JPH09507966A - 超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルム - Google Patents
超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルムInfo
- Publication number
- JPH09507966A JPH09507966A JP50437296A JP50437296A JPH09507966A JP H09507966 A JPH09507966 A JP H09507966A JP 50437296 A JP50437296 A JP 50437296A JP 50437296 A JP50437296 A JP 50437296A JP H09507966 A JPH09507966 A JP H09507966A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- molecular weight
- combinations
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920003986 novolac Polymers 0.000 title claims abstract description 56
- 238000004377 microelectronic Methods 0.000 title description 7
- 229920006254 polymer film Polymers 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000004094 surface-active agent Substances 0.000 claims abstract description 44
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 42
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims description 42
- 239000000203 mixture Substances 0.000 claims description 18
- 150000002148 esters Chemical class 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 150000007524 organic acids Chemical class 0.000 claims description 6
- 239000005076 polymer ester Substances 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- 235000005985 organic acids Nutrition 0.000 claims description 4
- HNSDLXPSAYFUHK-UHFFFAOYSA-N 1,4-bis(2-ethylhexyl) sulfosuccinate Chemical compound CCCCC(CC)COC(=O)CC(S(O)(=O)=O)C(=O)OCC(CC)CCCC HNSDLXPSAYFUHK-UHFFFAOYSA-N 0.000 claims description 3
- 229960000878 docusate sodium Drugs 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 2
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- -1 fatty alcohol sulfosuccinate Chemical class 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229940072049 amyl acetate Drugs 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 229940117360 ethyl pyruvate Drugs 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Materials For Photolithography (AREA)
- Magnetic Heads (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.熱に暴露した際にフィルムが基板に付着した状態を保持するように基板上 に連続プレーナー化フィルムを形成する方法であって、改良点が (a)基板の表面に、低分子量ノボラック樹脂、ならびに非フッ素化炭化水素 、フッ素化炭化水素およびその組合わせよりなる群から選ばれる界面活性剤を含 むポリマー溶液を適用し;そして (b)その溶液と基板を加熱してその基板表面に連続プレーナー化フィルムを 形成する ことを含む上記方法。 2.溶液がさらに有機溶剤を含む、請求の範囲第1項にに記載の方法。 3.溶液が溶液の全重量に対して約1〜90重量%の低分子量ノボラック樹脂 、約0.01〜約5重量%の界面活性剤および約0〜約90重量%の溶剤を含む 、請求の範囲第2項に記載の方法。 4.ノボラック樹脂が約200〜約20,000amuの分子量を有する、請 求の範囲第2項に記載の方法。 5.非フッ素化炭化水素系界面活性剤が、約5〜約50個の炭素を有する有機 酸の脂肪族誘導体およびそのエステルならびにその組合わせからなる、請求の範 囲第2項に記載の方法。 6.非フッ素化炭化水素系界面活性剤が、スルホコハク酸ジオクチル、スルホ コハク酸脂肪アルコールポリグリコールおよびその組合わせよりなる群から選ば れる、請求の範囲第5項に記載の方法。 7.フッ素化炭化水素系界面活性剤が、約5〜約50個の炭素および少なくと も1個の炭素−フッ素結合を有する、有機酸の脂肪族誘導体およびそのエステル 、約5〜約60個の炭素および少なくとも1個の炭素−フッ素結合を有するフル オロアルキルスルホネートアルキルアンモニウム塩ならびにその組合わせからな る、請求の範囲第2項に記載の方法。 8.低分子量ノボラック樹脂、ならびに非フッ素化炭化水素、フッ素化炭化水 素およびその組合わせよりなる群から選ばれる界面活性剤を含む連続プレーナー 化フィルムを適用した基板であって、熱に暴露した際にそのフィルムがその基板 から剥離しない上記基板。 9.組成物の全重量に対して: 約1〜90重量%の低分子量ノボラック樹脂; 約0.01〜約5重量%の、フッ素化炭化水素、非フッ素化炭化水素、および その組合わせよりなる群から選ばれる界面活性剤;ならびに 約0〜約90%の有機溶剤 を含む組成物。 10.フッ素化炭化水素系界面活性剤が、実験式CxHyFzOaNb(式中、x =約5〜約10、y=約0〜約20、z=約1〜約20、a=約2〜約6、b= 約0〜約1)を有する、分子量約5500〜8500原子質量単位のフルオロ脂 肪族ポリマーエステルである、請求の範囲第9項に記載の組成物。 11.基板表面がフィルムでローカル、リージョナルまたはグローバルプレー ナー化される、請求の範囲第1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/271,291 | 1994-07-06 | ||
US271,291 | 1994-07-06 | ||
US08/271,291 US5858547A (en) | 1994-07-06 | 1994-07-06 | Novolac polymer planarization films for microelectronic structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09507966A true JPH09507966A (ja) | 1997-08-12 |
JP3188471B2 JP3188471B2 (ja) | 2001-07-16 |
Family
ID=23034966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50437296A Expired - Lifetime JP3188471B2 (ja) | 1994-07-06 | 1995-07-05 | 超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルム |
