KR960005872A - 반도체 소자의 금속배선 형성방법 - Google Patents

반도체 소자의 금속배선 형성방법 Download PDF

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Publication number
KR960005872A
KR960005872A KR1019940016509A KR19940016509A KR960005872A KR 960005872 A KR960005872 A KR 960005872A KR 1019940016509 A KR1019940016509 A KR 1019940016509A KR 19940016509 A KR19940016509 A KR 19940016509A KR 960005872 A KR960005872 A KR 960005872A
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KR
South Korea
Prior art keywords
film
titanium nitride
forming
semiconductor device
titanium
Prior art date
Application number
KR1019940016509A
Other languages
English (en)
Other versions
KR970007175B1 (ko
Inventor
장현진
문영화
전영호
고재완
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940016509A priority Critical patent/KR970007175B1/ko
Priority to GB9513938A priority patent/GB2291264B/en
Priority to CN95109193A priority patent/CN1062978C/zh
Priority to US08/499,791 priority patent/US5877031A/en
Publication of KR960005872A publication Critical patent/KR960005872A/ko
Application granted granted Critical
Publication of KR970007175B1 publication Critical patent/KR970007175B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본발명은 반도체 소자 제조공정 중 소자간의 전기적 연결을 위한 금속배선 형성방법에 관한 것으로, 질화티타늄막(1)을 원하는 전체 두께의 반정도 형성하는 단계;상기 질화티타늄막(1)상부에 N2O가스로 질화티타늄보다 조밀한 구조를 갖는 티타늄-니트로겐-옥시젠(TiNO,2)막을 장벽금속막의 나머지 두께만큼 형성하는 단계:N2분위기에서 열처리 함으로써 티타늄-니트로젠-옥시젠막 속의 여분의 옥시젠 이온이 질화티타늄막속으로 확산되도록 하는 단계를 포함하여 이루어지는 것을 특징으로 한다.

Description

반도체 소자의 금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 일실시예의 장벽금속막 형성 공정 단면도.

Claims (1)

  1. 장벽금속막을 포함하는 반도체 소자의 금속배선 형성방법에 있어서, 질화티타늄막(1)을 원하는 전체 두께의 반정도 형성하는 단계 ; 상기 질화티타늄막(1) 상부에 N2O 가스로 질화티타늄 보다 조밀한 구조를 갖는 티타늄-니트로젠-옥시젠(TiNO,2)막을 장벽금속막의 나머지 두께만큼 형성하는 단계 ; N2분위기에서 열처리함으로써 티타늄-니트로젠-옥시젠막 속의 여분의 옥시젠 이온이 질화티타늄막 속으로 확산되도록하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940016509A 1994-07-07 1994-07-08 반도체 소자의 금속배선 형성방법 KR970007175B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940016509A KR970007175B1 (ko) 1994-07-08 1994-07-08 반도체 소자의 금속배선 형성방법
GB9513938A GB2291264B (en) 1994-07-07 1995-07-07 Method for forming a metallic barrier layer in semiconductor device and device made by the method
CN95109193A CN1062978C (zh) 1994-07-07 1995-07-07 半导体器件中制作金属阻挡层的方法
US08/499,791 US5877031A (en) 1994-07-07 1995-07-07 Method for forming a metallic barrier layer in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940016509A KR970007175B1 (ko) 1994-07-08 1994-07-08 반도체 소자의 금속배선 형성방법

Publications (2)

Publication Number Publication Date
KR960005872A true KR960005872A (ko) 1996-02-23
KR970007175B1 KR970007175B1 (ko) 1997-05-03

Family

ID=19387645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016509A KR970007175B1 (ko) 1994-07-07 1994-07-08 반도체 소자의 금속배선 형성방법

Country Status (1)

Country Link
KR (1) KR970007175B1 (ko)

Also Published As

Publication number Publication date
KR970007175B1 (ko) 1997-05-03

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