KR960026953A - 반도체장치의 게이트전극 및 그 형성방법 - Google Patents
반도체장치의 게이트전극 및 그 형성방법 Download PDFInfo
- Publication number
- KR960026953A KR960026953A KR1019940038281A KR19940038281A KR960026953A KR 960026953 A KR960026953 A KR 960026953A KR 1019940038281 A KR1019940038281 A KR 1019940038281A KR 19940038281 A KR19940038281 A KR 19940038281A KR 960026953 A KR960026953 A KR 960026953A
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- KR
- South Korea
- Prior art keywords
- forming
- metal layer
- gate electrode
- polycrystalline silicon
- barrier metal
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title claims abstract 7
- 239000002184 metal Substances 0.000 claims abstract 11
- 229910052751 metal Inorganic materials 0.000 claims abstract 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 10
- 230000004888 barrier function Effects 0.000 claims abstract 9
- 239000000758 substrate Substances 0.000 claims abstract 3
- 239000000463 material Substances 0.000 claims 6
- 238000002844 melting Methods 0.000 claims 4
- 230000008018 melting Effects 0.000 claims 4
- 229910016006 MoSi Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910019001 CoSi Inorganic materials 0.000 claims 1
- 230000001133 acceleration Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
3층구조의 게이트전극 및 그 형성방법에 관하여 기쟈되고 있다.
이는 반도체기판 상에 형성된 게이트산화막, 상기 게이트산화막 상에 형성된 다결정실리콘막, 상기 다결정실리콘막 상에 형성된 장벽급속층, 및 상기 장벽금속층 상에 형성된 저저항금속층을 포함하는 것을 특징으로 한다. 따라서 게이트전극의 전기적 특성 및 신뢰도를 향상시킬 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일 방법에 의해 형성된 게이트전극을 도시한 단면도, 제3A도 내지 3D도는 본 발명의 제1실시예에 의한 게이트전극 형성방법을 설명하기 위해 도시한 단면도들이다. 제4A도 내지 4D도는 본 발명의 제2실시예에 의한 게이트전극 형성방법을 설명하기 위해 거시한 단면도들이다.
Claims (9)
- 반도체기판 상에 형성된 게이트산화막; 상기 게이트산화막 상에 형성된 다결정실리콘막; 상기 다결정실리콘막 상에 형성된 장벽금속층; 및 상기 장벽급속층 상에 형성된 저저항금속층을 포함하는 것을 특징으로 하는 반도체장치의 게이트전극.
- 제1항에 있어서, 상기 장벽금속층은 WSi2,TaSi2및 MoSi2등의 고융점 실리사이드와 WN, TiN, TaN,MoN등의 고융점 나이트라인으로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극.
- 제1항에 있어서, 상기 장벽금속층은 TiTs2, TaSi2, CoSi2및 MoSi2등의로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극.
- 반도체기판 상에 게이트산화막을 형성하는 제1공정; 상기 게이트산화막 상에 제1다결정실리콘막을 형성하는 제2공정; 상기 제1다결정실리콘막 상에 장벽금속층을 형성하는 제3공정; 상기 장벽금속층 상에 제2다결정실리콘막을 형성하는 제4공정; 상기 제3다결정실리콘막층 상에 실리사이드화 물질을 형성하는 제5공정; 결과물을 열처리하여 상기 실리사이드화 물질과 제2다결정실리콘막을 반응시킴으로서 저저항금속층을 형성하는 제6공정; 및 후속 열처리하는 제7공정을 포함하는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
- 제4항에 있어서, 상기 장벽금속층은 상기 저저항금속층을 구성하는 입자가 제1다결정실리톰막으로 확산되지 않도록하는 물질을 사용하여 형성되는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
- 제5항에 있어서, 상기 물질은 Wsix,TaSi2및 MoSi2등의 고융점 실리사리드와, WN, TiN, TaN,MoN등의 고융점 나이트라인으로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
- 제6항에 있어서, 상기 WSix는 WF6을 SiH나 SiHCI2등과 반응시켜 형성하는것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
- 제4항에 있어서, 상기 실리사이드화 물질은 TI, Co, Ta 및 Mo등으로 이루어진 군에서 선택된 하나인 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
- 제4항에 있어서, 상기 제4공정 이후에, 적층된 물질들을 패터닝하여 게이트전극의패턴을 형성하는 공정 및 상기 패턴 측벽에 절연물질로 된 측벽스페이서를 형성하는 공정을 더 포함하는 는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038281A KR0161380B1 (ko) | 1994-12-28 | 1994-12-28 | 반도체장치의 트랜지스터 및 그 제조방법 |
JP7339693A JPH08236769A (ja) | 1994-12-28 | 1995-12-26 | 半導体素子のゲ−ト電極及びその製造方法 |
