KR920702016A - Cvd 장치를 위한 기판 지지장치 - Google Patents

Cvd 장치를 위한 기판 지지장치

Info

Publication number
KR920702016A
KR920702016A KR1019910700507A KR910700507A KR920702016A KR 920702016 A KR920702016 A KR 920702016A KR 1019910700507 A KR1019910700507 A KR 1019910700507A KR 910700507 A KR910700507 A KR 910700507A KR 920702016 A KR920702016 A KR 920702016A
Authority
KR
South Korea
Prior art keywords
opening
support
substrate
supporting
substrate support
Prior art date
Application number
KR1019910700507A
Other languages
English (en)
Other versions
KR950013428B1 (ko
Inventor
미쯔또시 슈또
야수시 후까자와
미노루 오사끼
Original Assignee
원본미기재
닛본 에이.에스.엠 가부시끼가이샤
닛본덴기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 닛본 에이.에스.엠 가부시끼가이샤, 닛본덴기 가부시끼가이샤 filed Critical 원본미기재
Publication of KR920702016A publication Critical patent/KR920702016A/ko
Application granted granted Critical
Publication of KR950013428B1 publication Critical patent/KR950013428B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

CVD장치를 위한 기판 지지장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 기판 지지구조의 일부 단면도, 제2도는 핫 월(got wall)형의 CVD 장치에 배치된 본 발명의 기판 지지 구조의 다른 실시예의 일부 단면도, 제3도는 종래의 기판 지지장치가 배치된 종형 항아리 모양의 CVD 장치의 개략 단면도.

Claims (2)

  1. 다수의 처리해야 할 기판 각각을 지지하는 평행으로 배열된 다수의 지지판을 갖는 기판 지지장치에 있어서, 상기 각 지지판이 그 중앙에 개구를 갖고 있고, 또 상기 기판을 상기 지지판에서 격리해서 상기 개구상에 지지하기 위한 다수의 클립을 개구의 주위에 구비하며, 상기 지지판의 개구의 크기가 2종류 이상인 것을 특징으로 하는 기판 지지장치.
  2. 다수의 기판상에 CVD에 의해 박막을 형성하는 CVD 장치에 있어서, 상기 다수의 기판 각각을 지지하는 평행으로 배열된 다수의 지지판을 갖는 기판 지지장치가 CVD 장치내에 설치되고, 상기 각 지지판이 그 중앙에 개구에 갖고 있고 또 상기 기판을 지지판에서 격리해서 개구상에서 지지하기 위한 복수의 클립을 개구의 주위에 구비하고, 상기 지지판의 개구의 크기가 2종류 이상인 것을 특징으로 하는 CVD장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910700507A 1989-09-21 1990-09-14 Cvd장치를 위한 기판 지지 장치 KR950013428B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1-109677 1989-09-21
JP1989109677U JPH06818Y2 (ja) 1989-09-21 1989-09-21 Ｃｖｄ装置のための基板支持装置
JP01-109677 1989-09-21
PCT/JP1990/001182 WO1991004572A1 (en) 1989-09-21 1990-09-14 Substrate support device for cvd apparatus

Publications (2)

Publication Number Publication Date
KR920702016A true KR920702016A (ko) 1992-08-12
KR950013428B1 KR950013428B1 (ko) 1995-11-08

Family

ID=14516382

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910700507A KR950013428B1 (ko) 1989-09-21 1990-09-14 Cvd장치를 위한 기판 지지 장치

Country Status (5)

Country Link
EP (1) EP0444205B1 (ko)
JP (1) JPH06818Y2 (ko)
KR (1) KR950013428B1 (ko)
DE (1) DE69024478T2 (ko)
WO (1) WO1991004572A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4426518B2 (ja) * 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
BR112014008177A2 (pt) * 2012-02-16 2017-04-11 Saint Gobain caixa de processo, arranjos, e métodos para processar substratos revestidos
JP5977274B2 (ja) * 2013-03-21 2016-08-24 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers
FR2251370B1 (ko) * 1973-11-15 1978-12-01 Radiotechnique Compelec
JPS5670830A (en) * 1979-11-10 1981-06-13 Toshiba Corp Vapor growth method
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
DD206687A3 (de) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
JPS58108735A (ja) * 1981-12-23 1983-06-28 Fujitsu Ltd 縦型反応管用バスケツト
JPS59117138U (ja) * 1983-01-27 1984-08-07 日本電気ホームエレクトロニクス株式会社 半導体製造装置
JPS6252929U (ko) * 1985-09-21 1987-04-02
JPS62142839U (ko) * 1986-03-04 1987-09-09
JP2568185B2 (ja) * 1987-01-23 1996-12-25 株式会社日立製作所 熱処理装置
JPS633155Y2 (ko) * 1987-03-12 1988-01-26
JPH0727870B2 (ja) * 1987-12-24 1995-03-29 東横化学株式会社 減圧気相成長方法

Also Published As

Publication number Publication date
WO1991004572A1 (en) 1991-04-04
EP0444205B1 (en) 1995-12-27
DE69024478T2 (de) 1996-07-04
EP0444205A4 (en) 1992-07-08
KR950013428B1 (ko) 1995-11-08
DE69024478D1 (de) 1996-02-08
JPH06818Y2 (ja) 1994-01-05
JPH0350324U (ko) 1991-05-16
EP0444205A1 (en) 1991-09-04

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