KR960026410A - 집적회로 및 그의 제조방법 - Google Patents

집적회로 및 그의 제조방법 Download PDF

Info

Publication number
KR960026410A
KR960026410A KR1019950060927A KR19950060927A KR960026410A KR 960026410 A KR960026410 A KR 960026410A KR 1019950060927 A KR1019950060927 A KR 1019950060927A KR 19950060927 A KR19950060927 A KR 19950060927A KR 960026410 A KR960026410 A KR 960026410A
Authority
KR
South Korea
Prior art keywords
sublayer
layer
alloy
integrated circuit
sublayers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950060927A
Other languages
English (en)
Korean (ko)
Inventor
앤 볼링거 셰릴
알란 다인 에드워드
만산 머천트 세일레쉬
쿠마르 난다 아런
쿠마르 로이 프래딥
월터 윌킨스 2세 클레터스
Original Assignee
디. 엠. 시그몬드
에이티앤드티 아이피엠 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디. 엠. 시그몬드, 에이티앤드티 아이피엠 코포레이션 filed Critical 디. 엠. 시그몬드
Publication of KR960026410A publication Critical patent/KR960026410A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019950060927A 1994-12-29 1995-12-28 집적회로 및 그의 제조방법 Withdrawn KR960026410A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/365,652 US5561083A (en) 1994-12-29 1994-12-29 Method of making multilayered Al-alloy structure for metal conductors
US08/365,652 1994-12-29

Publications (1)

Publication Number Publication Date
KR960026410A true KR960026410A (ko) 1996-07-22

Family

ID=23439761

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950060927A Withdrawn KR960026410A (ko) 1994-12-29 1995-12-28 집적회로 및 그의 제조방법

Country Status (6)

Country Link
US (2) US5561083A (https=)
EP (1) EP0720231A3 (https=)
JP (1) JP3296708B2 (https=)
KR (1) KR960026410A (https=)
SG (1) SG34348A1 (https=)
TW (1) TW298675B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190001445U (ko) 2017-12-08 2019-06-18 최재양 삽입식 샤워기 홀더

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
JP3744980B2 (ja) * 1995-07-27 2006-02-15 株式会社半導体エネルギー研究所 半導体装置
SG55246A1 (en) * 1995-12-29 1998-12-21 Ibm Aluminum alloy for the damascene process for on-chip wiring applications
US5663108A (en) * 1996-06-13 1997-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Optimized metal pillar via process
JPH1027797A (ja) * 1996-07-10 1998-01-27 Oki Electric Ind Co Ltd Ａｌ／Ｔｉ積層配線およびその形成方法
KR100415095B1 (ko) * 1996-11-27 2004-03-31 주식회사 하이닉스반도체 반도체소자의제조방법
US5943601A (en) * 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
DE19734434C1 (de) * 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JP3500308B2 (ja) 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路
US6255688B1 (en) * 1997-11-21 2001-07-03 Agere Systems Guardian Corp. Capacitor having aluminum alloy bottom plate
US6380627B1 (en) * 1998-06-26 2002-04-30 The Regents Of The University Of California Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication
US6100195A (en) 1998-12-28 2000-08-08 Chartered Semiconductor Manu. Ltd. Passivation of copper interconnect surfaces with a passivating metal layer
US6320265B1 (en) * 1999-04-12 2001-11-20 Lucent Technologies Inc. Semiconductor device with high-temperature ohmic contact and method of forming the same
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
US7628309B1 (en) * 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
DE102016101801B4 (de) * 2016-02-02 2021-01-14 Infineon Technologies Ag Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132056A (en) * 1979-04-03 1980-10-14 Toshiba Corp Semiconductor device
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
US4517225A (en) * 1983-05-02 1985-05-14 Signetics Corporation Method for manufacturing an electrical interconnection by selective tungsten deposition
US4673623A (en) * 1985-05-06 1987-06-16 The Board Of Trustees Of The Leland Stanford Junior University Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
US4910580A (en) * 1987-08-27 1990-03-20 Siemens Aktiengesellschaft Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy
US4987562A (en) * 1987-08-28 1991-01-22 Fujitsu Limited Semiconductor layer structure having an aluminum-silicon alloy layer
JPH01185948A (ja) * 1988-01-21 1989-07-25 Seiko Epson Corp 半導体装置
KR920005701B1 (ko) * 1989-07-20 1992-07-13 현대전자산업 주식회사 반도체 집적회로 내의 소자 연결용 금속배선층 및 그 제조방법
JPH04363024A (ja) * 1990-11-30 1992-12-15 Toshiba Corp 半導体装置の製造方法
US5345108A (en) * 1991-02-26 1994-09-06 Nec Corporation Semiconductor device having multi-layer electrode wiring
DE4200809C2 (de) * 1991-03-20 1996-12-12 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement
KR940004256B1 (en) * 1991-04-09 1994-05-19 Samsung Electronics Co Ltd Making method of semiconductor device
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
FR2678818B1 (fr) * 1991-07-11 1995-07-13 Olivier Ets Georges Dispositif arrache-fils pour semelle de suceur d'aspirateur.
KR960010056B1 (ko) * 1992-12-10 1996-07-25 삼성전자 주식회사 반도체장치 및 그 제조 방법
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
US5360995A (en) * 1993-09-14 1994-11-01 Texas Instruments Incorporated Buffered capped interconnect for a semiconductor device
US5444022A (en) * 1993-12-29 1995-08-22 Intel Corporation Method of fabricating an interconnection structure for an integrated circuit
US5523259A (en) * 1994-12-05 1996-06-04 At&T Corp. Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190001445U (ko) 2017-12-08 2019-06-18 최재양 삽입식 샤워기 홀더

Also Published As

Publication number Publication date
EP0720231A3 (en) 1996-12-11
JPH08236707A (ja) 1996-09-13
SG34348A1 (en) 1996-12-06
JP3296708B2 (ja) 2002-07-02
US5561083A (en) 1996-10-01
US5641994A (en) 1997-06-24
TW298675B (https=) 1997-02-21
EP0720231A2 (en) 1996-07-03

Similar Documents

Publication Publication Date Title
KR960026410A (ko) 집적회로 및 그의 제조방법
JPS6419763A (en) Improved integrated circuit structure and method of forming improved integrated circuit structure
KR900002455A (ko) 반도체 집적 소자 제조방법
KR900017172A (ko) 집적회로의 상호 접속배치 제조방법
KR890007386A (ko) 반도체 장치 및 그 제조방법
KR920020620A (ko) 반도체 집적회로장치의 배선접속구조 및 그 제조방법
KR950025957A (ko) 적층 구조의 배선을 갖고 있는 반도체 디바이스 및 그 제조방법
US4319264A (en) Nickel-gold-nickel conductors for solid state devices
EP0304728A3 (de) Verfahren zum Herstellen einer aus Aluminium oder einer Aluminium-Legierung bestehenden niederohmigen planen Metallisierung
KR920017184A (ko) 반도체 장치의 제조방법
WO2002054484A3 (en) Metal ion diffusion barrier layers
EP1187191A3 (de) SOI-Substrat sowie darin ausgebildete Halbleiterschaltung und dazugehörige Herstellungsverfahren
JPH11312704A5 (https=)
US5953628A (en) Method for forming wiring for a semiconductor device
KR890005845A (ko) 배리어층을 가지고 있는 알루미늄 합금 반도체 장치 및 그 제조방법
KR910021189A (ko) 전기회로 또는 전자회로의 성형에 사용되는 세라믹기판
KR970053550A (ko) 이층 구조의 Cu 확산방지막 형성방법
JPH0378258A (ja) 半導体デバイス用金属被覆及びその製造方法
JPH09186238A (ja) 導電構造およびその形成
JPH0418760A (ja) 半導体装置
KR910019176A (ko) 감소된 부식 가능성을 갖는 금속화 시스템 및 이에 의한 반도체 집적회로의 제조방법
JPS6445163A (en) Semiconductor device
JPH0341732A (ja) 半導体装置の製造方法
KR970008418A (ko) 에칭으로부터 비아 홀을 보호하기 위한 보호층을 포함하는 반도체 장치
KR940016636A (ko) 다층 금속 배선의 본딩 패드 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000