KR910015097A - 강자성막 및 그 제조방법과 이것을 사용한 자기헤드 - Google Patents

강자성막 및 그 제조방법과 이것을 사용한 자기헤드 Download PDF

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KR910015097A
KR910015097A KR1019910000088A KR910000088A KR910015097A KR 910015097 A KR910015097 A KR 910015097A KR 1019910000088 A KR1019910000088 A KR 1019910000088A KR 910000088 A KR910000088 A KR 910000088A KR 910015097 A KR910015097 A KR 910015097A
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도시오 고바야시
료이찌 나까따니
히또시 나까무라
나가쯔구 고이소
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미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
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    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/147—Structure or manufacture of heads, e.g. inductive with cores being composed of metal sheets, i.e. laminated cores with cores composed of isolated magnetic layers, e.g. sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
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    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/1875—"Composite" pole pieces, i.e. poles composed in some parts of magnetic particles and in some other parts of magnetic metal layers
    • G11B5/1877—"Composite" pole pieces, i.e. poles composed in some parts of magnetic particles and in some other parts of magnetic metal layers including at least one magnetic thin film
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
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    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
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    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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    • Y10S428/90—Magnetic feature
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    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
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Abstract

내용 없음

Description

강자성막 및 그 제조방법과 이것을 사용한 자기헤드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 강자성 금속막의 단면도, 제2도는 본 발명의 강자성막의 유지력과 내식성에 미치는 막증의 산소농도의 영향을 도시한 그래프, 제3도 A는 본 발명의 자기헤드의 사시도, 제3도 B는 본 발명의 자기헤드의 갭부 근방을 도시한 평면도.

Claims (20)

  1. 강자성 금속중에 산화물 상이 존재해서 이루어지는 강자성막.
  2. 특허청구의 범위 제1항에 있어서, 상기 산화물 상이 Ⅳa, Ⅴa, Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소를 포함하는 강자성막.
  3. 특허청구의 범위 제1항에 있어서, 상기 산화물 상을 제외한 강자성 금속이 단일상의 결정인 강자성막.
  4. 특허청구의 범위 제1항에 있어서, 상기 강자성 금속이 Fe 도는 Co를 주성분으로한 결정으로 이루어지는 강자성막.
  5. 특허청구의 범위 제4항에 있어서, 상기 결정의 결정입자 지름의 평균값이 200Å이하인 강자성막.
  6. 특허청구의 범위 제5항에 있어서, 상기 산화물 상이 상기 결정의 결정입자 경계부분에 존재하는 강자성막.
  7. 특허청구의 범위 제1항에 있어서, 상기 강자성 금속에 대한 산소의 첨가량이 0.1~15at%인 강자성막.
  8. 특허청구의 범위 제1항에 있어서, 상기 자기특성 또는 내식성의 향상을 우해 다시 1종류 이상의 원소를 첨가한 강자성막.
  9. 강자성 금속층과 Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 산화물을 포함하는 중간층의 적층으로 이루어지는 다층자성막.
  10. 특허청구의 범위 제9항에 있어서, 상기 강자성금속층은 Fe 또는 Co를 주성분으로 하는 다층자성막.
  11. 특허청구의 범위 제9항에 있어서, 상기 중간층의 막두께가 1nm이상인 다층자성막.
  12. 산소를 첨가한 강자성 금속층과 Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소를 포함하는 중간층의 적층으로 이루어지는 다층자성막.
  13. 특허청구의 범위 제12항에 있어서, 상기 강자성 금속층은 Fe 또는 Co를 주성분으로 하는 다층자성막.
  14. 특허청구의 범위 제12항에 있어서, 상기 중간층의 막두께가 1nm이상인 다층자성막.
  15. Fe, Co에서 선택되는 적어도 하나의 원소, Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소와 0.1~15at%의 산소를 산화물 상태로 포함하는 강자성막.
  16. Fe, Co에서 선택되는 적어도 1종류의 원소를 포함하는 타겟과 Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소의 산화물을 포함하는 타겟을 교대로 스퍼터링하여 다층자성막을 형성하는 강자성막의 제조방법.
  17. Fe, Co에서 선택되는 적어도 1종류의 원소와 산소를 포함하는 타겟과 Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소를 포함하는 타겟을 교대로 스퍼터링하여 다층자성막을 형성하는 강자성막의 제조방법.
  18. Fe, Co에서 선택되는 적어도 1종류의 원소와 Ⅳa, Ⅴa,Ⅵa족 원소에서 선택되는 적어도 1종류 이상의 원소를 포함하는 타겟을 산소를 포함하는 스퍼터링하여 가스중에서 스퍼터링하는 강자성막의 제조방법.
  19. 강자성금속중에 산화물 위상이 존재해서 이루어지는 자성막을 갖는 자기회로, 상기 자기히로에 자기적으로 결합하는 코일 및 상기 자기회로의 일부에 마련된 자기 갭을 갖는 자기헤드.
  20. 특허청구의 범위 제19항에 있어서, 상기 자기회로는 기판에 상기 자성막이 피착되어 이루어지는 한쌍의 자기코어를 유리로 접합시켜 이루어지는 자기헤드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910000088A 1990-01-08 1991-01-07 강자성막 및 그 제조방법과 이것을 사용한 자기헤드 KR100210579B1 (ko)

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JPH0766507B2 (ja) * 1984-02-16 1995-07-19 コニカ株式会社 磁気記録媒体
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JP2555057B2 (ja) * 1987-03-25 1996-11-20 株式会社日立製作所 耐食強磁性膜

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