Country Status (12)
Country | Link |
---|---|
US (1) | US5858547A (ja) |
EP (1) | EP0769204B1 (ja) |
JP (1) | JP3188471B2 (ja) |
KR (1) | KR100252579B1 (ja) |
CN (1) | CN1125690C (ja) |
AT (1) | ATE212475T1 (ja) |
AU (1) | AU3093495A (ja) |
CA (1) | CA2194376A1 (ja) |
DE (1) | DE69525157T2 (ja) |
IL (1) | IL114336A (ja) |
TW (1) | TW494278B (ja) |
WO (1) | WO1996002066A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6506831B2 (en) * | 1998-12-20 | 2003-01-14 | Honeywell International Inc. | Novolac polymer planarization films with high temperature stability |
US6461717B1 (en) | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
JP4654544B2 (ja) * | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
DE10146146B4 (de) * | 2001-09-19 | 2004-02-05 | Infineon Technologies Ag | Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen |
US20040192876A1 (en) * | 2002-11-18 | 2004-09-30 | Nigel Hacker | Novolac polymer planarization films with high temparature stability |
KR101020164B1 (ko) * | 2003-07-17 | 2011-03-08 | 허니웰 인터내셔날 인코포레이티드 | 진보된 마이크로전자적 응용을 위한 평탄화 막, 및 이를제조하기 위한 장치 및 방법 |
US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
KR101232137B1 (ko) * | 2005-11-21 | 2013-02-12 | 엘지디스플레이 주식회사 | 인쇄판, 인쇄판의 제조방법 및 그를 이용한 액정표시소자제조방법 |
JP5378420B2 (ja) * | 2008-02-25 | 2013-12-25 | ハネウェル・インターナショナル・インコーポレーテッド | 加工可能な無機及び有機ポリマー配合物、それらの製造方法及び使用 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
JP5874722B2 (ja) * | 2011-02-28 | 2016-03-02 | Jsr株式会社 | パターン形成方法 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US8828489B2 (en) | 2011-08-19 | 2014-09-09 | International Business Machines Corporation | Homogeneous modification of porous films |
EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS535705B2 (ja) * | 1973-07-28 | 1978-03-01 | ||
US4167500A (en) * | 1976-06-14 | 1979-09-11 | Lord Corporation | Aqueous compositions comprising phenolic resin and crosslinking agent |
DE2943725C2 (de) * | 1979-10-30 | 1984-07-19 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur Prüfung einer Fehlerstromschutzeinrichtung mit einem Summenstromwandler und Einrichtungen zur Durchführung des Verfahrens |
US4515828A (en) * | 1981-01-02 | 1985-05-07 | International Business Machines Corporation | Planarization method |
JPS5982746A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | 半導体装置の電極配線方法 |
US4427713A (en) * | 1983-01-17 | 1984-01-24 | Rca Corporation | Planarization technique |
US4604162A (en) * | 1983-06-13 | 1986-08-05 | Ncr Corporation | Formation and planarization of silicon-on-insulator structures |
US4511430A (en) * | 1984-01-30 | 1985-04-16 | International Business Machines Corporation | Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process |
US4532005A (en) * | 1984-05-21 | 1985-07-30 | At&T Bell Laboratories | Device lithography using multi-level resist systems |
US4619837A (en) * | 1985-02-01 | 1986-10-28 | Advanced Micro Devices, Inc. | Polymerizable planarization layer for integrated circuit structures |
US4621045A (en) * | 1985-06-03 | 1986-11-04 | Motorola, Inc. | Pillar via process |
US4621042A (en) * | 1985-08-16 | 1986-11-04 | Rca Corporation | Absorptive planarizing layer for optical lithography |
US4762768A (en) * | 1986-01-29 | 1988-08-09 | Macdermid, Incorporated | Thermally stabilized photoresist images |
US4701390A (en) * | 1985-11-27 | 1987-10-20 | Macdermid, Incorporated | Thermally stabilized photoresist images |
DE3780387T2 (de) * | 1986-09-18 | 1993-01-28 | Japan Synthetic Rubber Co Ltd | Herstellungsverfahren einer integrierten schaltung. |
JPH0770527B2 (ja) * | 1987-02-27 | 1995-07-31 | アメリカン テレフォン アンド テレグラフ カムパニー | デバイス作製方法 |
