ES2177227T3 - Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia. - Google Patents
Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia.Info
- Publication number
- ES2177227T3 ES2177227T3 ES99902633T ES99902633T ES2177227T3 ES 2177227 T3 ES2177227 T3 ES 2177227T3 ES 99902633 T ES99902633 T ES 99902633T ES 99902633 T ES99902633 T ES 99902633T ES 2177227 T3 ES2177227 T3 ES 2177227T3
- Authority
- ES
- Spain
- Prior art keywords
- magnetorresistencia
- tunnel effect
- layer
- magnetic receiver
- magnetic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Abstract
Magnetorresistencia de efecto túnel que comprende, bajo la forma de un apilamiento: 5 - una primera capa (12) de material magnético de imantación libre, - una capa (16), llamada de barrera, de un material aislante eléctrico, y - una segunda capa (14) de material magnético de imantación atrapada, caracterizada porque la primera capa (12) de material magnético presenta un espesor inferior o igual a 7 nm.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9801616A FR2774774B1 (fr) | 1998-02-11 | 1998-02-11 | Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2177227T3 true ES2177227T3 (es) | 2002-12-01 |
Family
ID=9522845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES99902633T Expired - Lifetime ES2177227T3 (es) | 1998-02-11 | 1999-02-10 | Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia. |
Country Status (7)
Country | Link |
---|---|
US (1) | US6462641B1 (es) |
EP (1) | EP1055259B1 (es) |
JP (1) | JP2002503887A (es) |
DE (1) | DE69901790T2 (es) |
ES (1) | ES2177227T3 (es) |
FR (1) | FR2774774B1 (es) |
WO (1) | WO1999041792A1 (es) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2814592B1 (fr) * | 2000-09-26 | 2003-01-03 | Commissariat Energie Atomique | Dispositif a vanne de spin a reflexion electronique speculaire dependant du spin |
US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
FR2817999B1 (fr) * | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
US6771473B2 (en) * | 2001-01-22 | 2004-08-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive element and method for producing the same |
US6847509B2 (en) | 2001-02-01 | 2005-01-25 | Kabushiki Kaisha Toshiba | Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus |
JP2002359413A (ja) * | 2001-05-31 | 2002-12-13 | National Institute Of Advanced Industrial & Technology | 強磁性トンネル磁気抵抗素子 |
EP1391942A4 (en) * | 2001-05-31 | 2007-08-15 | Nat Inst Of Advanced Ind Scien | TUNNEL MAGNETIC RESISTANCE ELEMENT |
JP4184668B2 (ja) * | 2002-01-10 | 2008-11-19 | 富士通株式会社 | Cpp構造磁気抵抗効果素子 |
US6638774B2 (en) * | 2002-01-15 | 2003-10-28 | Infineon Technologies, Ag | Method of making resistive memory elements with reduced roughness |
JP2003218425A (ja) | 2002-01-18 | 2003-07-31 | Hitachi Ltd | 有限電圧下で高磁気抵抗率を示す強磁性トンネル接合素子、および、それを用いた強磁気抵抗効果型ヘッド、磁気ヘッドスライダ、ならびに磁気ディスク装置 |
JP3836788B2 (ja) * | 2002-12-26 | 2006-10-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気抵抗効果型ヘッドおよび磁気記録再生装置 |
DE10309244A1 (de) * | 2003-03-03 | 2004-09-23 | Siemens Ag | Magnetisches Speicherelement, insbesondere MRAM-Element, mit einem TMR-Dünnschichtensystem |
US6762954B1 (en) | 2003-05-09 | 2004-07-13 | Alan S. Edelstein | Local probe of magnetic properties |
US20080102320A1 (en) * | 2004-04-15 | 2008-05-01 | Edelstein Alan S | Non-erasable magnetic identification media |
US7397637B2 (en) * | 2004-08-30 | 2008-07-08 | Hitachi Global Storage Technologies Netherlands B.V. | Sensor with in-stack bias structure providing enhanced magnetostatic stabilization |
