KR960002573A - 반도체소자의 금속배선 제조방법 - Google Patents

반도체소자의 금속배선 제조방법 Download PDF

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Publication number
KR960002573A
KR960002573A KR1019940014568A KR19940014568A KR960002573A KR 960002573 A KR960002573 A KR 960002573A KR 1019940014568 A KR1019940014568 A KR 1019940014568A KR 19940014568 A KR19940014568 A KR 19940014568A KR 960002573 A KR960002573 A KR 960002573A
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KR
South Korea
Prior art keywords
metal layer
forming
metal wiring
etching
semiconductor device
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Application number
KR1019940014568A
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English (en)
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KR0131719B1 (ko
Inventor
하재희
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김주용
현대전자산업 주식회사
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Priority to KR1019940014568A priority Critical patent/KR0131719B1/ko
Publication of KR960002573A publication Critical patent/KR960002573A/ko
Application granted granted Critical
Publication of KR0131719B1 publication Critical patent/KR0131719B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 금속배선 제조방법에 관한 것으로서, 장벽금속층과 금속층 패턴으로 구성되는 금속배선 식각 공정에서 하드 마스크를 식각마스크로 사용하고, 염소 식각 플라스마내에 CO 가스를 혼합하여 상기의 CO 성분들이 플라스마내에서 부산물을 형성하고 상기의 부산물이 금속층 및 장벽금속층의 측벽에 결합하여 보호막이 되어 언더컷을 방지하였으므로 식각 공정의 재현성이 우수하고 공정수율이 향상된다.

Description

반도체소자의 금속배선 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 및 제2b도는 본발명에 따른 반도체소자의 금속배선 제조공정도.

Claims (4)

  1. 소정 구조의 반도체기판상에 절연막을 형성하는 공정과, 상기 절연막상에 장벽금속층을 형성하는 공정과, 상기 장벽금속층상에 금속층을 형성하는 공정과, 상기 금속층상에 아크질화막을 형성하는 공정과, 상기 금속층에서 금속배선으로 예정되어 있는 부분의 아크질화막상에 상기 금속층과는 식각선택비차가 있는 물질로 하드 마스크 패턴을 형성하는 공정과, 상기 하드 마스크 패턴에 의해 노출되어 있는 아크질화막에서 장벽금속층까지 순차적으로 식각하여 금속배선을 형성하되 염소를 포함하는 식각가스에 CO 가스를 첨가하여 식각 진행시 탄소에 의해 금속배선의 측벽에 부산물들이 형성되도록 하는 공정을 구비하는 반도체소자의 금속배선 제조방법.
  2. 제1항에 있어서, 상기 장벽금속층이 TiN이나 Ti로 형성되어 있는 것을 특징으로하는 반도체소자의 금속배선 제조방법.
  3. 제1항에 있어서, 상기 금속층이 알루미늄이나 텅스텐으로 형성되어 있는 것을 특징으로하는 반도체소자의 금속배선 제조방법.
  4. 제1항에 있어서, 상기 하드 마스크가 산화막이나 TiN으로 형성되는 것을 특징으로 하는 반도체소자의 금속배선 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940014568A 1994-06-24 1994-06-24 반도체소자의 금속배선 제조방법 KR0131719B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014568A KR0131719B1 (ko) 1994-06-24 1994-06-24 반도체소자의 금속배선 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014568A KR0131719B1 (ko) 1994-06-24 1994-06-24 반도체소자의 금속배선 제조방법

Publications (2)

Publication Number Publication Date
KR960002573A true KR960002573A (ko) 1996-01-26
KR0131719B1 KR0131719B1 (ko) 1998-04-14

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Application Number Title Priority Date Filing Date
KR1019940014568A KR0131719B1 (ko) 1994-06-24 1994-06-24 반도체소자의 금속배선 제조방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990075068A (ko) * 1998-03-17 1999-10-05 윤종용 절연막 식각방법 및 이를 이용한 반도체장치 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555484B1 (ko) * 1999-09-03 2006-03-03 삼성전자주식회사 반도체장치의 텅스텐 배선 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990075068A (ko) * 1998-03-17 1999-10-05 윤종용 절연막 식각방법 및 이를 이용한 반도체장치 제조방법

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KR0131719B1 (ko) 1998-04-14

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