JPS6445163A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6445163A JPS6445163A JP20189087A JP20189087A JPS6445163A JP S6445163 A JPS6445163 A JP S6445163A JP 20189087 A JP20189087 A JP 20189087A JP 20189087 A JP20189087 A JP 20189087A JP S6445163 A JPS6445163 A JP S6445163A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicide
- contained
- wiring film
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce migration by a method wherein a silicon LSI is formed by junctioning specific two-layer structured electrode wiring films with a diffused layer on a silicon substrate through the intermediary of a contact hole. CONSTITUTION:An SiLSI wiring is provided with an Si-rich silicide i.e., at least two layer structured electrode wiring films comprising a high melting point metallic silicide as the first layer wiring film 4 in composition ratio represented by TiSix, MoSix, CcSix, WSix and TaSix wherein x>2.0 and an Al-Si layer as the second layer wiring film 5 contains Si exceeding 0.1%. Consequently, any surplus Si contained in the silicide occupies a stable position in the grain field to prevent the Al migration from occurring along the grain field. Furthermore, when Si is contained in Al, the Si-rich silicide is hardly spiked also when 0.1% or more of Si is contained in Al as the second layer wiring film 5, such an Si spiking as Al migrating from the silicide layer to an si substrate can be restrained from occurring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20189087A JPS6445163A (en) | 1987-08-14 | 1987-08-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20189087A JPS6445163A (en) | 1987-08-14 | 1987-08-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6445163A true JPS6445163A (en) | 1989-02-17 |
Family
ID=16448526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20189087A Pending JPS6445163A (en) | 1987-08-14 | 1987-08-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445163A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148259A (en) * | 1986-08-19 | 1992-09-15 | Fujitsu Limited | Semiconductor device having thin film wiring layer of aluminum containing carbon |
| JPH05190549A (en) * | 1991-07-08 | 1993-07-30 | Samsung Electron Co Ltd | Semiconductor device and manufacture thereof |
| JPH11224863A (en) * | 1998-02-04 | 1999-08-17 | Nec Corp | Semiconductor device and its manufacture |
| CN1070460C (en) * | 1994-05-26 | 2001-09-05 | 赫罗伊斯石英玻璃有限公司 | Method and apparatus for making quartz glass plate |
-
1987
- 1987-08-14 JP JP20189087A patent/JPS6445163A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148259A (en) * | 1986-08-19 | 1992-09-15 | Fujitsu Limited | Semiconductor device having thin film wiring layer of aluminum containing carbon |
| JPH05190549A (en) * | 1991-07-08 | 1993-07-30 | Samsung Electron Co Ltd | Semiconductor device and manufacture thereof |
| CN1070460C (en) * | 1994-05-26 | 2001-09-05 | 赫罗伊斯石英玻璃有限公司 | Method and apparatus for making quartz glass plate |
| JPH11224863A (en) * | 1998-02-04 | 1999-08-17 | Nec Corp | Semiconductor device and its manufacture |
| US6288430B1 (en) | 1998-02-04 | 2001-09-11 | Nec Corporation | Semiconductor device having silicide layer with siliconrich region and method for making the same |
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