US7324312B2 (en) * | 2004-08-30 | 2008-01-29 | Hitachi Global Storage Technologies Netherlands B.V. | Sensor with in-stack bias structure providing exchange stabilization |
US7233142B1 (en) | 2004-09-02 | 2007-06-19 | United States Of America As Represented By The Secretary Of The Army | Planer reader of non-erasable magnetic media and local permeability |
US7394624B2 (en) * | 2005-02-23 | 2008-07-01 | Hitachi Global Storage Technologies Netherlands B.V. | Read sensor with a uniform longitudinal bias stack |
US7606007B2 (en) * | 2006-02-17 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Shield stabilization for magnetoresistive sensors |
US20070211392A1 (en) * | 2006-03-08 | 2007-09-13 | Zeltser Alexander M | Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn |
EP2065886A1 (en) * | 2007-11-27 | 2009-06-03 | Hitachi Ltd. | Magnetoresistive device |
CN102478546B (zh) * | 2010-11-30 | 2015-11-18 | 北京德锐磁星科技有限公司 | 微机电磁性生物传感器 |
JP5739685B2 (ja) * | 2011-02-14 | 2015-06-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
US8884616B2 (en) * | 2011-06-22 | 2014-11-11 | Infineon Technologies Ag | XMR angle sensors |
US9030780B2 (en) | 2012-08-08 | 2015-05-12 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for reading a non-volatile memory using a spin torque oscillator |
US9245617B2 (en) | 2013-12-17 | 2016-01-26 | The United States Of America As Represented By The Secretary Of The Army | Nonvolatile memory cells programable by phase change and method |
US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9812637B2 (en) | 2015-06-05 | 2017-11-07 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
FR3054364B1 (fr) * | 2016-07-20 | 2018-08-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Aimant permanent comprenant un empilement de n motifs |
US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2248566B1 (es) * | 1973-10-23 | 1976-11-19 | Cii | |
DE3820475C1 (es) | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
EP0672303B1 (en) * | 1993-10-06 | 1997-12-03 | Koninklijke Philips Electronics N.V. | Magneto-resistance device, and magnetic head employing such a device |
US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
FR2743930B1 (fr) * | 1996-01-19 | 2000-04-07 | Fujitsu Ltd | Capteur magnetique pour lecture de supports d'enregistrement |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
KR100262282B1 (ko) * | 1996-04-30 | 2000-10-02 | 니시무로 타이죠 | 자기 저항 효과 소자 |
KR100466975B1 (ko) * | 1996-05-28 | 2005-07-01 | 가부시키가이샤 시마쓰세사쿠쇼 | 자기저항효과소자, 자기저항효과형헤드, 메모리소자 및 그 제조방법 |
-
1998
- 1998-02-11 FR FR9801616A patent/FR2774774B1/fr not_active Expired - Fee Related
-
1999
- 1999-02-10 WO PCT/FR1999/000289 patent/WO1999041792A1/fr not_active Application Discontinuation
- 1999-02-10 US US09/601,722 patent/US6462641B1/en not_active Expired - Fee Related
- 1999-02-10 ES ES99902633T patent/ES2177227T3/es not_active Expired - Lifetime
- 1999-02-10 JP JP2000531875A patent/JP2002503887A/ja active Pending
- 1999-02-10 EP EP99902633A patent/EP1055259B1/fr not_active Revoked
- 1999-02-10 DE DE69901790T patent/DE69901790T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6462641B1 (en) | 2002-10-08 |
JP2002503887A (ja) | 2002-02-05 |
FR2774774A1 (fr) | 1999-08-13 |
WO1999041792A1 (fr) | 1999-08-19 |
FR2774774B1 (fr) | 2000-03-03 |
DE69901790D1 (de) | 2002-07-18 |
EP1055259A1 (fr) | 2000-11-29 |
DE69901790T2 (de) | 2003-02-06 |
EP1055259B1 (fr) | 2002-06-12 |
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