KR960001877A - 미세패턴 형성방법 - Google Patents

미세패턴 형성방법 Download PDF

Info

Publication number
KR960001877A
KR960001877A KR1019940013482A KR19940013482A KR960001877A KR 960001877 A KR960001877 A KR 960001877A KR 1019940013482 A KR1019940013482 A KR 1019940013482A KR 19940013482 A KR19940013482 A KR 19940013482A KR 960001877 A KR960001877 A KR 960001877A
Authority
KR
South Korea
Prior art keywords
chemically amplified
amplified resist
film
nitride film
formation method
Prior art date
Application number
KR1019940013482A
Other languages
English (en)
Other versions
KR0137985B1 (ko
Inventor
문승찬
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940013482A priority Critical patent/KR0137985B1/ko
Publication of KR960001877A publication Critical patent/KR960001877A/ko
Application granted granted Critical
Publication of KR0137985B1 publication Critical patent/KR0137985B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체 제조공정의 미세패턴 형성방법에 관한것으로, 화학증폭형 레지스트를 이용하여 질화막, 티타늄 나이트라이드막 또는 BPSG막 상부에 패턴을 형성하고자 할때 질화막, 티타늄 나이트라이드막 또는 BPSG막을 증착한 다음, 산소 플라즈마 처리를 실시한후 화학증폭형 레지스트를 도포하여 패턴의 프로파일을 개선하는 미세패턴 형성방법이다.

Description

미세패턴 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 의해 화학증폭형 레지스트 패턴을 형성한 단면도.
제3도는 질화막을 기판상에 증착한후 본 발명에 의한 플라즈마 처리를 실시한후 질화막 표면에 존재하는 N, O, Si성분을 분석한 그래프도.
제4도는 질화막 증착후 종래기술에 의해 플라즈마 처리를 하지 않은 상태에서 질화막 표면에 존재하는 N, O, Si성분을 도시한 그래프도.

Claims (2)

  1. 기판 상부에 질화막, 티타늄 나이트라이드막 또는 BPSG막을 증착한 다음, 그 상부에 화학증폭형 레지스트를 도포한후, 노광 및 현상공정으로 화학증폭형 레지스트 패턴을 제조하는 방법에 있어서, 질화막, 티타늄 나이트라이드막 또는 BPSG막을 증착한 다음, 산소 플라즈마 처리한후, 그 상부에 화학증폭형 레지스트를 도포한후, 노광 및 현상공정으로 화학증폭형 레지스트 패턴을 형성하는 것을 특징으로 미세패턴 형성방법.
  2. 제1항에 있어서, 상기 플라즈마 처리는 압력이 약 100m torr, 전력이 약 800watt, 산소 플로우비가 약 500sccm의 조건에서 약 10분간 실시하는 것을 특징으로 하는 미세패턴 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013482A 1994-06-15 1994-06-15 미세패턴 형성방법 KR0137985B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013482A KR0137985B1 (ko) 1994-06-15 1994-06-15 미세패턴 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013482A KR0137985B1 (ko) 1994-06-15 1994-06-15 미세패턴 형성방법

Publications (2)

Publication Number Publication Date
KR960001877A true KR960001877A (ko) 1996-01-26
KR0137985B1 KR0137985B1 (ko) 1998-04-28

Family

ID=19385328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013482A KR0137985B1 (ko) 1994-06-15 1994-06-15 미세패턴 형성방법

Country Status (1)

Country Link
KR (1) KR0137985B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030010324A (ko) * 2001-07-26 2003-02-05 삼성전자주식회사 산소 플라즈마 전처리 공정을 구비하는 반도체 소자의제조 방법

Also Published As

Publication number Publication date
KR0137985B1 (ko) 1998-04-28

Similar Documents

Publication Publication Date Title
KR900002450A (ko) 스페이서를 이용한 미세선폭 형성방법
KR960023223A (ko) 실리콘 이동을 감소시키기 위한 질화 금속막의 처리방법
SG99313A1 (en) Process for treating semiconductor substrates
KR960001877A (ko) 미세패턴 형성방법
JPS6213813B2 (ko)
JPH05182904A (ja) パターン形成方法
KR930024106A (ko) 반도체 소자의 콘택형성방법
KR980003884A (ko) 레지스트 패턴 형성방법
KR970052400A (ko) 반도체 장치의 금속막 형성 방법
KR940001378A (ko) 반도체장치의 제조방법
KR920020691A (ko) 완만한 프로화일을 갖는 개구부의 형성방법
KR960039164A (ko) 반도체막 제조방법
KR970008396A (ko) 다중합체(polymer) 제거방법
KR970048996A (ko) 반도체 소자의 미세패턴 형성방법
KR940009768A (ko) 포지티브 레지스트 형성방법
JPS60254750A (ja) 金配線の形成方法
KR960026300A (ko) 미세 패턴 제조방법
KR970052730A (ko) 반도체 장치의 피에스지(psg)막 패턴 형성방법
KR970051880A (ko) 반도체 소자의 포토레지스트 형성 방법
KR970048997A (ko) 반도체소자의 미세패턴 형성방법
SE9401000D0 (sv) Method for producing integrated components
KR910020493A (ko) 레지스트의 이중 도포에 의한 이중 노광방법
JPH0394425A (ja) レジスト除去方法
KR970003660A (ko) 반도체 소자의 금속배선 형성방법
KR970018149A (ko) 반도체장치의 미세패턴 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090121

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee