KR970058390A - 플라즈마 처리장치의 챔버 에칭방법 및 그를 실시하기 위한 플라즈마 처리 장치 - Google Patents

플라즈마 처리장치의 챔버 에칭방법 및 그를 실시하기 위한 플라즈마 처리 장치 Download PDF

Info

Publication number
KR970058390A
KR970058390A KR1019960063831A KR19960063831A KR970058390A KR 970058390 A KR970058390 A KR 970058390A KR 1019960063831 A KR1019960063831 A KR 1019960063831A KR 19960063831 A KR19960063831 A KR 19960063831A KR 970058390 A KR970058390 A KR 970058390A
Authority
KR
South Korea
Prior art keywords
chamber
electrode
processing apparatus
substrate electrode
counter electrode
Prior art date
Application number
KR1019960063831A
Other languages
English (en)
Other versions
KR100260775B1 (ko
Inventor
앨런 헤이그 존
앨런 크라나웨터 그렉
헨리 윌리스 도날드
다쓰야 우사미
Original Assignee
프랭크 와이. 리아오
톰슨 콘슈머 일렉트로닉스 인코오포레이티드
가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프랭크 와이. 리아오, 톰슨 콘슈머 일렉트로닉스 인코오포레이티드, 가네꼬 히사시, 닛뽕덴끼 가부시끼가이샤 filed Critical 프랭크 와이. 리아오
Publication of KR970058390A publication Critical patent/KR970058390A/ko
Application granted granted Critical
Publication of KR100260775B1 publication Critical patent/KR100260775B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

기판전극과 카운터 전극 사이에 고주파전압을 인가시켜 플라즈마를 발생시켜 웨이퍼상에 이산화실리콘막을 형성하기 위해 플라즈마 CVD 처리후 플라즈마 처리장치를 플라즈마 에칭세정 하는데 있어서, 기판전극이 주변 외주부를 피복하도록 놓인 탄화실리콘 절연덮개를 가지며, 카운터전극이 접지되며, 탄화불소 가스가 챔버로 도입되며, 기판전극은 고주파전원이 공급되어 챔버에칭을 실시하여 플라즈마 CVD 처리에 의해 챔버내에 형성된 바람직하지 않은 이산화실리콘을 제거한다.

Description

플라즈마 처리장치의 챔버 에칭방법 및 그를 실시하기 위한 플라즈마 처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예 1에 따른 플라즈마 처리장치의 개략단면도.

Claims (9)