US4904516A (en) * | 1988-01-12 | 1990-02-27 | Certain Teed Corp | Phenol-formaldehyde resin solution containing water soluble alkaline earth metal salt |
US5178988A (en) * | 1988-09-13 | 1993-01-12 | Amp-Akzo Corporation | Photoimageable permanent resist |
US5276126A (en) * | 1991-11-04 | 1994-01-04 | Ocg Microelectronic Materials, Inc. | Selected novolak resin planarization layer for lithographic applications |
-
1994
- 1994-07-06 US US08/271,291 patent/US5858547A/en not_active Expired - Lifetime
-
1995
- 1995-06-26 IL IL11433695A patent/IL114336A/xx not_active IP Right Cessation
- 1995-07-05 KR KR1019970700031A patent/KR100252579B1/ko not_active IP Right Cessation
- 1995-07-05 CA CA 2194376 patent/CA2194376A1/en not_active Abandoned
- 1995-07-05 AT AT95926623T patent/ATE212475T1/de active
- 1995-07-05 WO PCT/US1995/008417 patent/WO1996002066A2/en active IP Right Grant
- 1995-07-05 EP EP95926623A patent/EP0769204B1/en not_active Expired - Lifetime
- 1995-07-05 CN CN95194786A patent/CN1125690C/zh not_active Expired - Fee Related
- 1995-07-05 AU AU30934/95A patent/AU3093495A/en not_active Abandoned
- 1995-07-05 DE DE1995625157 patent/DE69525157T2/de not_active Expired - Fee Related
- 1995-07-05 JP JP50437296A patent/JP3188471B2/ja not_active Expired - Lifetime
- 1995-07-06 TW TW84106973A patent/TW494278B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0769204A2 (en) | 1997-04-23 |
JP3188471B2 (ja) | 2001-07-16 |
AU3093495A (en) | 1996-02-09 |
TW494278B (en) | 2002-07-11 |
WO1996002066A2 (en) | 1996-01-25 |
KR100252579B1 (ko) | 2000-06-01 |
CA2194376A1 (en) | 1996-01-25 |
IL114336A (en) | 1999-12-22 |
CN1156421A (zh) | 1997-08-06 |
KR970705168A (ko) | 1997-09-06 |
IL114336A0 (en) | 1995-10-31 |
CN1125690C (zh) | 2003-10-29 |
US5858547A (en) | 1999-01-12 |
EP0769204B1 (en) | 2002-01-23 |
ATE212475T1 (de) | 2002-02-15 |
WO1996002066A3 (en) | 1996-05-02 |
DE69525157T2 (de) | 2002-08-22 |
DE69525157D1 (de) | 2002-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3188471B2 (ja) | 超小型電子構造体に用いるノボラックポリマー系プレーナー化フィルム | |
KR910007245B1 (ko) | 양성 포토레지스트 | |
EP0126266B1 (en) | Low striation positive resist composition | |
JP5912170B2 (ja) | 反射防止コーティング組成物及びそれの方法 | |
JPS5872139A (ja) | 感光性材料 | |
US5302490A (en) | Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin | |
TWI248138B (en) | Electronic device manufacture | |
US5637436A (en) | Method for removing photoresist composition from substrate surfaces | |
JP2008502935A (ja) | 水性エッジビード除去液 | |
JP2012512305A (ja) | キャリア溶媒組成物、塗布用組成物、及びポリマー厚膜を製造する方法 | |
JP4336200B2 (ja) | 高耐熱性フォトレジスト組成物 | |
JPS59155836A (ja) | 感光性組成物 | |
US6338930B1 (en) | Positive photoresist layer and a method for using the same | |
CN109212905B (zh) | 硬掩模用组合物 | |
KR101984867B1 (ko) | 플루오렌 화합물을 포함하는 반도체 제조용 레지스트 하층막 조성물 | |
US6461785B1 (en) | Composition for positive photoresist | |
JP2507936B2 (ja) | 集積回路の製造方法 | |
JP3214175B2 (ja) | 保護膜材料溶液 | |
US6447975B1 (en) | Composition for positive type photoresist | |
KR100481012B1 (ko) | 내산성을 지닌 감광성 보호막 조성물 | |
TWI717415B (zh) | 高耐熱性光阻組成物及使用其之圖案形成方法 | |
JPS61275748A (ja) | ポジ型フオトレジスト組成物 | |
JP2006330232A (ja) | リフトオフ用ポジ型フォトレジスト組成物 | |
TW202330815A (zh) | 抑制半導體基板圖案崩塌用之填充膜形成材料及半導體基板之處理方法 | |
JP3707708B2 (ja) | ポジ型ホトレジスト塗布液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090511 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100511 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110511 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110511 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120511 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130511 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130511 Year of fee payment: 12 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |