KR960012546A - 전압 혼용 인터페이스 및 멀티 레일의 분리된 파워 격자 응용을 위한 정전기 방전 보호 회로 - Google Patents

전압 혼용 인터페이스 및 멀티 레일의 분리된 파워 격자 응용을 위한 정전기 방전 보호 회로 Download PDF

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Publication number
KR960012546A
KR960012546A KR1019950031591A KR19950031591A KR960012546A KR 960012546 A KR960012546 A KR 960012546A KR 1019950031591 A KR1019950031591 A KR 1019950031591A KR 19950031591 A KR19950031591 A KR 19950031591A KR 960012546 A KR960012546 A KR 960012546A
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KR
South Korea
Prior art keywords
voltage
power grid
electrostatic discharge
discharge protection
separate power
Prior art date
Application number
KR1019950031591A
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English (en)
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KR100192188B1 (ko
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Publication of KR960012546A publication Critical patent/KR960012546A/ko
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Publication of KR100192188B1 publication Critical patent/KR100192188B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019950031591A 1994-09-26 1995-09-25 멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로 KR100192188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31225594A 1994-09-26 1994-09-26
US8/312,255 1994-09-26

Publications (2)

Publication Number Publication Date
KR960012546A true KR960012546A (ko) 1996-04-20
KR100192188B1 KR100192188B1 (ko) 1999-06-15

Family

ID=23210595

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031591A KR100192188B1 (ko) 1994-09-26 1995-09-25 멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로

Country Status (5)

Country Link
US (1) US5945713A (ko)
EP (1) EP0703622A2 (ko)
JP (1) JPH08111508A (ko)
KR (1) KR100192188B1 (ko)
TW (1) TW289153B (ko)

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KR100470994B1 (ko) * 1997-10-06 2005-07-07 삼성전자주식회사 반도체장치의정전기보호장치

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Also Published As

Publication number Publication date
US5945713A (en) 1999-08-31
EP0703622A2 (en) 1996-03-27
KR100192188B1 (ko) 1999-06-15
TW289153B (ko) 1996-10-21
JPH08111508A (ja) 1996-04-30

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