KR980005545A - 반도체 소자의 제조방법 - Google Patents

반도체 소자의 제조방법 Download PDF

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Publication number
KR980005545A
KR980005545A KR1019960024525A KR19960024525A KR980005545A KR 980005545 A KR980005545 A KR 980005545A KR 1019960024525 A KR1019960024525 A KR 1019960024525A KR 19960024525 A KR19960024525 A KR 19960024525A KR 980005545 A KR980005545 A KR 980005545A
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KR
South Korea
Prior art keywords
film
metal silicide
semiconductor device
silicide film
metal
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KR1019960024525A
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English (en)
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KR100403355B1 (ko
Inventor
이우봉
김호성
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019960024525A priority Critical patent/KR100403355B1/ko
Publication of KR980005545A publication Critical patent/KR980005545A/ko
Application granted granted Critical
Publication of KR100403355B1 publication Critical patent/KR100403355B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 금속 실리사이드에 대한 보호막을 형성하는 반도체 소자의 제조방법에 관한 것으로, 금속 실리사이드에 대한 보호막을 형성하여 금속 실리사이드막의 전도 특성을 개선함과 더불어 금속 배선형성시 스텝 커버리지를 향상시킬 수 있도록 하기 위하여, 폴리실리콘 상부에 금속 실리사이드막이 형성된 반도체 소자의 제조방법에 있어서, 금속 실리사이드막 상부에 금속 실리사이드에 대한 보호막을 형성하는 단계를 포함하는 것을 특징으로 하고, 또한 보호막은 금속 질화막과 실리콘 질화막인 것을 특징으로 한다.

Description

반도체 소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일 실시예에 따른 금속 실리사이드 보호막이 적용된 금속 실리사이드 구조의 워드라인 형성방법을 나타낸 공정 단면도.

Claims (7)

  1. 폴리실리콘 상부에 금속 실리사이드막이 형성된 반도체 소자의 제조방법에 있어서, 상기 금속 실리사이드막 상부에 금속 실리사이드막에 대한 보호막을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
  2. 제1항에 있어서, 상기 보호막은 금속 질화막과 실리콘 질화막인 것을 특징으로 하는 반도체 소자의 제조방법.
  3. 제1항에 있어서, 상기 보호막은 상기 금속 실리사이드막을 어닐링하여 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
  4. 제1항에 있어서, 상기 보호막은 상기 금속 실리사이드막을 질소 가스 분위기에서 RTP를 진행하여 상기 질소가 금속 실리사이드막의 금속과 반응하여 금속 질화막을 형성함과 동시에 상기 금속 실리사이드막의 실리콘과 반응하여 실리콘 질화막을 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
  5. 제3항에 있어서, 상기 어닐링은 질소 가스 분위기에서 RTP(Rapid Thermal Proeess) 를 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
  6. 제5항에 있어서, 상기 어닐링은 650 내지 1100℃의 온도에서 RTP(Rapid Thermal Proeess) 처리를 진행하는 것을 특징으로 하는 반도체 소자의 제조방법.
  7. 제1항에 있어서, 상기 금속 실리사이드막은 텅스텐 실리사이드막인 것을 특징으로 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960024525A 1996-06-27 1996-06-27 반도체소자의제조방법 KR100403355B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960024525A KR100403355B1 (ko) 1996-06-27 1996-06-27 반도체소자의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024525A KR100403355B1 (ko) 1996-06-27 1996-06-27 반도체소자의제조방법

Publications (2)

Publication Number Publication Date
KR980005545A true KR980005545A (ko) 1998-03-30
KR100403355B1 KR100403355B1 (ko) 2004-01-13

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ID=37422533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960024525A KR100403355B1 (ko) 1996-06-27 1996-06-27 반도체소자의제조방법

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KR (1) KR100403355B1 (ko)

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KR100403355B1 (ko) 2004-01-13

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