IN191436B - - Google Patents
Info
- Publication number
- IN191436B IN191436B IN755CA1997A IN191436B IN 191436 B IN191436 B IN 191436B IN 755CA1997 A IN755CA1997 A IN 755CA1997A IN 191436 B IN191436 B IN 191436B
- Authority
- IN
- India
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10906896 | 1996-04-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN191436B true IN191436B (ko) | 2003-12-06 |
Family
ID=14500792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN755CA1997 IN191436B (ko) | 1996-04-30 | 1997-04-29 |
Country Status (7)
Country | Link |
---|---|
US (2) | US5949622A (ko) |
KR (1) | KR100262282B1 (ko) |
CN (1) | CN1083597C (ko) |
IN (1) | IN191436B (ko) |
MY (1) | MY121610A (ko) |
SG (1) | SG47223A1 (ko) |
TW (1) | TW367493B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114863952A (zh) * | 2021-02-04 | 2022-08-05 | 昭和电工株式会社 | 磁记录介质、磁记录再生装置及磁记录介质的制造方法 |
Families Citing this family (75)
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US5923503A (en) * | 1995-03-15 | 1999-07-13 | Alps Electric Co., Ltd. | Thin-film magnetic head and production method thereof |
US6690553B2 (en) | 1996-08-26 | 2004-02-10 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus |
JP3730366B2 (ja) * | 1997-07-03 | 2006-01-05 | 株式会社東芝 | 薄膜磁気素子 |
JP3833362B2 (ja) * | 1997-10-01 | 2006-10-11 | 富士通株式会社 | 磁気抵抗効果型ヘッド |
FR2774774B1 (fr) * | 1998-02-11 | 2000-03-03 | Commissariat Energie Atomique | Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance |
US6639764B2 (en) * | 1998-07-21 | 2003-10-28 | Alps Electric Co., Ltd. | Spin-valve magnetoresistive thin film element |
DE19840823C1 (de) * | 1998-09-07 | 2000-07-13 | Siemens Ag | Magnetoresistives Element und dessen Verwendung als Speicherelement in einer Speicherzellenanordnung |
US6446099B1 (en) | 1998-09-30 | 2002-09-03 | Ricoh Co., Ltd. | Document matching using structural information |
US6542342B1 (en) * | 1998-11-30 | 2003-04-01 | Nec Corporation | Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer |
US6348274B1 (en) * | 1998-12-28 | 2002-02-19 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic recording apparatus |
CN1183545C (zh) * | 1999-02-26 | 2005-01-05 | 因芬尼昂技术股份公司 | 存储元件装置及其制造方法 |
US6567246B1 (en) * | 1999-03-02 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element |
US6219274B1 (en) * | 1999-06-08 | 2001-04-17 | Tdk Corporation | Ferromagnetic tunnel magnetoresistance effect element and method of producing the same |
WO2001007926A1 (en) * | 1999-07-22 | 2001-02-01 | Koninklijke Philips Electronics N.V. | Method of manufacturing a magnetic tunnel junction device |
JP3331397B2 (ja) * | 1999-07-23 | 2002-10-07 | ティーディーケイ株式会社 | トンネル磁気抵抗効果素子 |
KR100373473B1 (ko) | 1999-09-24 | 2003-02-25 | 가부시끼가이샤 도시바 | 자기 저항 효과 소자, 자기 저항 효과 헤드, 자기 재생장치 및 자성 적층체 |
US6430013B1 (en) * | 1999-12-06 | 2002-08-06 | International Business Machines Corporation | Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer |
WO2001056090A1 (fr) * | 2000-01-28 | 2001-08-02 | Sharp Kabushiki Kaisha | Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance |
US6721149B1 (en) * | 2000-02-11 | 2004-04-13 | Western Digital (Fremont), Inc. | Tunneling magnetoresistance spin-valve read sensor with LaNiO3 spacer |
WO2001071713A1 (en) * | 2000-03-22 | 2001-09-27 | Nve Corporation | Read heads in planar monolithic integrated circuit chips |
JP2001345495A (ja) | 2000-05-30 | 2001-12-14 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
