KR970018285A - 종형 열처리장치 - Google Patents

종형 열처리장치 Download PDF

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Publication number
KR970018285A
KR970018285A KR1019960038592A KR19960038592A KR970018285A KR 970018285 A KR970018285 A KR 970018285A KR 1019960038592 A KR1019960038592 A KR 1019960038592A KR 19960038592 A KR19960038592 A KR 19960038592A KR 970018285 A KR970018285 A KR 970018285A
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South Korea
Prior art keywords
heat treatment
treatment apparatus
support
vertical
substrate support
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KR1019960038592A
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English (en)
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KR100385818B1 (ko
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도모히사 시마즈
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히가시 데츠로우
도쿄 일렉트론 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명에 따른 종형 열처리장치는, 열처리로의 하단개구를 개폐하는 캡의 상부에 다수의 피처리기판을 수직간격으로 지지하는 기판지지체를 단열 구조체를 매개로 재치(載置)하고, 상기 피처리체를 노내의 균일한 열영역에서 열처리하는 종형 열처리장치에 있어서, 기판지지체를 지지하는 지주를 구비한 단열구조체와, 지주에 완만하게 삽입되고 지주에 의해 지지되는 삽입홀을 갖추고, 상기 지주의 높이방향에 소정 간격으로 스페이스에 의해 서로 분리된 얇은 복수개의 단열판으로 구성된다. 따라서 단열구조체는 구조를 간소화할 수 있고, 열용량을 감소시킬 수 있으며, 드로우풋이 향상될 수 있다.

Description

종형 열처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 종형 열처리장치의 주요부를 나타낸 단면도.

Claims (8)

  1. 열처리로의 균일한 열영역에서 피처리체의 열처리를 행하는 종형 열처리장치에 있어서, 열처리로의 하단개구를 개폐하는 캡과, 이 캡상에 재치된 단열구조체 및, 수직간격으로 단열판상의 복수의 피처리기판을 지지하는 기판지지체를 구비하여 구성되고, 상기 단열구조체가 기판지지체를 지지하는 복수의 직립 지주와, 이 지주가 삽입되는 삽입홀을 갖추고, 스페이서에 의해 소정의 수직간격으로 분리된 복수의 얇은 단열판으로 구성된 것을 특징으로 하는 종형 열처리장치.
  2. 제1항에 있어서, 상기 지주가 캡의 상단에 설치된 수신대에 재치되는 원형의 베이스를 갖추고, 상기 복수의 지주가 베이스에 직립상태로 설치된 것을 특징으로 하는 종형 열처리장치.
  3. 제1항에 있어서, 지주가 그 중앙에 중공부를 갖추고, 복수의 통기홀이 상기 지주의 한쪽 또는 양쪽에 형성된 것을 특징으로 하는 종형 열처리장치.
  4. 제1항에 있어서, 기판지지체의 하단이 지주의 상단에 계합되는 계합부를 갖추고 있는 것을 특징으로 하는 종형 열처리장치.
  5. 제1항에 있어서, 지주가 고체이고, 기판지지체의 내부에 계합되는 절단부를 갖추고 있는 것을 특징으로 하는 종형 열처리장치.
  6. 제1항에 있어서, 단열판이 CVD에 의해 형성된 탄화규소막으로 형성된 것을 특징으로 하는 종형 열처리 장치.
  7. 제1항에 있어서, 단열판이 기복부를 갖춘 단면형상으로 형성된 것을 특징으로 하는 종형 열처리장치.
  8. 제3항에 있어서, 기판지지체의 하단으로부터 돌출된 계합부가 지주의 중공부에 계합되는 것을 특징으로 하는 종형 열처리장치.
KR1019960038592A 1995-09-06 1996-09-06 종형열처리장치 KR100385818B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-254676 1995-09-06
JP25467695A JP3471144B2 (ja) 1995-09-06 1995-09-06 縦型熱処理装置及びその断熱構造体並びに遮熱板

Publications (2)

Publication Number Publication Date
KR970018285A true KR970018285A (ko) 1997-04-30
KR100385818B1 KR100385818B1 (ko) 2003-08-21

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US (1) US5709543A (ko)
JP (1) JP3471144B2 (ko)
KR (1) KR100385818B1 (ko)
TW (1) TW387092B (ko)

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JP4923667B2 (ja) * 2006-03-27 2012-04-25 株式会社デンソー Ｃｖｄ装置
JP4332550B2 (ja) * 2006-12-26 2009-09-16 株式会社日立国際電気 半導体装置の製造方法
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JP5222652B2 (ja) * 2008-07-30 2013-06-26 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5088331B2 (ja) * 2009-01-26 2012-12-05 東京エレクトロン株式会社 熱処理装置用の構成部品及び熱処理装置
KR101094643B1 (ko) * 2009-12-22 2011-12-20 주식회사 티씨케이 종형열처리장치의 단열판 및 그 제조방법
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
CN102732970B (zh) * 2012-07-16 2015-12-16 登封市蓝天石化光伏电力装备有限公司 一种晶体生长炉用隔热装置
JP6258726B2 (ja) * 2014-03-04 2018-01-10 東京エレクトロン株式会社 縦型熱処理装置
JP7065857B2 (ja) 2016-09-19 2022-05-12 キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー サセプター
JP6817911B2 (ja) * 2017-08-10 2021-01-20 東京エレクトロン株式会社 ウエハボート支持部、熱処理装置及び熱処理装置のクリーニング方法
FI130051B (en) 2019-04-25 2023-01-13 Beneq Oy DEVICE AND METHOD
DE102022002761A1 (de) * 2022-07-29 2024-02-01 centrotherm international AG Vorrichtung zur thermischen Behandlung von Substraten, insbesondere Halbleiter-Wafern

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Also Published As

Publication number Publication date
US5709543A (en) 1998-01-20
JPH0974071A (ja) 1997-03-18
JP3471144B2 (ja) 2003-11-25
TW387092B (en) 2000-04-11
KR100385818B1 (ko) 2003-08-21

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