BR112021026534A2 (pt) 2022-05-03

Similar Documents

Publication Publication Date Title
MX2022000057A (es) Rechazo de trayectoria secundaria optica y electrica.
US9214322B2 (en) Ion detection system and method
JP6759519B2 (ja) イオン検出器、飛行時間型質量分析器及びイオン検出方法
US10770280B2 (en) Right angle time-of-flight detector with an extended life time
KR20230122180A (ko) 현미경을 위한 반도체 하전 입자 검출기
GB2528875A (en) Detection system for time of flight mass spectrometry
EP2518756A3 (fr) Détecteur "in column" pour colonne d'optique corpusculaire
MX174400B (es) Detector de electrones secundarios para usarse en una atmosfera gaseosa
EP2463891A3 (fr) Système de spectromètre de masse miniature
WO2012008836A3 (fr) Appareil d'inspection et porte remplaçable destinée à la chambre à vide de cet appareil d'inspection, et procédé de fonctionnement d'un appareil d'inspection
WO2011104077A3 (fr) Accélérateur de particules chargées
WO2005017973A8 (fr) Photodetecteur a avalanche semiconducteur comportant une zone d'acceleration d'electrons a interstice a vide ou gazeux
CN105628662A (zh) 原子荧光光度计
US10910193B2 (en) Particle detection assembly, system and method
RU2011127824A (ru) Способ генерации широкополосного электромагнитного излучения свч диапазона и устройство для его осуществления
US20170153190A1 (en) X-ray detection signal processing device and x-ray analyzing apparatus using same
RU137381U1 (ru) Устройство времяпролетного масс-спектрометра для разделения и регистрации ионов анализируемых веществ
Petersen ATLAS Trigger System
Dolenec et al. Time-of-flight with photonis multi-channel MCP-PMT using MCP signal
WO2020117123A3 (fr) Dispositif d'ouverture et agencement d'analyseur
de Béjar Muiños Identity and belonging in Hiromi Goto's" Chorus of mushrooms"
SE1950445A1 (en) Aperture device and analyser arrangement
RU2012157719A (ru) Электростатический инжектор частиц для высокочастотного ускорителя заряженных частиц
Jeff submitter: Ghosts and satellites measured with the LHC LDM
TW200512943A (en) Device of detecting nanoparticle and method of the same