DE69525157D1 - Glättungsfilm aus novolacpolymer für mikroelektronische strukturen - Google Patents

Glättungsfilm aus novolacpolymer für mikroelektronische strukturen

Info

Publication number
DE69525157D1
DE69525157D1 DE69525157T DE69525157T DE69525157D1 DE 69525157 D1 DE69525157 D1 DE 69525157D1 DE 69525157 T DE69525157 T DE 69525157T DE 69525157 T DE69525157 T DE 69525157T DE 69525157 D1 DE69525157 D1 DE 69525157D1
Authority
DE
Germany
Prior art keywords
smoothing film
microelectronic structures
novolac polymer
polymer smoothing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525157T
Other languages
English (en)
Other versions
DE69525157T2 (de
Inventor
Steven Drage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of DE69525157D1 publication Critical patent/DE69525157D1/de
Application granted granted Critical
Publication of DE69525157T2 publication Critical patent/DE69525157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Magnetic Heads (AREA)
  • Materials For Photolithography (AREA)
DE1995625157 1994-07-06 1995-07-05 Glättungsfilm aus novolacpolymer für mikroelektronische strukturen Expired - Fee Related DE69525157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/271,291 US5858547A (en) 1994-07-06 1994-07-06 Novolac polymer planarization films for microelectronic structures
PCT/US1995/008417 WO1996002066A2 (en) 1994-07-06 1995-07-05 Novolac polymer planarization films for microelectronic structures

Publications (2)

Publication Number Publication Date
DE69525157D1 true DE69525157D1 (de) 2002-03-14
DE69525157T2 DE69525157T2 (de) 2002-08-22

Family

ID=23034966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995625157 Expired - Fee Related DE69525157T2 (de) 1994-07-06 1995-07-05 Glättungsfilm aus novolacpolymer für mikroelektronische strukturen

Country Status (12)

Country Link
US (1) US5858547A (de)
EP (1) EP0769204B1 (de)
JP (1) JP3188471B2 (de)
KR (1) KR100252579B1 (de)
CN (1) CN1125690C (de)
AT (1) ATE212475T1 (de)
AU (1) AU3093495A (de)
CA (1) CA2194376A1 (de)
DE (1) DE69525157T2 (de)
IL (1) IL114336A (de)
TW (1) TW494278B (de)
WO (1) WO1996002066A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6506831B2 (en) * 1998-12-20 2003-01-14 Honeywell International Inc. Novolac polymer planarization films with high temperature stability
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
DE10146146B4 (de) 2001-09-19 2004-02-05 Infineon Technologies Ag Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
AU2003286758A1 (en) * 2003-07-17 2005-03-07 Honeywell International Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
KR101232137B1 (ko) * 2005-11-21 2013-02-12 엘지디스플레이 주식회사 인쇄판, 인쇄판의 제조방법 및 그를 이용한 액정표시소자제조방법
WO2009108574A2 (en) * 2008-02-25 2009-09-03 Honeywell International Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
WO2012117948A1 (ja) * 2011-02-28 2012-09-07 Jsr株式会社 レジスト下層膜形成用組成物、パターン形成方法及びレジスト下層膜
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8828489B2 (en) 2011-08-19 2014-09-09 International Business Machines Corporation Homogeneous modification of porous films
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535705B2 (de) * 1973-07-28 1978-03-01
US4167500A (en) * 1976-06-14 1979-09-11 Lord Corporation Aqueous compositions comprising phenolic resin and crosslinking agent
DE2943725C2 (de) * 1979-10-30 1984-07-19 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur Prüfung einer Fehlerstromschutzeinrichtung mit einem Summenstromwandler und Einrichtungen zur Durchführung des Verfahrens
US4515828A (en) * 1981-01-02 1985-05-07 International Business Machines Corporation Planarization method
JPS5982746A (ja) * 1982-11-04 1984-05-12 Toshiba Corp 半導体装置の電極配線方法
US4427713A (en) * 1983-01-17 1984-01-24 Rca Corporation Planarization technique
US4604162A (en) * 1983-06-13 1986-08-05 Ncr Corporation Formation and planarization of silicon-on-insulator structures
US4511430A (en) * 1984-01-30 1985-04-16 International Business Machines Corporation Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process
US4532005A (en) * 1984-05-21 1985-07-30 At&T Bell Laboratories Device lithography using multi-level resist systems
US4619837A (en) * 1985-02-01 1986-10-28 Advanced Micro Devices, Inc. Polymerizable planarization layer for integrated circuit structures
US4621045A (en) * 1985-06-03 1986-11-04 Motorola, Inc. Pillar via process
US4621042A (en) * 1985-08-16 1986-11-04 Rca Corporation Absorptive planarizing layer for optical lithography
US4701390A (en) * 1985-11-27 1987-10-20 Macdermid, Incorporated Thermally stabilized photoresist images
US4762768A (en) * 1986-01-29 1988-08-09 Macdermid, Incorporated Thermally stabilized photoresist images
EP0260994B1 (de) * 1986-09-18 1992-07-15 Japan Synthetic Rubber Co., Ltd. Herstellungsverfahren einer integrierten Schaltung
JPH0770527B2 (ja) * 1987-02-27 1995-07-31 アメリカン テレフォン アンド テレグラフ カムパニー デバイス作製方法
US4904516A (en) * 1988-01-12 1990-02-27 Certain Teed Corp Phenol-formaldehyde resin solution containing water soluble alkaline earth metal salt
US5178988A (en) * 1988-09-13 1993-01-12 Amp-Akzo Corporation Photoimageable permanent resist
US5276126A (en) * 1991-11-04 1994-01-04 Ocg Microelectronic Materials, Inc. Selected novolak resin planarization layer for lithographic applications

Also Published As

Publication number Publication date
AU3093495A (en) 1996-02-09
US5858547A (en) 1999-01-12
CN1125690C (zh) 2003-10-29
CA2194376A1 (en) 1996-01-25
IL114336A0 (en) 1995-10-31
CN1156421A (zh) 1997-08-06
WO1996002066A2 (en) 1996-01-25
EP0769204A2 (de) 1997-04-23
WO1996002066A3 (en) 1996-05-02
IL114336A (en) 1999-12-22
KR970705168A (ko) 1997-09-06
ATE212475T1 (de) 2002-02-15
DE69525157T2 (de) 2002-08-22
TW494278B (en) 2002-07-11
JPH09507966A (ja) 1997-08-12
EP0769204B1 (de) 2002-01-23
KR100252579B1 (ko) 2000-06-01
JP3188471B2 (ja) 2001-07-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee