KR960025708A - 챠지 펌프회로의 출력전압 조절회로 - Google Patents

챠지 펌프회로의 출력전압 조절회로 Download PDF

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Publication number
KR960025708A
KR960025708A KR1019940038585A KR19940038585A KR960025708A KR 960025708 A KR960025708 A KR 960025708A KR 1019940038585 A KR1019940038585 A KR 1019940038585A KR 19940038585 A KR19940038585 A KR 19940038585A KR 960025708 A KR960025708 A KR 960025708A
Authority
KR
South Korea
Prior art keywords
charge pump
circuit
pump circuit
output voltage
multilevel
Prior art date
Application number
KR1019940038585A
Other languages
English (en)
Other versions
KR0137437B1 (ko
Inventor
김대현
신윤섭
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940038585A priority Critical patent/KR0137437B1/ko
Priority to GB9526283A priority patent/GB2296606B/en
Priority to US08/576,052 priority patent/US5670908A/en
Publication of KR960025708A publication Critical patent/KR960025708A/ko
Application granted granted Critical
Publication of KR0137437B1 publication Critical patent/KR0137437B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)

Abstract

본 발명은 챠지 펌프회로의 출력전압 조절회로에 관한 것으로서, N-웰을 닯은 P+-웰 바이어스(Bias) 전압에 의한 P-N 정션 브레이크다운(P-N Junction Breakdown)전압을 이용하여 챠지 펌프회로의 출력을 다수의 전압 레벨로 출력되도록 하므로써 칩 면적을 줄이도록 한 회로에 관한 것이다.

Description

챠지 펌프회로의 출력전압 조절회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 포지티브 챠지 펌프회로의 출력전압 조절회로도.

Claims (2)

  1. 컴맨드 신호를 입력으로 하는 챠지 펌프회로 및 멀티레벨 셀렉션 디코더와, 상기 멀티레벨 디코더 신호에 따라 선택적으로 동작되며 상기 챠지 펌프회로의 출력단자 및 전원단자간에 병렬로 접속되는 제1스테이지 회로와, 상기 멀티레벨 디코더 신호에 따라 선택적으로 동작되며 상기 챠지 펌프회로의 출력단자 및 전원단자간에 병렬로 접속되는 제2스테이지 회로와, 상기 멀티레벨 디코더 신호에 따라 선택적으로 동작되며 상기 챠지 펌프회로의 출력단자 및 전원단자간에 병렬로 접속되는 제3스테이지 회로가 챠지 펌프회로의 출력전압을 상승시키도록 구성된 것을 특징으로 하는 챠지 펌프회로의 출력 전압조절회로.
  2. 제1항에 있어서, 상기 멀티레벨 셀렉션 디코더는 컴맨드 신호를 입력으로 하며 상기 입력되는 컴맨드 신호에 따라 제1 내지 제3스테이지 회로를 선택적으로 동작시키도록 구성되는 것을 특징으로 하는 챠지 펌프회로의 출력 전압 조절회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940038585A 1994-12-29 1994-12-29 챠지 펌프회로의 출력전압 조절회로 KR0137437B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940038585A KR0137437B1 (ko) 1994-12-29 1994-12-29 챠지 펌프회로의 출력전압 조절회로
GB9526283A GB2296606B (en) 1994-12-29 1995-12-21 Circuit for controlling output voltage from charge pump
US08/576,052 US5670908A (en) 1994-12-29 1995-12-21 Circuit for controlling output voltage from charge pump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038585A KR0137437B1 (ko) 1994-12-29 1994-12-29 챠지 펌프회로의 출력전압 조절회로

Publications (2)

Publication Number Publication Date
KR960025708A true KR960025708A (ko) 1996-07-20
KR0137437B1 KR0137437B1 (ko) 1998-06-01

Family

ID=19404811

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940038585A KR0137437B1 (ko) 1994-12-29 1994-12-29 챠지 펌프회로의 출력전압 조절회로

Country Status (3)

Country Link
US (1) US5670908A (ko)
KR (1) KR0137437B1 (ko)
GB (1) GB2296606B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100455389B1 (ko) * 2001-07-23 2004-11-06 삼성전자주식회사 단일 차아지 펌프를 이용한 듀얼 전압 발생장치, 발생회로및 그 발생방법
KR100514024B1 (ko) * 1996-07-29 2005-12-28 주식회사 하이닉스반도체 반도체기판용전하펌프

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100264959B1 (ko) * 1997-04-30 2000-10-02 윤종용 반도체 장치의 고전압발생회로
US6570807B2 (en) 2001-08-22 2003-05-27 Micron Technology, Inc. Intermediate boosted array voltage
JP4368223B2 (ja) * 2003-03-26 2009-11-18 三洋電機株式会社 バイアス電圧生成回路および増幅回路
CN108880233B (zh) * 2018-08-03 2023-10-24 上海艾为电子技术股份有限公司 一种电荷泵电路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585954A (en) * 1983-07-08 1986-04-29 Texas Instruments Incorporated Substrate bias generator for dynamic RAM having variable pump current level
US4654542A (en) * 1985-07-01 1987-03-31 Gte Laboratories Incorporated Staircase ramp voltage generating apparatus with energy reuse
US4706010A (en) * 1986-09-10 1987-11-10 Rca Corporation Linear solar array voltage control system
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
JP3170038B2 (ja) * 1992-05-19 2001-05-28 株式会社東芝 不揮発性半導体記憶装置
KR950006067Y1 (ko) * 1992-10-08 1995-07-27 문정환 반도체 메모리 장치
US5303190A (en) * 1992-10-27 1994-04-12 Motorola, Inc. Static random access memory resistant to soft error
JPH06195971A (ja) * 1992-10-29 1994-07-15 Mitsubishi Electric Corp 基板電位発生回路
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
KR0130040B1 (ko) * 1993-11-09 1998-10-01 김광호 반도체 집적회로의 전압 승압회로
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
JP3148070B2 (ja) * 1994-03-29 2001-03-19 株式会社東芝 電圧変換回路
KR0145758B1 (ko) * 1994-08-24 1998-08-01 김주용 반도체 소자의 전압 조정 회로

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100514024B1 (ko) * 1996-07-29 2005-12-28 주식회사 하이닉스반도체 반도체기판용전하펌프
KR100455389B1 (ko) * 2001-07-23 2004-11-06 삼성전자주식회사 단일 차아지 펌프를 이용한 듀얼 전압 발생장치, 발생회로및 그 발생방법

Also Published As

Publication number Publication date
GB9526283D0 (en) 1996-02-21
KR0137437B1 (ko) 1998-06-01
US5670908A (en) 1997-09-23
GB2296606B (en) 1998-09-23
GB2296606A (en) 1996-07-03

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