KR970067700A - 반도체 소자 제조 방법 - Google Patents

반도체 소자 제조 방법 Download PDF

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Publication number
KR970067700A
KR970067700A KR1019960009076A KR19960009076A KR970067700A KR 970067700 A KR970067700 A KR 970067700A KR 1019960009076 A KR1019960009076 A KR 1019960009076A KR 19960009076 A KR19960009076 A KR 19960009076A KR 970067700 A KR970067700 A KR 970067700A
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KR
South Korea
Prior art keywords
semiconductor device
metal layer
insulating film
sog film
device manufacturing
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Application number
KR1019960009076A
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English (en)
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KR100217905B1 (ko
Inventor
윤종윤
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960009076A priority Critical patent/KR100217905B1/ko
Publication of KR970067700A publication Critical patent/KR970067700A/ko
Application granted granted Critical
Publication of KR100217905B1 publication Critical patent/KR100217905B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 절연막으로 사용되는 SOG막을 도포한 후, 이온 주입 공정으로 SOG막 내부에 잔존하는 불순물을 제거하므로서, 수분 발생의 원인이 되는 Si-CH3및 메틸이 주입 에너지에 의해 파괴되어 수분 발생이 억제되는 효과를 가져오게 되며 이 결과로 인해 금속이 증착될 때 스텝 커버리지가 향상되고, 소자의 특성 및 수율 향상을 가져올 수 있는 반도체 소자 제조 방법이 개시된다.

Description

반도체 소자 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 내지 1C도는 본 발명에 따른 반도체 소자 제조 방법을 설명하기 위한 단면도

Claims (3)

  1. 반도체 소자 제조방법에 있어서, 실리콘 기판상에 제1층간 절연막, 제1금속층, 제2층간 절연막 및 SOG막을 순차적으로 증착하는 단계와; 상기 SOG막을 큐링 한 후, 이온 주입 공정을 실시하여 막내부의 불순물을 제거하는 단계와, 상기 전체 구조 상부에 제3층간 절연막을 증착한 후, 상기 제1금속층이 노출되도록 콘택홀을 형성하는 단계와, 상기 콘택홀이 형성된 전체 구조 상부에 제2금속층을 형성하는 것을 특징으로 하는 반도체 소자 제조 방법.
  2. 제1항에 있어서, 상기 SOG막의 큐링 공정은 400 내지 450℃의 온도로 1시간 동안 실시하는 것을 특징으로 하는 반도체 소자 제조 방법.
  3. 제1항에있어서, 상기 SOG막의 이온 주입 공정에서는 소오스에 상관없이 그 에너지가 30Kev이상, 도우즈는 1E14 이상으로 실시하는 것을 특징으로 하는 반도체 소자 제조 방법.
KR1019960009076A 1996-03-29 1996-03-29 반도체 소자 제조 방법 KR100217905B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960009076A KR100217905B1 (ko) 1996-03-29 1996-03-29 반도체 소자 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960009076A KR100217905B1 (ko) 1996-03-29 1996-03-29 반도체 소자 제조 방법

Publications (2)

Publication Number Publication Date
KR970067700A true KR970067700A (ko) 1997-10-13
KR100217905B1 KR100217905B1 (ko) 1999-09-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009076A KR100217905B1 (ko) 1996-03-29 1996-03-29 반도체 소자 제조 방법

Country Status (1)

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Publication number Publication date
KR100217905B1 (ko) 1999-09-01

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