JPH07335980A - 半導体レーザ装置 - Google Patents

半導体レーザ装置

Info

Publication number
JPH07335980A
JPH07335980A JP6124815A JP12481594A JPH07335980A JP H07335980 A JPH07335980 A JP H07335980A JP 6124815 A JP6124815 A JP 6124815A JP 12481594 A JP12481594 A JP 12481594A JP H07335980 A JPH07335980 A JP H07335980A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
resin
light emitting
emitting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6124815A
Other languages
English (en)
Japanese (ja)
Inventor
Shoji Kitamura
祥司 北村
Satoru Nagano
悟 永野
Yoichi Shindo
洋一 進藤
Katsumi Oguri
克実 大栗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6124815A priority Critical patent/JPH07335980A/ja
Priority to US08/463,070 priority patent/US5614735A/en
Priority to EP95108675A priority patent/EP0687042B1/en
Priority to DE69500600T priority patent/DE69500600T2/de
Priority to KR1019950015327A priority patent/KR960002998A/ko
Priority to TW084106296A priority patent/TW283270B/zh
Publication of JPH07335980A publication Critical patent/JPH07335980A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP6124815A 1994-06-07 1994-06-07 半導体レーザ装置 Pending JPH07335980A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP6124815A JPH07335980A (ja) 1994-06-07 1994-06-07 半導体レーザ装置
US08/463,070 US5614735A (en) 1994-06-07 1995-06-05 Semiconductor laser device
EP95108675A EP0687042B1 (en) 1994-06-07 1995-06-06 Semiconductor laser device
DE69500600T DE69500600T2 (de) 1994-06-07 1995-06-06 Halbleiterlaservorrichtung
KR1019950015327A KR960002998A (ko) 1994-06-07 1995-06-07 반도체 레이저 디바이스
TW084106296A TW283270B (enExample) 1994-06-07 1995-06-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6124815A JPH07335980A (ja) 1994-06-07 1994-06-07 半導体レーザ装置

Publications (1)

Publication Number Publication Date
JPH07335980A true JPH07335980A (ja) 1995-12-22

Family

ID=14894806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6124815A Pending JPH07335980A (ja) 1994-06-07 1994-06-07 半導体レーザ装置

Country Status (6)

Country Link
US (1) US5614735A (enExample)
EP (1) EP0687042B1 (enExample)
JP (1) JPH07335980A (enExample)
KR (1) KR960002998A (enExample)
DE (1) DE69500600T2 (enExample)
TW (1) TW283270B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6816522B2 (en) 2001-12-10 2004-11-09 Sharp Kabushiki Kaisha Semiconductor laser apparatus and method for manufacturing the same
US7005311B2 (en) 1993-09-30 2006-02-28 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102215B2 (en) 1997-07-29 2006-09-05 Osram Gmbh Surface-mountable light-emitting diode structural element
DE102008026764A1 (de) 2007-06-05 2008-12-11 Mitsubishi Electric Corp. Deckelloses Gehäuse und Herstellungsverfahren desselben
US7622750B2 (en) 2006-03-28 2009-11-24 Mitsubishi Electric Corporation Optical device package and optical semiconductor device using the same

