KR960002998A - 반도체 레이저 디바이스 - Google Patents

반도체 레이저 디바이스 Download PDF

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Publication number
KR960002998A
KR960002998A KR1019950015327A KR19950015327A KR960002998A KR 960002998 A KR960002998 A KR 960002998A KR 1019950015327 A KR1019950015327 A KR 1019950015327A KR 19950015327 A KR19950015327 A KR 19950015327A KR 960002998 A KR960002998 A KR 960002998A
Authority
KR
South Korea
Prior art keywords
piece
laser diode
diode chip
inscribed
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019950015327A
Other languages
English (en)
Korean (ko)
Inventor
쇼지 기따무라
사또루 나가노
요이찌 신도
가쯔미 오구리
Original Assignee
이와오 야마구찌
후지 덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이와오 야마구찌, 후지 덴끼 가부시끼가이샤 filed Critical 이와오 야마구찌
Publication of KR960002998A publication Critical patent/KR960002998A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1019950015327A 1994-06-07 1995-06-07 반도체 레이저 디바이스 Abandoned KR960002998A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6124815A JPH07335980A (ja) 1994-06-07 1994-06-07 半導体レーザ装置
JP124815/1994 1994-06-07

Publications (1)

Publication Number Publication Date
KR960002998A true KR960002998A (ko) 1996-01-26

Family

ID=14894806

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950015327A Abandoned KR960002998A (ko) 1994-06-07 1995-06-07 반도체 레이저 디바이스

Country Status (6)

Country Link
US (1) US5614735A (enExample)
EP (1) EP0687042B1 (enExample)
JP (1) JPH07335980A (enExample)
KR (1) KR960002998A (enExample)
DE (1) DE69500600T2 (enExample)
TW (1) TW283270B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0492655A1 (en) * 1990-12-17 1992-07-01 Isuzu Motors Limited Amphibian motor vehicle
EP0646971B1 (de) 1993-09-30 1997-03-12 Siemens Aktiengesellschaft Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
US5808325A (en) * 1996-06-28 1998-09-15 Motorola, Inc. Optical transmitter package assembly including lead frame having exposed flange with key
US5723881A (en) * 1996-12-04 1998-03-03 Quarton Inc. Dual-beam laser diode
JP2907186B2 (ja) * 1997-05-19 1999-06-21 日本電気株式会社 半導体装置、その製造方法
EP1566846B1 (de) 1997-07-29 2016-02-03 OSRAM Opto Semiconductors GmbH Optoelektronisches Bauelement
US6236116B1 (en) * 1998-09-03 2001-05-22 Micron Technology, Inc. Semiconductor device having a built-in heat sink and process of manufacturing same
US6396133B1 (en) * 1998-09-03 2002-05-28 Micron Technology, Inc. Semiconductor device with heat-dissipating lead-frame and process of manufacturing same
EP1160881A1 (en) * 2000-05-27 2001-12-05 Mu-Chin Yu Light emitting diode encapsulation
US7095101B2 (en) * 2000-11-15 2006-08-22 Jiahn-Chang Wu Supporting frame for surface-mount diode package
EP1211735B1 (en) * 2000-12-04 2006-04-26 Mu-Chin Yu Light emitting diode with improved heat dissipation
JP3735033B2 (ja) * 2000-12-07 2006-01-11 シャープ株式会社 半導体レーザ装置
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector
JP4262937B2 (ja) * 2001-07-26 2009-05-13 シャープ株式会社 半導体レーザ装置
JP2003133627A (ja) * 2001-10-19 2003-05-09 Sharp Corp 半導体レーザ装置
JP3987716B2 (ja) 2001-12-10 2007-10-10 シャープ株式会社 半導体レーザ装置およびその製造方法
WO2003081735A1 (fr) * 2002-03-25 2003-10-02 Sanyo Electric Co., Ltd. Dispositif a faisceau laser a semi-conducteurs
JP3947495B2 (ja) * 2003-06-02 2007-07-18 ローム株式会社 モールド型半導体レーザ
JP4031748B2 (ja) * 2003-10-06 2008-01-09 ローム株式会社 半導体レーザ
JP3909853B2 (ja) * 2004-04-26 2007-04-25 株式会社東芝 半導体レーザ装置及び半導体レーザ組立体
US7705365B2 (en) * 2006-01-24 2010-04-27 Denso Corporation Lighting device and light emitting module for the same
JP4970924B2 (ja) 2006-03-28 2012-07-11 三菱電機株式会社 光素子用パッケージとこれを用いた光半導体装置
US20080303127A1 (en) 2007-06-05 2008-12-11 Mitsubishi Electric Corporation Cap-less package and manufacturing method thereof
US8492179B2 (en) * 2008-07-11 2013-07-23 Koninklijke Philips N.V. Method of mounting a LED module to a heat sink
US8089075B2 (en) * 2009-04-17 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LFCC package with a reflector cup surrounded by a single encapsulant
US8101955B2 (en) * 2009-04-17 2012-01-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC package with a reflector cup surrounded by an encapsulant
DE102016101942B4 (de) * 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157486A (en) * 1977-12-19 1979-06-05 Western Electric Company, Inc. Electroluminescent display and circuit protective device and method of making
JPH02125687A (ja) * 1988-11-04 1990-05-14 Sony Corp 半導体レーザ装置
US5270555A (en) * 1989-05-18 1993-12-14 Murata Manufacturing Co., Ltd. Pyroelectric IR-sensor with a molded inter connection device substrate having a low thermal conductivity coefficient
JPH07170019A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体レーザ装置
EP0484887B1 (en) * 1990-11-07 1996-04-03 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
TW253996B (enExample) * 1992-04-07 1995-08-11 Fuji Electric Co Ltd
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
DE4311530A1 (de) * 1992-10-02 1994-04-07 Telefunken Microelectron Optoelektronisches Bauelement mit engem Öffnungswinkel

Also Published As

Publication number Publication date
JPH07335980A (ja) 1995-12-22
DE69500600D1 (de) 1997-10-02
EP0687042B1 (en) 1997-08-27
TW283270B (enExample) 1996-08-11
EP0687042A1 (en) 1995-12-13
DE69500600T2 (de) 1998-04-09
US5614735A (en) 1997-03-25

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St.27 status event code: A-0-1-A10-A12-nap-PA0109

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St.27 status event code: A-3-3-R10-R18-oth-X000

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PC1904 Unpaid initial registration fee

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