US08/953,644 US5852319A (en) | 1994-12-28 | 1997-10-17 | Gate electrode for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038281A KR0161380B1 (ko) | 1994-12-28 | 1994-12-28 | 반도체장치의 트랜지스터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960026953A true KR960026953A (ko) | 1996-07-22 |
KR0161380B1 KR0161380B1 (ko) | 1998-12-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940038281A KR0161380B1 (ko) | 1994-12-28 | 1994-12-28 | 반도체장치의 트랜지스터 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5852319A (ko) |
JP (1) | JPH08236769A (ko) |
KR (1) | KR0161380B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100443352B1 (ko) * | 1996-12-30 | 2004-10-14 | 주식회사 하이닉스반도체 | 반도체장치의실리사이드막형성방법 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100234378B1 (ko) * | 1997-05-20 | 1999-12-15 | 윤종용 | 실리사이드를 이용한 스위칭 소자 및 그 제조방법 |
US5854115A (en) * | 1997-11-26 | 1998-12-29 | Advanced Micro Devices, Inc. | Formation of an etch stop layer within a transistor gate conductor to provide for reduction of channel length |
JPH11220112A (ja) * | 1998-01-30 | 1999-08-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6291868B1 (en) | 1998-02-26 | 2001-09-18 | Micron Technology, Inc. | Forming a conductive structure in a semiconductor device |
US5998847A (en) * | 1998-08-11 | 1999-12-07 | International Business Machines Corporation | Low voltage active body semiconductor device |
US7282443B2 (en) * | 2003-06-26 | 2007-10-16 | Micron Technology, Inc. | Methods of forming metal silicide |
US7348265B2 (en) * | 2004-03-01 | 2008-03-25 | Texas Instruments Incorporated | Semiconductor device having a silicided gate electrode and method of manufacture therefor |
KR100553714B1 (ko) * | 2004-07-14 | 2006-02-24 | 삼성전자주식회사 | 자기정렬 실리사이드층을 가지는 반도체 소자 및 그제조방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230077A1 (de) * | 1982-08-12 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte bipolar- und mos-transistoren enthaltende halbleiterschaltung auf einem chip und verfahren zu ihrer herstellung |
JPS61166075A (ja) * | 1985-01-17 | 1986-07-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPS63284857A (ja) * | 1987-05-18 | 1988-11-22 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2753301B2 (ja) * | 1989-01-20 | 1998-05-20 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2695014B2 (ja) * | 1989-09-06 | 1997-12-24 | 株式会社東芝 | Mos型半導体装置 |
US5341016A (en) * | 1993-06-16 | 1994-08-23 | Micron Semiconductor, Inc. | Low resistance device element and interconnection structure |
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1994
- 1994-12-28 KR KR1019940038281A patent/KR0161380B1/ko not_active IP Right Cessation
-
1995
- 1995-12-26 JP JP7339693A patent/JPH08236769A/ja active Pending
-
1997
- 1997-10-17 US US08/953,644 patent/US5852319A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100443352B1 (ko) * | 1996-12-30 | 2004-10-14 | 주식회사 하이닉스반도체 | 반도체장치의실리사이드막형성방법 |
Also Published As
Publication number | Publication date |
---|---|
US5852319A (en) | 1998-12-22 |
KR0161380B1 (ko) | 1998-12-01 |
JPH08236769A (ja) | 1996-09-13 |
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