KR970705168A - 마이크로일렉트로닉 구조에 사용되는 노볼락 중합체로된 평탄한 피막(novolac polymer planarization films for microelectronic structures) - Google Patents

마이크로일렉트로닉 구조에 사용되는 노볼락 중합체로된 평탄한 피막(novolac polymer planarization films for microelectronic structures) Download PDF

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KR970705168A
KR970705168A KR1019970700031A KR19970700031A KR970705168A KR 970705168 A KR970705168 A KR 970705168A KR 1019970700031 A KR1019970700031 A KR 1019970700031A KR 19970700031 A KR19970700031 A KR 19970700031A KR 970705168 A KR970705168 A KR 970705168A
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substrate
mixtures
molecular weight
surfactant
fluorinated
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KR100252579B1 (ko
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제임스 스티븐 드레이지
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크리스 로저 에이취.
알라이드 시그날 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

본 발명은 열에 노출되는 경우 기판에 부착되어 있는 평탄화 피막을 형성하는 개선된 방법에 관한 것으로, 저분자량 노볼락 수지, 비-플루오린화 하이드로카본, 플루오린화 하이드로카본 및 이들의 혼합물로 구성되는 그룹으로부터 선택된 계면활성제, 및 임의의 유기 용매를 함유하는 중합체 용액을 기판에 적용하는 단계, 그후 기판을 가열하는 단계를 포함한다.

Description

마이크로일렉트로닉 구조에 사용되는 노볼락 중합체로된 평탄한 피막(NOVOLAC POLYMER PLANARIZATION FILMS FOR MICROELECTRONIC STRUCTURES).
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. (a) 저 분자량 노볼락 수지 및 비-플루오린화 하이드로카본, 플루오린화 하이드로카본과 이들의 혼합물로 구성된 그룹으로 부터 선택된 계면활성제를 포함하는 중합체 용액을 기판의 표면에 적용하는 단계;및 (b) 상기 용액과 기판을 가열하여 표면에 연속적으로 평탄한 피막을 형성하는 단계;를 포함하며, 상기 피막은 열에 노출되는 경우 기판에 부착되어 있도록 개선된 기판에 연속적인 평탄한 피막 형성 방법.
  2. 제1항에 있어서, 상기 용액은 부가적으로 유기 용매를 포함함을 특징으로 하는 방법.
  3. 제2항에 있어서, 상기 용액은 용액의 총 중량을 기준으로 저 분자량 노볼락 수지 약 1-90중량%, 계면활성제 약 0.01-약5중량% 그리고 용매 약 0-약 90중량%를 포함함을 특징으로 하는 방법.
  4. 제2항에 있어서, 상기 노볼락 수지는 분자량이 약200 및 20,000amu임을 특징으로 하는 방법.
  5. 제2항에 있어서, 상기 비-플루오린화 하이드로카본 계면활성제는 약 5-약 50개의 탄소 원자를 갖는 유기산의 지방족 유도체, 이들의 에스테르 및 이들의 혼합물로 이루어짐을 특징으로 하는 방법.
  6. 제5항에 있어서, 상기 비-플루오린화 하이드로카본 계면활성제는 디-옥틸 술폰숙시네이트, 지방성 알코올 폴리글리콜 술포숙시네이트 및 이들의 혼합물로 구성되는 그룹으로 부터 선택됨을 특징으로 하는 방법.
  7. 제2항에 있어서, 상기 플루오린화 하이드로카본 계면활성제는 약 5-약 50개의 탄소 원자를 갖으며 최소 하나의 탄소-플루오린 결합을 갖는 유기산의 지방족 유도체 및 이들의 에스테르, 약 5-약 50개의 탄소 원자를 갖으며 최소 하나의 탄소-플루오린 결합을 갖는 플루오로알킬 술포네이트 알킬암모늄염 및 이들의 혼합물로 이루어짐을 특징으로 하는 방법.
  8. 저분자량 노볼락 수지 및 비-플루오린화 하이드로카본, 플루오린화 하이드로카본 및 이들의 혼합물로 부터 구성되는 그룹으로 부터 선택된 계면활성제를 포함하며 따라서 열에 노출되는 경우 기판으로 부터 디라미네이션되지않는 연속적으로 평탄화된 피막을 갖는 기판.
  9. 조성물의 총중량을 기준으로 저분자량 노볼락 수지 약 1-약 90중량%; 플루오린화 하이드로카본, 비-플루오린화 하이드로카본 및 이들의 혼합물로 구성되는 그룹으로 부터 선택된 계면활성제 약 0.01-약 5중량%; 및 유기 용매 약 0- 약 90%를 포함하는 조성물.
  10. 제9항에 있어서, 상기 플루오린화 하이드로카본 계면활성제는 실험식이 CxHyFzOaNb이며, 식중에는 x는 약 5-10, y는 약 0-약 20, z는 약 1-약 20, a는 약 2-약 6 그리고 b는 약 0-약 1이고, 분자량은 약 5,500-8,500amu인 플루오로지방족 중합체 에스테르임을 특징으로 하는 조성물.
  11. 제1항에 있어서, 상기 기판의 표면은 피막으로 국부적, 지역적 혹은 전체적으로 평탄화됨을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970700031A 1994-07-06 1995-07-05 마이크로일렉트로닉 구조에 사용되는 노볼락 중합체로 된 평탄한 피막 KR100252579B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/271,291 US5858547A (en) 1994-07-06 1994-07-06 Novolac polymer planarization films for microelectronic structures
US8/271,291 1994-07-06
US08/271,291 1994-07-06
PCT/US1995/008417 WO1996002066A2 (en) 1994-07-06 1995-07-05 Novolac polymer planarization films for microelectronic structures

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KR100252579B1 KR100252579B1 (ko) 2000-06-01

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US (1) US5858547A (ko)
EP (1) EP0769204B1 (ko)
JP (1) JP3188471B2 (ko)
KR (1) KR100252579B1 (ko)
CN (1) CN1125690C (ko)
AT (1) ATE212475T1 (ko)
AU (1) AU3093495A (ko)
CA (1) CA2194376A1 (ko)
DE (1) DE69525157T2 (ko)
IL (1) IL114336A (ko)
TW (1) TW494278B (ko)
WO (1) WO1996002066A2 (ko)

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ATE212475T1 (de) 2002-02-15
KR100252579B1 (ko) 2000-06-01
JPH09507966A (ja) 1997-08-12
WO1996002066A2 (en) 1996-01-25
TW494278B (en) 2002-07-11
WO1996002066A3 (en) 1996-05-02
CN1156421A (zh) 1997-08-06
EP0769204A2 (en) 1997-04-23
DE69525157T2 (de) 2002-08-22
US5858547A (en) 1999-01-12
IL114336A0 (en) 1995-10-31
DE69525157D1 (de) 2002-03-14
EP0769204B1 (en) 2002-01-23
JP3188471B2 (ja) 2001-07-16
CN1125690C (zh) 2003-10-29
AU3093495A (en) 1996-02-09
CA2194376A1 (en) 1996-01-25
IL114336A (en) 1999-12-22

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