KR970071484A - 자기 저항 효과 소자 - Google Patents

자기 저항 효과 소자 Download PDF

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KR970071484A
KR970071484A KR1019970015806A KR19970015806A KR970071484A KR 970071484 A KR970071484 A KR 970071484A KR 1019970015806 A KR1019970015806 A KR 1019970015806A KR 19970015806 A KR19970015806 A KR 19970015806A KR 970071484 A KR970071484 A KR 970071484A
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South Korea
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layer
magnetoresistive element
diffusion barrier
atomic diffusion
magnetic
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KR1019970015806A
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KR100262282B1 (ko
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유조 가미구치
아키코 사이토
가즈히로 사이토
히데아키 후쿠자와
히토시 이와사키
마사시 사하시
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니시무로 타이조
가부시기가이샤 도시바
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)

Abstract

금속 버퍼층상에 형성된 제1자성층, 이 제1자성층상에 형성된 비자성 중간층, 및 이 비자성 중간층상에 형성된 제2자성층으로 이루어지는 스핀 밸브막을 구비하는 자기 저항 효과 소자가 상기 금속 버퍼층과 제1자성층과의 계면에, 평균두께가 2nm 이하인 원자 확산 배리어층이 설치되어 있다. 또는 자성 기초층과 강자성체층과의 적층막으로 이루어지는 제1자성층과, 이 제1자성층상에 형성된 비자성 중간층, 및 이 비자성 중간층상에 형성된 제2자성층으로 이루어지는 스핀 밸브막을 구비하는 자기 저항 효과 소자가 상기 자성 기초층과 강자성체층과의 계면에, 평균 두께가 2nm 이하인 원자 확산 배리어층이 설치되어 있다.

Description

자기 저항 효과 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1자기 저항 효과 소자의 한 실시 형태의 주요부 구조를 나타내는 단면도이다.

Claims (14)

  1. 금속 버퍼층상에 형성된 제1자성층과, 이 제1자성층상에 형성된 비자성 중간층, 및 이 비자성 중간층상에 형성된 제2자성층으로 이루어지는 스핀 밸브막을 구비하는 자기 저항 효과 소자에 있어서, 상기 금속 버퍼층과 제1자성층의 계면에는 평균 두께가 2nm 이하인 원자 확산 배리어층이 설치되는 것을 특징으로 하는 자기 저항 효과 소자.
  2. 제1항에 있어서, 상기 금속 버퍼층은 fcc 결정 구조를 지니는 금속으로 이루어지며, 또한 상기 제1자성층은 Co를 함유하는 강자성체로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  3. 제1항에 있어서, 상기 원자 확산 배리어층은 산화물, 질화물, 탄화물, 붕소화물 및 플루오르화물 중에서 선택된 적어도 1종으로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  4. 제1항에 있어서, 상기 원자 확산 배리어층은 핀 홀이 형성되어 있는 것을 특징으로 하는 자기 저항 효과 소자.
  5. 제4항에 있어서, 상기 원자 확산 배리어층은 평균 두께가 0.5nm 이상인 것을 특징으로 하는 자기 저항 효과 소자.
  6. 제1항에 있어서, 상기 원자 확산 배리어층은 얼룩 형상으로 불연속적으로 형성되어 있는 것을 특징으로 하는 자기 저항 효과 소자.
  7. 제2항에 있어서, 상기 원자 확산 배리어층은 금속 산화물로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  8. 제1항에 있어서, 상기 원자 확산 배리어층은 강자성체 또는 반강자성체로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  9. 자성 기초층과 강자성체층과의 적층막으로 이루어지는 제1자성층과, 이 제1자성층상에 형성된 비자성 중간층, 및 이 비자성 중간층상에 형성된 제2자성층으로 이루어지는 스핀 밸브막을 구비하는 자기 저항 효과 소자에 있어서, 상기 자성 기초층과 강자성체층과의 계면에는 평균 두께가 2nm 이하인 원자 확산 배리어층이 설치되는 것을 특징으로 하는 자기 저항 효과 소자.
  10. 제9항에 있어서, 상기 제1자성층을 구성하는 강자성체층은 Co를 함유하는 강자성체로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  11. 제9항에 있어서, 상기 원자 확산 배리어층은 산화물, 질화물, 탄화물, 붕화물, 및 플루오르화물 중에서 선택된 적어도 1종으로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
  12. 제9항에 있어서, 상기 원자 확산 배리어층의 평균 두께는 0.5nm 이상인 것을 특징으로 하는 자기 저항 효과 소자.
  13. 제9항에 있어서, 상기 원자 확산 배리어층에는 핀 홀이 형성되어 있는 것을 특징으로 하는 자기 저항 효과 소자.
  14. 제9항에 있어서, 상기 원자 확산 배리어층은 강자성체 또는 반강자성체로 이루어지는 것을 특징으로 하는 자기 저항 효과 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970015806A 1996-04-30 1997-04-28 자기 저항 효과 소자 KR100262282B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10906896 1996-04-30
JP96-109068 1996-04-30

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KR970071484A true KR970071484A (ko) 1997-11-07
KR100262282B1 KR100262282B1 (ko) 2000-10-02

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US (2) US5949622A (ko)
KR (1) KR100262282B1 (ko)
CN (1) CN1083597C (ko)
IN (1) IN191436B (ko)
MY (1) MY121610A (ko)
SG (1) SG47223A1 (ko)
TW (1) TW367493B (ko)

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US6111729A (en) 2000-08-29
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MY121610A (en) 2006-02-28
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