  1. 시료 웨이퍼를 지지하는 기판전극, 상기 기판전극의 주변 외주부를 피복하도록 놓인 탄화실리콘 절연덮개, 및 챔버내에서 상기 기판전극과 대면하는 카운터전극을 구비하며, 이산화실리콘층이 상기 챔버내에서 플라즈마 반응 가스를 사용하여 CVD처리에 의해 상기 웨이퍼상에서 형성되며, 상기 이산화 실리콘층은 상기 절연덮개 및 상기 전극을 포함하는 상기 챔버내에서 소자의 표면상에 바람직하지 않은 이산화실리콘층으로서 또한 형성되는 플라즈마 처리장치를 챔버에칭하는 방법으로서, 상기 방법은 상기 소자의 표면상의 상기 바람직하지 않은 이산화실리콘층을 제거하기 위한 것이며, 상기 기판전극을 고주파 전원에 접속시키고 상기 카운터전극을 접지시키는 단계와, 상기 챔버에 탄화불소가스를 도입하는 단계, 및 상기 고주파전원으로부터 상기 기판전극에 고주파 전력을 공급하여 상기 챔버에칭을 실시하여 상기 바람직하지 않은 이산화실리콘층을 제거하는 단계를 구비하는 것을 특징으로 하는 플라즈마 처리장치의 쳄버에칭방법.
  2. 가스를 도입하기 위한 가스 도입구 및 배출가스를 방출하기 위한 가스배출구를 가지며, 상기 플라즈마 CVD 동안은 상기 가스 도입구가 반응가스를 도입하여 상기 이산화실리콘을 형성하며 상기 챔버에칭동안은 상기 가스 도입구가 탄화불호가스를 도입하는 챔버, 상기 챔버 외부에 노출된 기판전극단자를 가지며, 플라즈마 CVD 처리동안 웨이퍼가 기판전극의 표면 중앙부에 놓여 지지되며, 상기 챔버내에서 고정되는 기판전극, 상기 기판전극의 주변 외주부에 고정된 탄화실리콘 절연덮개, 소정의 간격을 두고 상기 기판전극에 대면하며 상기 챔버의 외부에 노출된 카운터전극 단자를 갖는 카운터전극, 고주파 전기에너지를 공급하는 전원, 및 상기 기판전극단자와 상기 카운터전극 중 한 개를 상기 전원에 접속하며 남아있는 전극단자를 접지시켜 상기 플라즈마 CVD 처리동안은 상기 전원이 상기 카운터전극에 상기 고주파 전기에너지를 공급하며, 상기 챔버에칭동안은 상기 전원이 상기 기판전극에 상기 고주파 전기에너지를 공급하는 전원 스위칭수단을 구비하는 것을 특징으로 하는 플라즈마 CVD 처리에 의해 웨이퍼상에 이산화실리콘층을 형성할 때 사용되며 제1항의 방법을 실시하기 위한 플라즈마 처리장치.
  3. 가스를 도입하기 위한 가스 도입구 및 배출가스를 방출하기 위한 가스배출구를 가지며, 상기 플라즈마 CVD 처리 동안은 상기 가스 도입구가 반응가스를 도입하여 상기 이산화실리콘을 형성하며 상기 챔버에칭동안은 상기 가스도입구가 탄화불소가스를 도입하는 챔버, 상기 챔버 외부에 노출된 기판전극단자를 가지며, 플라즈마 CVD 처리동안 웨이퍼가 상기 기판전극의 표면 중앙부에 놓여 지지되며, 상기 챔버내에서 고정되는 기판전극, 상기 기판전극의 주변 외주부에 고정된 탄화실리콘 절연덮개, 소정의 간격을 두고 상기 기판전극에 대면하며 상기 챔버외부에 노출된 카운터전극단자를 갖는 카운터전극, 제1고주파 전지에너지를 공급하는 제1전원, 제2고주파 고주파 전지에너지를 공급하는 제2전원, 상기 플라즈마 CVD 처리동안은 상기 기판전극단자를 상기 접지에 접속하여 상기 기판전극을 접지시키며 상기 챔버에칭동안은 상기 제1전원을 상기 기판전극단자에 접속하는 제1전원 스위칭수단, 및 상기 플라즈마 CVD 처리동안은 상기 제2전원을 상기 카운터전극에 접속하며 상기 챔버에칭동안은 상기 카운터전극 단자를 접지에 접속시켜 상기 카운터전극단자를 접지시키는 제2전원 스위칭수단을 구비하는 것을 특징으로 하는 플라즈마 CVD 처리에 의해 웨이퍼상에 이산화실리콘층을 형성할 때 사용되며 제1항의 방법을 실시하기 위한 플라즈마 처리장치.
  4. 제2항에 있어서, 상기 카운터전극은 탄화실리콘으로 형성된 외주부를 갖는 것을 특징으로 하는 플라즈마 처리장치.
  5. 제2항에 있어서, 상기 혼형의 카운터전극을 갖는 전자 사이클로트론공명형인 것을 특징으로 하는 플라즈마 처리장치.
  6. 제2항에 있어서, 상기 기판전극 및 상기 카운터전극은 서로 평행하게 놓인 평행한 평판전극인 평판전극형인 것을 특징으로 하는 플라즈마 처리장치.
  7. 제3항에 있어서, 상기 카운터전극은 탄화실리콘으로 형성된 외주부를 갖는 것을 특징으로 하는 플라즈마 처리장치.
  8. 제3항에 있어서, 상기 혼형의 카운터 전극을 갖는 전자 사이클로트론 공명형인 것을 특징으로 하는 플라즈마 처리장치.
  9. 제3항에 있어서, 상기 기판전극 및 상기 카운터전극은 서로 평행하게 놓인 평행한 평판전극인 평판전극형인 것을 특징으로 하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960063831A 1995-12-15 1996-12-10 플라즈마처리장치 KR100260775B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP95-327701 1995-12-15
JP7327701A JPH09167755A (ja) 1995-12-15 1995-12-15 プラズマ酸化膜処理装置
US08/580,725 1995-12-29