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0492655A1 (en) * 1990-12-17 1992-07-01 Isuzu Motors Limited Amphibian motor vehicle
US5808325A (en) * 1996-06-28 1998-09-15 Motorola, Inc. Optical transmitter package assembly including lead frame having exposed flange with key
US5723881A (en) * 1996-12-04 1998-03-03 Quarton Inc. Dual-beam laser diode
JP2907186B2 (ja) * 1997-05-19 1999-06-21 日本電気株式会社 半導体装置、その製造方法
US6236116B1 (en) * 1998-09-03 2001-05-22 Micron Technology, Inc. Semiconductor device having a built-in heat sink and process of manufacturing same
US6396133B1 (en) * 1998-09-03 2002-05-28 Micron Technology, Inc. Semiconductor device with heat-dissipating lead-frame and process of manufacturing same
EP1160881A1 (en) * 2000-05-27 2001-12-05 Mu-Chin Yu Light emitting diode encapsulation
US7095101B2 (en) * 2000-11-15 2006-08-22 Jiahn-Chang Wu Supporting frame for surface-mount diode package
EP1211735B1 (en) * 2000-12-04 2006-04-26 Mu-Chin Yu Light emitting diode with improved heat dissipation
JP3735033B2 (ja) * 2000-12-07 2006-01-11 シャープ株式会社 半導体レーザ装置
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector
JP4262937B2 (ja) * 2001-07-26 2009-05-13 シャープ株式会社 半導体レーザ装置
JP2003133627A (ja) * 2001-10-19 2003-05-09 Sharp Corp 半導体レーザ装置
WO2003081735A1 (fr) * 2002-03-25 2003-10-02 Sanyo Electric Co., Ltd. Dispositif a faisceau laser a semi-conducteurs
JP3947495B2 (ja) * 2003-06-02 2007-07-18 ローム株式会社 モールド型半導体レーザ
JP4031748B2 (ja) * 2003-10-06 2008-01-09 ローム株式会社 半導体レーザ
JP3909853B2 (ja) * 2004-04-26 2007-04-25 株式会社東芝 半導体レーザ装置及び半導体レーザ組立体
US7705365B2 (en) * 2006-01-24 2010-04-27 Denso Corporation Lighting device and light emitting module for the same
US8492179B2 (en) * 2008-07-11 2013-07-23 Koninklijke Philips N.V. Method of mounting a LED module to a heat sink
US8089075B2 (en) * 2009-04-17 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LFCC package with a reflector cup surrounded by a single encapsulant
US8101955B2 (en) * 2009-04-17 2012-01-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC package with a reflector cup surrounded by an encapsulant
DE102016101942B4 (de) * 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157486A (en) * 1977-12-19 1979-06-05 Western Electric Company, Inc. Electroluminescent display and circuit protective device and method of making
JPH02125687A (ja) * 1988-11-04 1990-05-14 Sony Corp 半導体レーザ装置
US5270555A (en) * 1989-05-18 1993-12-14 Murata Manufacturing Co., Ltd. Pyroelectric IR-sensor with a molded inter connection device substrate having a low thermal conductivity coefficient
JPH07170019A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体レーザ装置
EP0484887B1 (en) * 1990-11-07 1996-04-03 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
TW253996B (enExample) * 1992-04-07 1995-08-11 Fuji Electric Co Ltd
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
DE4311530A1 (de) * 1992-10-02 1994-04-07 Telefunken Microelectron Optoelektronisches Bauelement mit engem Öffnungswinkel

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7005311B2 (en) 1993-09-30 2006-02-28 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102212B2 (en) 1993-09-30 2006-09-05 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7288831B2 (en) 1993-09-30 2007-10-30 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102215B2 (en) 1997-07-29 2006-09-05 Osram Gmbh Surface-mountable light-emitting diode structural element
US7183632B2 (en) 1997-07-29 2007-02-27 Osram Gmbh Surface-mountable light-emitting diode structural element
US7508002B2 (en) 1997-07-29 2009-03-24 Osram Gmbh Surface-mountable light-emitting diode structural element
US6816522B2 (en) 2001-12-10 2004-11-09 Sharp Kabushiki Kaisha Semiconductor laser apparatus and method for manufacturing the same
US7622750B2 (en) 2006-03-28 2009-11-24 Mitsubishi Electric Corporation Optical device package and optical semiconductor device using the same
US7875901B2 (en) 2006-03-28 2011-01-25 Mitsubishi Electric Corporation Optical device package and optical semiconductor device using the same
DE102008026764A1 (de) 2007-06-05 2008-12-11 Mitsubishi Electric Corp. Deckelloses Gehäuse und Herstellungsverfahren desselben

Also Published As

Publication number Publication date
DE69500600D1 (de) 1997-10-02
EP0687042B1 (en) 1997-08-27
KR960002998A (ko) 1996-01-26
TW283270B (enExample) 1996-08-11
EP0687042A1 (en) 1995-12-13
DE69500600T2 (de) 1998-04-09
US5614735A (en) 1997-03-25

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