KR890013605A - 자기저항효과형 자기헤드와 그 제조방법 - Google Patents

자기저항효과형 자기헤드와 그 제조방법 Download PDF

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Publication number
KR890013605A
KR890013605A KR1019890001519A KR890001519A KR890013605A KR 890013605 A KR890013605 A KR 890013605A KR 1019890001519 A KR1019890001519 A KR 1019890001519A KR 890001519 A KR890001519 A KR 890001519A KR 890013605 A KR890013605 A KR 890013605A
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South Korea
Prior art keywords
film
magnetic head
type magnetic
magnetoresistance effect
effect type
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KR1019890001519A
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English (en)
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KR920002607B1 (ko
Inventor
마사히로 기따마
노보루 시미즈
히데오 다나베
히또시 나까무라
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미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
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Publication of KR890013605A publication Critical patent/KR890013605A/ko
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Publication of KR920002607B1 publication Critical patent/KR920002607B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

내용 없음.

Description

자기저항효과형 자기헤드와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에서의 자기저항효과형 자기헤드의 단면도.
제2도는 본 발명의 1실시예 및 비교예에서의 열처리 온도와 퍼멀로이막의 보자력의 관계를 도시한 그래프.
제3도는 본 발명의 다른 실시예에서의 자기저항효과형 자기헤드의 단면도.

Claims (8)

  1. Fe를 7-27wt%를 함유하고, 나머지 부분이 Ni 인 Ni-Fe 합금막(2,22)로 되는 자기저항 효과막과 전자빔증착법으로 피착된 Nb막(3,23)으로 되는 션트막의 2층막을 갖는 자기저항 효과형 자기헤드.
  2. 특허청구의 범위 제1항에 있어서, 상기 Nb막(3,23)의 두께가 58Å∼1670Å인 자기저항 효과형 자기헤드.
  3. 특허청구의 범위 제1항에 있어서, 상기 Nb막(3,23)의 두께가 348Å∼835Å인 자기저항 효과형 자기헤드.
  4. 특허청구의 범위 제1항에 있어서, 상기 Nb막(3,23)의 두께가 상기 Ni-Fe합금막(2,22)의 1.16∼1.67배인 자기저항 효과형 자기헤드.
  5. 특허청구의 범위 제1항에 있어서, 상기 전자빔 증착법에서의 기판온도가 150∼300℃인 자기저항 효과형 자기헤드.
  6. 특허청구의 범위 제1항에 있어서, 상기 2층막을 갖는 자기저항효과 소자가 3단자의 차동형으로 구성되는 자기저항 효과형 자기헤드.
  7. (i) Fe 를 7∼27wt% 함유하고, 나머지 부분이 Ni인 Ni-Fe합금막(2,22)로 되는 자기저항 효과막을 기판(1)위에 형성하는 공정, (ii)션트막으로 되는 Nb막(3,23)을 전자빔 증착법에 의해 상기 자기저항 효과막 상에 형성하는 공정 및 (iii)도전재료로 되는 전극(4,24)를 형성하는 공정을 갖는 자기저항 효과형 자기헤드의 제조방법.
  8. 특허청구의 범위 제7항에 있어서, 상기 공정(ii)에서의 전자빔 증착법에 의한 Nb막 성형시의 기판온도가 150∼300℃인 자기저항 효과형 자기헤드의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001519A 1988-02-26 1989-02-10 자기저항 효과형 자기헤드와 그 제조방법 KR920002607B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63041987A JP2613239B2 (ja) 1988-02-26 1988-02-26 磁気抵抗効果型ヘツド
JP63-41987 1988-02-26

Publications (2)

Publication Number Publication Date
KR890013605A true KR890013605A (ko) 1989-09-25
KR920002607B1 KR920002607B1 (ko) 1992-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001519A KR920002607B1 (ko) 1988-02-26 1989-02-10 자기저항 효과형 자기헤드와 그 제조방법

Country Status (4)

Country Link
US (3) US5010433A (ko)
JP (1) JP2613239B2 (ko)
KR (1) KR920002607B1 (ko)
DE (1) DE3905625C2 (ko)

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JP2836474B2 (ja) * 1993-12-15 1998-12-14 日本電気株式会社 磁気抵抗素子とその製造方法
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JPH07192227A (ja) * 1993-12-28 1995-07-28 Sony Corp 磁気抵抗効果型磁気ヘッド
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EP0675554A1 (en) * 1994-03-24 1995-10-04 Nec Corporation Magnetoresistive effect element
US6088204A (en) * 1994-12-01 2000-07-11 International Business Machines Corporation Magnetoresistive magnetic recording head with permalloy sensor layer deposited with substrate heating
JPH08180328A (ja) * 1994-12-21 1996-07-12 Fujitsu Ltd スピンバルブ磁気抵抗効果素子及びその製造方法
US5568335A (en) * 1994-12-29 1996-10-22 International Business Machines Corporation Multi-layer gap structure for high resolution magnetoresistive read head
JPH08287422A (ja) * 1995-04-07 1996-11-01 Alps Electric Co Ltd 磁気抵抗効果型ヘッド
US5617273A (en) * 1995-06-07 1997-04-01 International Business Machines Corporation Thin film slider with protruding R/W element formed by chemical-mechanical polishing
JPH0916916A (ja) * 1995-06-29 1997-01-17 Sony Corp 薄膜磁気ヘッド及びその製造方法
EP0780833A3 (en) * 1995-12-20 1999-01-07 Ampex Corporation Improved magnetic recording system having a saturable layer and detection using MR element
JPH09251616A (ja) * 1996-03-15 1997-09-22 Sony Corp 薄膜磁気ヘッド
US5830590A (en) * 1996-06-28 1998-11-03 Ampex Corporation Magnetic storage and reproducing system with a low permeability keeper and a self-biased magnetoresistive reproduce head
US5861220A (en) * 1996-08-06 1999-01-19 Ampex Corporation Method and apparatus for providing a magnetic storage and reproducing media with a keeper layer having a longitudinal anisotropy
US6249406B1 (en) 1996-09-23 2001-06-19 International Business Machines Corporation Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
US5766780A (en) * 1996-10-15 1998-06-16 Seagate Technology, Inc. Reversed order NIMN exchange biasing for dual magnetoresistive heads
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US5783460A (en) * 1996-10-25 1998-07-21 Headway Technologies, Inc. Method of making self-aligned dual stripe magnetoresistive (DRMR) head for high density recording
US5843565A (en) * 1996-10-31 1998-12-01 Ampex Corporation Particulate magnetic medium utilizing keeper technology and methods of manufacture
US5999379A (en) * 1997-12-11 1999-12-07 International Business Machines Corporation Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making
JP2000276716A (ja) * 1999-03-24 2000-10-06 Nec Corp 磁気抵抗効果型ヘッドおよびその製造方法および磁気記憶装置
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Also Published As

Publication number Publication date
US5401542A (en) 1995-03-28
DE3905625C2 (de) 1995-12-07
DE3905625A1 (de) 1989-08-31
JP2613239B2 (ja) 1997-05-21
JPH01217719A (ja) 1989-08-31
KR920002607B1 (ko) 1992-03-30
US5337203A (en) 1994-08-09
US5010433A (en) 1991-04-23

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