Publications (2)

Publication Number Publication Date
KR970058390A true KR970058390A (ko) 1997-07-31
KR100260775B1 KR100260775B1 (ko) 2000-08-01

Family

ID=18202020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960063831A KR100260775B1 (ko) 1995-12-15 1996-12-10 플라즈마처리장치

Country Status (6)

Country Link
US (2) US5863339A (ko)
JP (1) JPH09167755A (ko)
KR (1) KR100260775B1 (ko)
CN (1) CN1118086C (ko)
GB (1) GB2308231B (ko)
TW (1) TW328138B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368182B1 (ko) * 1999-12-16 2003-01-24 사단법인 고등기술연구원 연구조합 저전압 클라이스트로드 발진관을 이용한 플라즈마 방전장치

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6112697A (en) * 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US6395128B2 (en) 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US20030127190A1 (en) * 1998-12-30 2003-07-10 Kenneth G. Flugaur Channel sleeve, improved plasma processing chamber containing channel sleeve, and methods of making and using the same
US20050061445A1 (en) * 1999-05-06 2005-03-24 Tokyo Electron Limited Plasma processing apparatus
KR100880767B1 (ko) * 1999-05-06 2009-02-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US6444083B1 (en) * 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
US6544895B1 (en) * 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) * 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
JP4034543B2 (ja) * 2001-09-25 2008-01-16 東京エレクトロン株式会社 プラズマ処理装置用石英部材の加工方法，プラズマ処理装置用石英部材およびプラズマ処理装置用石英部材が実装されたプラズマ処理装置
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
DE10224137A1 (de) * 2002-05-24 2003-12-04 Infineon Technologies Ag Ätzgas und Verfahren zum Trockenätzen
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6932092B2 (en) * 2002-11-22 2005-08-23 Applied Materials, Inc. Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy
JP4846190B2 (ja) * 2003-05-16 2011-12-28 東京エレクトロン株式会社 プラズマ処理装置およびその制御方法
US7604841B2 (en) * 2004-03-31 2009-10-20 Tokyo Electron Limited Method for extending time between chamber cleaning processes
US20060011213A1 (en) * 2004-04-28 2006-01-19 Tokyo Electron Limited Substrate transfer device and cleaning method thereof and substrate processing system and cleaning method thereof
JP4919871B2 (ja) * 2007-02-09 2012-04-18 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法および記憶媒体
JP4909929B2 (ja) * 2007-04-18 2012-04-04 パナソニック株式会社 分圧測定方法および分圧測定装置
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
CN101126148B (zh) * 2007-07-27 2010-04-21 北京印刷学院 一种具有阻隔兼防护功能的纳米薄膜及其制做方法
JP5228437B2 (ja) * 2007-10-19 2013-07-03 東京エレクトロン株式会社 処理装置及びその使用方法
JP5211332B2 (ja) * 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
EP2382648B1 (en) * 2008-12-23 2016-10-05 Oerlikon Advanced Technologies AG Rf sputtering arrangement
JP5857344B2 (ja) * 2010-07-27 2016-02-10 株式会社ユーテック プラズマポーリング装置及び圧電体の製造方法
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6086862B2 (ja) * 2013-08-30 2017-03-01 東京エレクトロン株式会社 酸化シリコンから構成された領域を選択的に除去する方法及びプラズマ処理装置
US10163656B2 (en) * 2013-11-16 2018-12-25 Applied Materials, Inc. Methods for dry etching cobalt metal using fluorine radicals
US9840777B2 (en) * 2014-06-27 2017-12-12 Applied Materials, Inc. Apparatus for radical-based deposition of dielectric films
US9773643B1 (en) * 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
JP2019114692A (ja) * 2017-12-25 2019-07-11 東京エレクトロン株式会社 成膜方法
KR20210150606A (ko) 2019-05-01 2021-12-10 램 리써치 코포레이션 변조된 원자 층 증착

