KR970053006A - 바이폴라 트랜지스터의 제조방법 - Google Patents

바이폴라 트랜지스터의 제조방법 Download PDF

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KR970053006A
KR970053006A KR1019950068647A KR19950068647A KR970053006A KR 970053006 A KR970053006 A KR 970053006A KR 1019950068647 A KR1019950068647 A KR 1019950068647A KR 19950068647 A KR19950068647 A KR 19950068647A KR 970053006 A KR970053006 A KR 970053006A
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layer
conductivity type
material layer
etching
insulating
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KR1019950068647A
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KR0164521B1 (ko
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유승경
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

신규한 바이폴라 트랜지스터의 제조방법이 개시되어 있다. 반도체기판 상에 매몰절연층 및 실리콘층을 차례로 형성하여 실리콘-온 인슐레이터(SOI) 기판을 준비한 후, 그 위에 산화막, 식각저지층 및 제1물질층을 차례로 형성한다. 제1 물질층을 식각하여 베이스영역을 정의하고 제1 도전형 불순물을 이온주입한다. 노출된 식각저지층 및 산화막을 식각한다. 제1 도전형으로 도핑된 도전물질을 침적하고 이를 에치백하여 제1 도전형 베이스전극을 형성한다. 제1 물질층을 제거한다. 절연물질을 침적하고 이를 식각하여 제1 도전형 베이스전극의 측벽에 절연성 스페이서를 형성한다. 제2 도전형 불순물을 이온주입하여, 제1 도전형 베이스전극에 셀프-얼라인되는 제2 도전형 에미터 및 콜렉터를 형성한다. SOI 기술을 사용하는 CMOS 공정에 쉽게 삽입할 수 있으므로, 고속·저소비 전력·고집적의 BiCMOS 소자를 구현할 수 있다.

Description

바이폴라 트랜지스터의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 내지 제5도는 본 발명에 의한 SOI 구조의 횡형 NPN 바이폴라 트랜지스터의 제조방법을 설명하기 위한 단면도들.

Claims (6)

  1. 반도체기판 상에 매몰절연층 및 실리콘층을 차례로 형성하여 실리콘-온 인슐레이터(SOI) 기판을 준비하는 단계; 상기 실리콘-온-인슐레이터 기판 상에 산화막, 식각저지층 및 제1 물질층을 차례로 형성하는 단계; 상기 제1 물질층을 식각하여 베이스영역을 정의하고, 상기 베이스영역에 제1 도전형의 불순물을 이온주입하는 단계; 상기 노출된 식각저지층 및 산화막을 식각하는 단계; 상기 결과물 상에 제1 도전형으로 도핑된 도전물질을 침적하고 이를 에치백하여 제1 도전형의 베이스전극을 형성하는 단계; 상기 제1 물질층을 제거하는 단계; 상기 결과물 상에 절연물질을 침적하고 이를 식각하여 상기 제1 도전형의 베이스전극 측벽에 절연성 스페이서를 형성하는 단계; 및 상기 결과물에 제2 도전형의 불순물을 이온주입하여, 상기 제1 도전형의 베이스전극에 셀프-얼라인되는 제2 도전형의 에미터 및 콜렉터를 형성하는 단계를 구비하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
  2. 제1항에 있어서, 상기 식각저지층을 구성하는 물질로 폴리실리콘을 사용하고 상기 제1 물질층을 구성하는 물질로 저온산화물을 사용하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
  3. 제1항에 있어서, 상기 노출된 식각저지층 및 산화막을 식각하는 단계 전에, 상기 식각된 제1 물질층의 측벽에 제2 물질층으로 이루어진 측벽스페이서를 형성하는 단계를 더 구비하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
  4. 제3항에 있어서, 상기 제2 물질층을 구성하는 물질로 실리콘질화물을 사용하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
  5. 제3항에 있어서, 상기 제2 물질층으로 이루어진 측벽스페이서는 상기 제1 물질층을 제거하는 단계에서 함께 제거하는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
  6. 제1항에 있어서, 상기 절연성 스페이서를 형성하기 위한 식각공정시 상기 식각저지층이 함께 식각되는 것을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950068647A 1995-12-30 1995-12-30 바이폴라 트랜지스터의 제조방법 KR0164521B1 (ko)

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US6849871B2 (en) * 2000-10-20 2005-02-01 International Business Machines Corporation Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS

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