JP2001358380A (ja) | 2000-06-13 | 2001-12-26 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
US6473278B1 (en) | 2000-07-31 | 2002-10-29 | International Business Machines Corporation | Giant magnetoresistive sensor with a high resistivity free layer |
US6538859B1 (en) | 2000-07-31 | 2003-03-25 | International Business Machines Corporation | Giant magnetoresistive sensor with an AP-coupled low Hk free layer |
US7144484B2 (en) * | 2000-08-15 | 2006-12-05 | Seagate Technology Llc | Ion mill shutter system |
US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
US6544801B1 (en) * | 2000-08-21 | 2003-04-08 | Motorola, Inc. | Method of fabricating thermally stable MTJ cell and apparatus |
US6853520B2 (en) * | 2000-09-05 | 2005-02-08 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
JP4693292B2 (ja) | 2000-09-11 | 2011-06-01 | 株式会社東芝 | 強磁性トンネル接合素子およびその製造方法 |
US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
JP3498737B2 (ja) * | 2001-01-24 | 2004-02-16 | ヤマハ株式会社 | 磁気センサの製造方法 |
US7289303B1 (en) | 2001-04-05 | 2007-10-30 | Western Digital (Fremont), Llc | Spin valve sensors having synthetic antiferromagnet for longitudinal bias |
US6614630B2 (en) * | 2001-04-23 | 2003-09-02 | Headway Technologies, Inc. | Top spin valve heads for ultra-high recording density |
US6836392B2 (en) * | 2001-04-24 | 2004-12-28 | Hitachi Global Storage Technologies Netherlands, B.V. | Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems |
KR100407907B1 (ko) * | 2001-05-15 | 2003-12-03 | 한국과학기술연구원 | 자기 터널 접합 소자의 열처리 방법과 그 방법으로 제조된자기 터널 접합 소자 |
JP3590006B2 (ja) * | 2001-06-22 | 2004-11-17 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6890230B2 (en) | 2001-08-28 | 2005-05-10 | Motorola, Inc. | Method for activating nanotubes as field emission sources |
US20030072970A1 (en) * | 2001-10-05 | 2003-04-17 | Headway Technologies, Inc. | Layered structure for magnetic recording heads |
KR20030073600A (ko) * | 2002-03-12 | 2003-09-19 | 학교법인고려중앙학원 | 스핀밸브형 자기저항소자 |
JP3749873B2 (ja) * | 2002-03-28 | 2006-03-01 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
EP1505609A4 (en) * | 2002-05-10 | 2006-05-03 | Japan Science & Tech Agency | SOFT MAGNETIC MATERIAL WITH HIGH SATURATION MAGNET FLOW DENSITY |
US7426097B2 (en) * | 2002-07-19 | 2008-09-16 | Honeywell International, Inc. | Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces |
US6881993B2 (en) * | 2002-08-28 | 2005-04-19 | Micron Technology, Inc. | Device having reduced diffusion through ferromagnetic materials |
US6882510B2 (en) * | 2002-09-24 | 2005-04-19 | Hitachi Global Storage Technologies Netherlands, B.V. | Low cost anti-parallel pinned spin valve (SV) and magnetic tunnel junction (MTJ) structures with high thermal stability |
US7038889B2 (en) * | 2002-09-30 | 2006-05-02 | International Business Machines Corporation | Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer |
KR20040105187A (ko) * | 2003-06-05 | 2004-12-14 | 학교법인고려중앙학원 | 비정질 코발트-나이오븀-지르코늄 합금과 나노산화층을사용한 자기터널접합 |
JP4244312B2 (ja) * | 2003-10-02 | 2009-03-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
DE10350161A1 (de) * | 2003-10-28 | 2005-06-09 | Infineon Technologies Ag | Magnetoresistive Speicherzelle und Verfahren zu deren Herstellung |
US20060042938A1 (en) * | 2004-09-01 | 2006-03-02 | Heraeus, Inc. | Sputter target material for improved magnetic layer |
US7251110B2 (en) * | 2005-01-18 | 2007-07-31 | Hitachi Global Storage Technologies Netherlands B.V. | GMR sensor having layers treated with nitrogen for increased magnetoresistance |
US20060286414A1 (en) * | 2005-06-15 | 2006-12-21 | Heraeus, Inc. | Enhanced oxide-containing sputter target alloy compositions |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
JP4786331B2 (ja) * | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
KR100773544B1 (ko) * | 2006-02-09 | 2007-11-05 | 삼성전자주식회사 | 확산 방지층을 포함하는 자기 저항 소자 |
JP4514721B2 (ja) | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
US20070253103A1 (en) * | 2006-04-27 | 2007-11-01 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
JP2007299880A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
JP2008085220A (ja) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置 |
JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
US7957179B2 (en) * | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
JP4538614B2 (ja) * | 2007-10-12 | 2010-09-08 | 株式会社東芝 | 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法 |
US7894248B2 (en) | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
JP5032429B2 (ja) * | 2008-09-26 | 2012-09-26 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5032430B2 (ja) * | 2008-09-26 | 2012-09-26 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
US8648589B2 (en) * | 2009-10-16 | 2014-02-11 | HGST Netherlands B.V. | Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys |
US8351151B2 (en) * | 2010-11-02 | 2013-01-08 | Hitachi Global Storage Technologies Netherlands B.V. | Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip |
US9099115B2 (en) * | 2013-11-12 | 2015-08-04 | HGST Netherlands B.V. | Magnetic sensor with doped ferromagnetic cap and/or underlayer |
JP2015179779A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 歪検出素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル |
CN112864309B (zh) * | 2019-11-12 | 2022-11-08 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及其磁性随机存储器 |
CN111996493B (zh) * | 2020-07-08 | 2021-10-15 | 中国科学院西安光学精密机械研究所 | 一种提高各向异性磁电阻磁阻率的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
JP2784457B2 (ja) * | 1993-06-11 | 1998-08-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ装置 |
EP0676746B1 (en) * | 1994-03-09 | 1999-08-04 | Eastman Kodak Company | Spin-valve dual magnetoresistive reproduce head |
EP0677750A3 (en) * | 1994-04-15 | 1996-04-24 | Hewlett Packard Co | Giant magnetoresistive sensor with an insulating pinning layer. |
US5648885A (en) * | 1995-08-31 | 1997-07-15 | Hitachi, Ltd. | Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer |
-
1997
- 1997-04-28 TW TW086105559A patent/TW367493B/zh not_active IP Right Cessation
- 1997-04-28 KR KR1019970015806A patent/KR100262282B1/ko not_active IP Right Cessation
- 1997-04-29 SG SG1997001345A patent/SG47223A1/en unknown
- 1997-04-29 US US08/848,262 patent/US5949622A/en not_active Expired - Lifetime
- 1997-04-29 IN IN755CA1997 patent/IN191436B/en unknown
- 1997-04-29 MY MYPI97001872A patent/MY121610A/en unknown
- 1997-04-30 CN CN97110841A patent/CN1083597C/zh not_active Expired - Fee Related
-
1999
- 1999-05-18 US US09/313,767 patent/US6111729A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114863952A (zh) * | 2021-02-04 | 2022-08-05 | 昭和电工株式会社 | 磁记录介质、磁记录再生装置及磁记录介质的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
MY121610A (en) | 2006-02-28 |
KR970071484A (ko) | 1997-11-07 |
TW367493B (en) | 1999-08-21 |
US5949622A (en) | 1999-09-07 |
CN1083597C (zh) | 2002-04-24 |
CN1167310A (zh) | 1997-12-10 |
US6111729A (en) | 2000-08-29 |
KR100262282B1 (ko) | 2000-10-02 |
SG47223A1 (en) | 1998-03-20 |