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPH0639709B2 (ja) * 1988-09-05 1994-05-25 日立電子エンジニアリング株式会社 プラズマｃｖｄ装置
EP0464696B1 (en) * 1990-06-29 1997-10-29 Applied Materials, Inc. Two-step reactor chamber self cleaning process
JP2598336B2 (ja) * 1990-09-21 1997-04-09 株式会社日立製作所 プラズマ処理装置
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
JP2949874B2 (ja) * 1990-11-21 1999-09-20 富士電機株式会社 Ｅｃｒプラズマｃｖｄ装置ドライクリーニングの方法
US5688330A (en) * 1992-05-13 1997-11-18 Ohmi; Tadahiro Process apparatus
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
JP3165322B2 (ja) * 1994-03-28 2001-05-14 東京エレクトロン株式会社 減圧容器
JP2956494B2 (ja) * 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368182B1 (ko) * 1999-12-16 2003-01-24 사단법인 고등기술연구원 연구조합 저전압 클라이스트로드 발진관을 이용한 플라즈마 방전장치

Also Published As

Publication number Publication date
TW328138B (en) 1998-03-11
US6099747A (en) 2000-08-08
CN1118086C (zh) 2003-08-13
GB2308231B (en) 2000-06-28
KR100260775B1 (ko) 2000-08-01
US5863339A (en) 1999-01-26
GB9625888D0 (en) 1997-01-29
JPH09167755A (ja) 1997-06-24
GB2308231A (en) 1997-06-18
CN1154644A (zh) 1997-07-16

Similar Documents

Publication Publication Date Title
KR970058390A (ko) 플라즈마 처리장치의 챔버 에칭방법 및 그를 실시하기 위한 플라즈마 처리 장치
US5006192A (en) Apparatus for producing semiconductor devices
JP4860087B2 (ja) エッチング方法
JP2000323460A5 (ko)
KR100488348B1 (ko) 플라즈마 프로세스 챔버 및 시스템
CN111883410B (zh) 批次型衬底处理设备
JPH02159027A (ja) プラズマ処理装置
JPH06333850A (ja) プラズマ処理装置
JPH10326772A (ja) ドライエッチング装置
JPH1027780A (ja) プラズマ処理方法
WO2019194540A1 (ko) 복합 rf 주파수를 사용하는 플라즈마 건식 세정 장치
JPS60123032A (ja) プラズマ処理方法および装置
JPH02228035A (ja) 真空処理装置
JPH05125541A (ja) プラズマ処理装置
JPH05299382A (ja) プラズマ処理装置およびその方法
JP4620322B2 (ja) プラズマ表面処理装置
JPS63221620A (ja) プラズマ処理方法及び装置
JPS58100430A (ja) プラズマ処理装置
JP2004031509A (ja) マイクロ波を用いた大気圧プラズマ処理方法及び装置
US20200350145A1 (en) Batch type substrate processing apparatus
JPH05326410A (ja) プラズマ処理装置
KR101262904B1 (ko) 플라즈마 식각 장치
JPS61177374A (ja) プラズマｃｖｄ装置及びプラズマｃｖｄによる成膜方法
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法
JPS62280372A (ja) プラズマ気相成長装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
J201 Request for trial against refusal decision
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030410

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee